{"id":93468,"date":"2019-03-03T23:31:44","date_gmt":"2019-03-03T23:31:44","guid":{"rendered":"https:\/\/\/acceleration-sur-la-technologie-gan-sur-silicium-pour-soutenir-le-deploiement-des-infrastructures-5g\/"},"modified":"2019-03-03T23:31:44","modified_gmt":"2019-03-03T23:31:44","slug":"acceleration-sur-la-technologie-gan-sur-silicium-pour-soutenir-le-deploiement-des-infrastructures-5g","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/acceleration-sur-la-technologie-gan-sur-silicium-pour-soutenir-le-deploiement-des-infrastructures-5g\/","title":{"rendered":"Acc\u00e9l\u00e9ration sur la technologie GaN sur silicium pour soutenir le d\u00e9ploiement des infrastructures 5G"},"content":{"rendered":"<p>Le d\u00e9ploiement mondial des r\u00e9seaux 5G et l&rsquo;adoption de configurations d&rsquo;antennes M-MIMO (Massive-MIMO &#8211; Multiple Input, Multiple Output) devraient entra\u00eener une augmentation significative de la demande en composants de puissance RF. MACOM pr\u00e9voit notamment que le nombre d&rsquo;amplificateurs de puissance n\u00e9cessaires sera multipli\u00e9 par 32 \u00e0 64. De plus, cette hausse devrait multiplier par plus de trois le contenu en dollars des investissements consacr\u00e9s aux infrastructures 5G au cours d&rsquo;un cycle de cinq ann\u00e9es, avec \u00e0 la cl\u00e9, selon les estimations, une division du co\u00fbt par amplificateur par 10 \u00e0 20.<\/p>\n<p>\u00ab&nbsp;Les principaux \u00e9quipementiers sp\u00e9cialis\u00e9s dans la fabrication des stations de base savent qu&rsquo;ils ont besoin des performances large bande du GaN, qui permet \u00e9galement un changement des structures de co\u00fbts et de capacit\u00e9s de production suffisantes pour atteindre leurs objectifs de co\u00fbt, de port\u00e9e et d&rsquo;efficacit\u00e9 \u00e9nerg\u00e9tique sur le terrain. En collaborant avec ST, nous sommes convaincus que MACOM est particuli\u00e8rement bien plac\u00e9 pour atteindre tous ces objectifs, que ce soit en termes de performances, de co\u00fbts ou d&rsquo;approvisionnement en grands volumes&nbsp;\u00bb,&nbsp;a d\u00e9clar\u00e9&nbsp;John Croteau, President et CEO de MACOM. \u00ab&nbsp;Nous pr\u00e9voyons que notre investissement conjoint en capacit\u00e9 de production additionnelle \u00e0 ce stade pr\u00e9coce nous positionne pour satisfaire jusqu&rsquo;\u00e0 85&nbsp;% des besoins inh\u00e9rents au d\u00e9ploiement mondial de la 5G.&nbsp;\u00bb<\/p>\n<p>\u00ab&nbsp;ST s&rsquo;est dot\u00e9 d&rsquo;une base solide avec sa position de leader mondial dans le domaine du carbure de silicium, et nous allons aujourd&rsquo;hui de l&rsquo;avant avec la technologie RF en GaN sur silicium, qui permettra aux \u00e9quipementiers de b\u00e2tir une nouvelle g\u00e9n\u00e9ration de r\u00e9seaux 5G de haute performance&nbsp;\u00bb,&nbsp;a d\u00e9clar\u00e9 Marco Monti, President, Groupe Produits Automobiles et Discrets, STMicroelectronics.&nbsp;\u00ab&nbsp;Si le carbure de silicium convient id\u00e9alement \u00e0 certaines applications de puissance telles que la conversion de puissance en environnement automobile, le GaN sur silicium conjugue les performances&nbsp;RF, les volumes et les structures de co\u00fbts commerciaux indispensables pour que la 5G soit une r\u00e9alit\u00e9. Dans cette perspective, ST et MACOM entendent \u00e9liminer les goulots d&rsquo;\u00e9tranglement industriels et satisfaire la demande li\u00e9e&nbsp;au d\u00e9ploiement des infrastructures r\u00e9seau pour la 5G.&nbsp;\u00bb<\/p>\n<p><a href=\"https:\/\/www.macom.com\/gan%20\/t%20_blank\">macom.co<\/a><a href=\"http:\/\/macom.com\/gan\">m\/gan<\/a><\/p>\n<p><a href=\"http:\/\/www.st.com\/%20\/t%20_blank\">www.st.com<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>MACOM Technology Solutions Holdings, Inc. et STMicroelectronics annoncent l&rsquo;expansion, en 2019, de la capacit\u00e9 de production de plaquettes en nitrure de gallium sur silicium (GaN-on-Silicon) en 150 mm dans les usines de fabrication de ST, et en 200 mm en fonction de la demande. Cette expansion a pour but de soutenir le d\u00e9ploiement des infrastructures r\u00e9seau t\u00e9l\u00e9coms 5G dans le monde entier. Ceci s&rsquo;inscrit par ailleurs dans le prolongement de l&rsquo;accord sign\u00e9 par MACOM et ST d\u00e9but 2018 portant sur le GaN sur silicium.<\/p>\n","protected":false},"author":9,"featured_media":93469,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-93468","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Acc\u00e9l\u00e9ration sur la technologie GaN sur silicium pour souteni...<\/title>\n<meta name=\"description\" content=\"MACOM Technology Solutions Holdings, Inc. et STMicroelectronics annoncent l&#039;expansion, en 2019, de la capacit\u00e9 de production de plaquettes en nitrure de...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/93468\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Acc\u00e9l\u00e9ration sur la technologie GaN sur silicium pour soutenir le d\u00e9ploiement des infrastructures 5G\" \/>\n<meta property=\"og:description\" content=\"MACOM Technology Solutions Holdings, Inc. et STMicroelectronics annoncent l&#039;expansion, en 2019, de la capacit\u00e9 de production de plaquettes en nitrure de gallium sur silicium (GaN-on-Silicon) en 150 mm dans les usines de fabrication de ST, et en 200 mm en fonction de la demande. 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