{"id":78760,"date":"2019-08-20T22:31:27","date_gmt":"2019-08-20T22:31:27","guid":{"rendered":"https:\/\/\/toshiba-memory-europe-lance-une-memoire-entre-dram-et-nand\/"},"modified":"2019-08-20T22:31:27","modified_gmt":"2019-08-20T22:31:27","slug":"toshiba-memory-europe-lance-une-memoire-entre-dram-et-nand","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/toshiba-memory-europe-lance-une-memoire-entre-dram-et-nand\/","title":{"rendered":"Toshiba Memory Europe lance une m\u00e9moire entre DRAM et NAND"},"content":{"rendered":"<p>Si les m\u00e9moires&nbsp;volatiles comme la DRAM offrent la vitesse d&rsquo;acc\u00e8s n\u00e9cessaire aux applications les plus exigeantes, cette performance a un co\u00fbt \u00e9lev\u00e9. Alors que le co\u00fbt par bit et l&rsquo;\u00e9volutivit\u00e9 des DRAM se stabilisent, cette nouvelle couche SCM au sein de la hi\u00e9rarchie m\u00e9moire s&rsquo;attaque au probl\u00e8me, avec une solution m\u00e9moire Flash NAND non-volatile, haute-densit\u00e9 et \u00e9conomique. Alors que le march\u00e9 des m\u00e9moires SCM est en croissance, le cabinet d&rsquo;analyse IDC estime qu\u2019il va d\u00e9passer 3&nbsp;milliards de dollars en 2022.<\/p>\n<p>Entre la DRAM et la Flash NAND, la XL-FLASH apporte un gain de vitesse, une latence r\u00e9duite et des capacit\u00e9s de stockage sup\u00e9rieures, le tout \u00e0 un co\u00fbt inf\u00e9rieur \u00e0 celui des DRAM traditionnelles. La XL-FLASH sera initialement d\u00e9ploy\u00e9e dans des disques SSD, mais pourrait&nbsp;\u00eatre \u00e9tendue \u00e0 d\u2019autres dispositifs connect\u00e9s aux canaux m\u00e9moire par l\u2019interm\u00e9diaire du bus DRAM, comme les futurs modules m\u00e9moire NVDIMM (Non-Volatile Dual In-line Memory Module).<\/p>\n<p><strong>Principales caract\u00e9ristiques:<\/strong><\/p>\n<p>\u00b7&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;Puce 128 Gbits&nbsp;(en bo\u00eetiers de 2, 4 ou 8 puces)<\/p>\n<p>\u00b7&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;Taille de page 4&nbsp;Ko&nbsp;pour des lectures et \u00e9critures du syst\u00e8me d&rsquo;exploitation plus efficaces<\/p>\n<p>\u00b7&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;Architecture \u00e0 16 plans&nbsp;pour un parall\u00e9lisme plus efficace<\/p>\n<p>\u00b7&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;&nbsp;Lecture et \u00e9criture de page rapides&nbsp;La XL-FLASH offre une faible latence de lecture (inf\u00e9rieure \u00e0 5&nbsp;microsecondes), ce qui est environ 10&nbsp;fois plus rapide que la Flash TLC existante.<\/p>\n<p>\u00ab&nbsp;La XL-FLASH est la NAND la plus performante du march\u00e9, gr\u00e2ce \u00e0 l&rsquo;utilisation de notre BiCS FLASH en mode SLC,&nbsp;\u00bb a d\u00e9clar\u00e9 Axel Stoermann, Vice-Pr\u00e9sident de Toshiba Memory Europe.&nbsp;\u00ab&nbsp;En ne stockant qu&rsquo;un bit par cellule, nous sommes en mesure d\u2019augmenter consid\u00e9rablement les performances. Et comme la XL-FLASH s\u2019appuie sur des technologies \u00e9prouv\u00e9es d\u00e9j\u00e0 produites en s\u00e9rie, nos clients vont pouvoir r\u00e9duire leur \u201ctime-to-market&nbsp;en adoptant la XL-FLASH comme m\u00e9moire de classe stockage.&nbsp;\u00bb&nbsp;Les premiers \u00e9chantillons seront livr\u00e9s en septembre 2019, et la production en s\u00e9rie devrait d\u00e9marrer en 2020.&nbsp;<\/p>\n<p><a href=\"http:\/\/business.toshiba-memory.com\">business.toshiba-memory.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba Memory Europe a annonc\u00e9 le lancement d&rsquo;une nouvelle m\u00e9moire SCM (Storage Class Memory) : la XL-FLASH. Bas\u00e9e sur la technologie innovante de m\u00e9moire Flash 3D BiCS FLASH \u00e0 cellules SLC (Single Level Cell) \u00e0 1 bit par cellule de la soci\u00e9t\u00e9, la XL-FLASH garantit une faible latence et des performances \u00e9lev\u00e9es aux centres de donn\u00e9es et au stockage d\u2019entreprise. Class\u00e9e comme SCM (ou m\u00e9moire persistante), avec la capacit\u00e9 de conserver son contenu comme une m\u00e9moire Flash NAND, la XL-FLASH comble l&rsquo;\u00e9cart de performance existant entre DRAM et NAND.<\/p>\n","protected":false},"author":9,"featured_media":78761,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-78760","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Toshiba Memory Europe lance une m\u00e9moire entre DRAM et NAND ...<\/title>\n<meta name=\"description\" content=\"Toshiba Memory Europe a annonc\u00e9 le lancement d&#039;une nouvelle m\u00e9moire SCM (Storage Class Memory) : la XL-FLASH. Bas\u00e9e sur la technologie innovante de...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/78760\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Toshiba Memory Europe lance une m\u00e9moire entre DRAM et NAND\" \/>\n<meta property=\"og:description\" content=\"Toshiba Memory Europe a annonc\u00e9 le lancement d&#039;une nouvelle m\u00e9moire SCM (Storage Class Memory) : la XL-FLASH. Bas\u00e9e sur la technologie innovante de m\u00e9moire Flash 3D BiCS FLASH \u00e0 cellules SLC (Single Level Cell) \u00e0 1 bit par cellule de la soci\u00e9t\u00e9, la XL-FLASH garantit une faible latence et des performances \u00e9lev\u00e9es aux centres de donn\u00e9es et au stockage d\u2019entreprise. Class\u00e9e comme SCM (ou m\u00e9moire persistante), avec la capacit\u00e9 de conserver son contenu comme une m\u00e9moire Flash NAND, la XL-FLASH comble l&#039;\u00e9cart de performance existant entre DRAM et NAND.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/78760\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2019-08-20T22:31:27+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci8106_toshiba.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"1262\" \/>\n\t<meta property=\"og:image:height\" content=\"1000\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Alain Dieul\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" 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