{"id":19685,"date":"2019-07-30T22:12:27","date_gmt":"2019-07-30T22:12:27","guid":{"rendered":"https:\/\/\/white_papers\/adaptation-des-drivers-de-grille-de-transistors-de-puissance-gan-en-mode-enrichissement\/"},"modified":"2022-01-26T15:08:00","modified_gmt":"2022-01-26T15:08:00","slug":"adaptation-des-drivers-de-grille-de-transistors-de-puissance-gan-en-mode-enrichissement","status":"publish","type":"white_papers","link":"https:\/\/www.ecinews.fr\/fr\/white_papers\/adaptation-des-drivers-de-grille-de-transistors-de-puissance-gan-en-mode-enrichissement\/","title":{"rendered":"Adaptation des drivers de grille de transistors de puissance GaN en mode enrichissement"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"<p>Les dispositifs \u00e0 base de nitrure de gallium (GaN) sont ce qui se rapproche le plus du commutateur semiconducteur id\u00e9al, puisqu\u2019ils assurent une conversion d\u2019\u00e9nergie avec un rendement tr\u00e8s \u00e9lev\u00e9, et donc avec une densit\u00e9 de puissance \u00e9lev\u00e9e. Cependant, les dispositifs GaN ne sont \u00e0 certains \u00e9gards pas aussi robustes que ceux issus des technologies silicium classiques, et doivent donc \u00eatre mis en \u0153uvre avec soin, et avec un driver de grille adapt\u00e9, pour fournir des performances et une fiabilit\u00e9 optimales. Cet article examine les probl\u00e8mes pos\u00e9s, et pr\u00e9sente une solution pour r\u00e9duire les risques au niveau conception.<\/p>\n","protected":false},"featured_media":19687,"template":"","tags":[],"company":[117],"wp_category":[],"ppma_author":[],"class_list":["post-19685","white_papers","type-white_papers","status-publish","has-post-thumbnail","hentry","company-on-semiconductor"],"acf":[],"yoast_head":"<title>Adaptation des drivers de grille de transistors de puissance Ga...<\/title>\n<meta name=\"description\" content=\"Les dispositifs \u00e0 base de nitrure de gallium (GaN) sont ce qui se rapproche le plus du commutateur semiconducteur id\u00e9al, puisqu\u2019ils assurent une...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/white_papers\/19685\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Adaptation des drivers de grille de transistors de puissance GaN en mode enrichissement\" \/>\n<meta property=\"og:description\" content=\"Les dispositifs \u00e0 base de nitrure de gallium (GaN) sont ce qui se rapproche le plus du commutateur semiconducteur id\u00e9al, puisqu\u2019ils assurent une conversion d\u2019\u00e9nergie avec un rendement tr\u00e8s \u00e9lev\u00e9, et donc avec une densit\u00e9 de puissance \u00e9lev\u00e9e. Cependant, les dispositifs GaN ne sont \u00e0 certains \u00e9gards pas aussi robustes que ceux issus des technologies silicium classiques, et doivent donc \u00eatre mis en \u0153uvre avec soin, et avec un driver de grille adapt\u00e9, pour fournir des performances et une fiabilit\u00e9 optimales. 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