{"id":416083,"date":"2023-03-10T16:54:07","date_gmt":"2023-03-10T15:54:07","guid":{"rendered":"https:\/\/www.ecinews.fr\/?post_type=white_papers&#038;p=416083"},"modified":"2023-03-10T16:54:07","modified_gmt":"2023-03-10T15:54:07","slug":"optimiser-la-commande-de-grille-des-mosfet-sic","status":"publish","type":"white_papers","link":"https:\/\/www.ecinews.fr\/fr\/white_papers\/optimiser-la-commande-de-grille-des-mosfet-sic\/","title":{"rendered":"Optimiser la commande de grille des MOSFET SiC"},"content":{"rendered":"<p>Les MOSFET au carbure de silicium (ou SiC) pr\u00e9sentent de nets avantages par rapport aux MOSFET et IGBT traditionnels au silicium pour les applications de commutation de puissance haute tension. La commutation \u00e0 haute fr\u00e9quence (de l\u2019ordre de la centaines de kHz) est possible avec les MOSFET au silicium, mais ils n\u2019autorisent pas de tensions tr\u00e8s \u00e9lev\u00e9es (&gt;\u00a01\u00a0000\u00a0V). \u00c0 l&rsquo;inverse, si les IGBT peuvent fonctionner aux tensions \u00e9lev\u00e9es, leur \u00ab\u00a0courant r\u00e9siduel \u00e0 l\u2019ouverture\u00a0\u00bb et leur lenteur de coupure les limitent aux applications de commutation basse fr\u00e9quence. Les MOSFET SiC offrent le meilleur des deux mondes\u00a0: commutation haute fr\u00e9quence et haute tension. Toutefois, les caract\u00e9ristiques uniques des MOSFET SiC font qu&rsquo;ils imposent des exigences particuli\u00e8res au niveau commande de grille. Bien comprendre ces caract\u00e9ristiques permet aux concepteurs de s\u00e9lectionner des circuits de commande de grille capablent d\u2019am\u00e9liorer la fiabilit\u00e9 du dispositif et ses performances de commutation globales. Dans cet article, nous abordons les caract\u00e9ristiques des transistors MOSFET SiC et les exigences qu&rsquo;ils imposent \u00e0 leurs circuits de commande de grille, avant de proposer un circuit int\u00e9gr\u00e9 r\u00e9pondant \u00e0 ces pr\u00e9occupations, ainsi qu\u2019\u00e0 d&rsquo;autres consid\u00e9rations syst\u00e8me.<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Les MOSFET au carbure de silicium (ou SiC) pr\u00e9sentent de nets avantages par rapport aux MOSFET et IGBT traditionnels au silicium pour les applications de commutation de puissance haute tension. La commutation \u00e0 haute fr\u00e9quence (de l\u2019ordre de la centaines de kHz) est possible avec les MOSFET au silicium, mais ils n\u2019autorisent pas de tensions [&hellip;]<\/p>\n","protected":false},"featured_media":416086,"template":"","tags":[],"company":[835],"wp_category":[],"ppma_author":[1154],"class_list":["post-416083","white_papers","type-white_papers","status-publish","has-post-thumbnail","hentry","company-on-semiconductor-2"],"acf":[],"yoast_head":"<title>Optimiser la commande de grille des MOSFET SiC ...<\/title>\n<meta name=\"description\" content=\"Optimiser la commande de grille des MOSFET SiC\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/white_papers\/416083\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" 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