{"id":19202,"date":"2020-01-19T23:04:38","date_gmt":"2020-01-19T23:04:38","guid":{"rendered":"https:\/\/\/white_papers\/le-gan-prend-le-relais-du-silicium-pour-les-circuits-de-puissance-haute-frequence-et-a-haut-rendement\/"},"modified":"2022-01-26T15:07:09","modified_gmt":"2022-01-26T15:07:09","slug":"le-gan-prend-le-relais-du-silicium-pour-les-circuits-de-puissance-haute-frequence-et-a-haut-rendement","status":"publish","type":"white_papers","link":"https:\/\/www.ecinews.fr\/fr\/white_papers\/le-gan-prend-le-relais-du-silicium-pour-les-circuits-de-puissance-haute-frequence-et-a-haut-rendement\/","title":{"rendered":"Le GaN prend le relais du silicium pour les circuits de puissance haute fr\u00e9quence et \u00e0 haut rendement"},"content":{"rendered":"","protected":false},"excerpt":{"rendered":"<p>La densit\u00e9 de puissance est un des crit\u00e8res cl\u00e9s de toutes les applications d\u2019\u00e9lectronique de puissance, et progresse en grande partie gr\u00e2ce \u00e0 des rendements sup\u00e9rieurs et des fr\u00e9quences de commutation plus \u00e9lev\u00e9es. Alors que la technologie silicium atteint ses limites d\u2019\u00e9volution, les concepteurs se tournent d\u00e9sormais vers les technologies n\u00e9cessitant plus d\u2019\u00e9nergie pour permettre \u00e0 un \u00e9lectron de passer de la bande de valence \u00e0 la bande de conduction, comme le nitrure de gallium (GaN), pour trouver des solutions.<\/p>\n","protected":false},"featured_media":19204,"template":"","tags":[],"company":[117],"wp_category":[],"ppma_author":[],"class_list":["post-19202","white_papers","type-white_papers","status-publish","has-post-thumbnail","hentry","company-on-semiconductor"],"acf":[],"yoast_head":"<title>Le GaN prend le relais du silicium pour les circuits de puissan...<\/title>\n<meta name=\"description\" content=\"La densit\u00e9 de puissance est un des crit\u00e8res cl\u00e9s de toutes les applications d\u2019\u00e9lectronique de puissance, et progresse en grande partie gr\u00e2ce \u00e0 des...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/white_papers\/19202\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Le GaN prend le relais du silicium pour les circuits de puissance haute fr\u00e9quence et \u00e0 haut rendement\" \/>\n<meta property=\"og:description\" content=\"La densit\u00e9 de puissance est un des crit\u00e8res cl\u00e9s de toutes les applications d\u2019\u00e9lectronique de puissance, et progresse en grande partie gr\u00e2ce \u00e0 des rendements sup\u00e9rieurs et des fr\u00e9quences de commutation plus \u00e9lev\u00e9es. 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