{"id":73520,"date":"2019-10-17T15:31:44","date_gmt":"2019-10-17T15:31:44","guid":{"rendered":"https:\/\/\/rohm-presente-un-nouveau-boitier-de-mosfet-sic-4-broches\/"},"modified":"2019-10-17T15:31:44","modified_gmt":"2019-10-17T15:31:44","slug":"rohm-presente-un-nouveau-boitier-de-mosfet-sic-4-broches","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/rohm-presente-un-nouveau-boitier-de-mosfet-sic-4-broches\/","title":{"rendered":"ROHM pr\u00e9sente un nouveau bo\u00eetier de MOSFET SiC 4 broches"},"content":{"rendered":"<p>Ces derni\u00e8res ann\u00e9es, les besoins croissants de services de cloud dus \u00e0 la prolif\u00e9ration de l\u2019IA et de l\u2019IoT ont accru la demande de centres de donn\u00e9es dans le monde entier. Mais pour les serveurs utilis\u00e9s dans les centres de donn\u00e9es, un d\u00e9fi majeur est de savoir comment r\u00e9duire la consommation d\u2019\u00e9nergie \u00e0 mesure que la capacit\u00e9 et les performances augmentent. Dans le m\u00eame temps, les composants SiC attirent l\u2019attention en raison de leur meilleur efficacit\u00e9 et les faibles pertes par rapport aux appareils grand public utilisant des composants silicium dans les circuits de conversion d\u2019\u00e9nergie des serveurs. De plus, comme le bo\u00eetier TO-247-4L permet de r\u00e9duire les pertes de commutation par rapport aux bo\u00eetiers conventionnels, il devrait \u00eatre adopt\u00e9 dans les applications \u00e0 haut rendement telles que les serveurs, les stations de base et la production d\u2019\u00e9nergie solaire.<br \/>\nEn 2015 ROHM, est devenue le premier fournisseur \u00e0 r\u00e9ussir la production en masse de MOSFET SiC de type &nbsp;\u00ab Trench \u00bb, et continue \u00e0 \u00eatre le leader de l\u2019industrie dans le d\u00e9veloppement de ce type de technologie . En plus de ces derniers MOSFET SiC 650 V\/1200 V hautes performances, nous nous engageons \u00e0 d\u00e9velopper des appareils innovants et \u00e0 proposer des solutions qui contribuent \u00e0 r\u00e9duire la consommation d\u2019\u00e9nergie de nombreux appareils, y compris des circuits int\u00e9gr\u00e9s de commande de de grille (Gate Driver) optimis\u00e9s pour la commande SiC.<br \/>\nROHM propose aussi des solutions qui facilitent l\u2019\u00e9valuation d\u2019application, incluant une carte d\u2019\u00e9valuation de MOSFET SiC,&nbsp;<a href=\"https:\/\/www.rohm.com\/power-device-support%20\/t%20_blank\">P02SCT3040KR-EVK-001<\/a>, \u00e9quip\u00e9e d\u2019un circuit int\u00e9gr\u00e9 de commande de grille (BM6101FV-C) ainsi que de multiples circuits int\u00e9gr\u00e9s d\u2019alimentation et des composants discrets optimis\u00e9s pour la commande d\u2019appareils SiC.&nbsp;<\/p>\n<p><strong><u>Gamme<\/u><\/strong><br \/>\nLa s\u00e9rie SCT3xxx xR se compose de MOSFET SiC utilisant une structure de grille &nbsp;\u00ab Trench \u00bb. Six mod\u00e8les sont propos\u00e9s, avec une tension de rupture de 650 V (3 produits) ou 1200 V (3 produits).<br \/>\nLa carte d\u2019\u00e9valuation de MOSFET SiC de ROHM (P02SCT3040KR-EVK-001) est \u00e9quip\u00e9e de notre circuit int\u00e9gr\u00e9 de commande de grille (BM6101FV-C) optimis\u00e9 pour piloter des appareils SiC avec de multiples circuits int\u00e9gr\u00e9s d\u2019alimentation et des composants discrets suppl\u00e9mentaires qui facilitent l\u2019\u00e9valuation et le d\u00e9veloppement des applications. La compatibilit\u00e9 avec les types de bo\u00eetiers TO-247-4L et TO-247N permet d\u2019\u00e9valuer les deux bo\u00eetiers dans les m\u00eames conditions. La carte peut \u00eatre utilis\u00e9e pour les tests \u00e0 double impulsion ainsi que pour l\u2019\u00e9valuation de composants dans les circuits boost, les onduleurs \u00e0 2 niveaux et les circuits synchrones buck de redressement.&nbsp;<\/p>\n<p><a href=\"https:\/\/www.rohm.com\/power-device-support%20\/t%20_blank\">www.rohm.com\/power-device-support<\/a><\/p>\n<p><a href=\"http:\/\/www.rohm.com\/eu%20\/t%20_blank\">www.rohm.com\/eu<\/a><\/p>\n<h3 class=\"title\"><a href=\"https:\/\/www.electronique-eci.com\/news\/convertisseur-cccc-buck-boost-de-rohm-realise-une-percee-dans-les-economies-de-courant\">Convertisseur CC\/CC Buck-Boost de ROHM r\u00e9alise une perc\u00e9e dans les \u00e9conomies de courant<\/a><\/h3>\n<h3 class=\"title\"><a href=\"https:\/\/www.electronique-eci.com\/news\/driver-de-led-de-qualite-automobile-pour-les-retroeclairages\">Driver de LED de qualit\u00e9 automobile pour les r\u00e9tro\u00e9clairages<\/a><\/h3>\n<h3 class=\"title\"><a href=\"https:\/\/www.electronique-eci.com\/news\/circuit-integre-de-surveillance-dalimentation-avec-fonction-dautodiagnostic-integree\">Circuit int\u00e9gr\u00e9 de surveillance d\u2019alimentation avec fonction d\u2019autodiagnostic int\u00e9gr\u00e9e<\/a><\/h3>\n<h3 class=\"title\"><a href=\"https:\/\/www.electronique-eci.com\/news\/mosfet-600v-super-jonction-de-rohm\">MOSFET 600V \u00e0 super-jonction de ROHM<\/a><\/h3>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>ROHM a annonc\u00e9 la disponibilit\u00e9 de six nouveaux MOSFET SiC \u00e0 structure de grille dite \u00ab trench \u00bb (650 V\/1200 V), la s\u00e9rie SCT3xxx xR-Serie, id\u00e9ale pour la gestion des alimentations des serveurs, onduleurs, des onduleurs d\u2019\u00e9nergie solaire et des stations de recharge pour VE requ\u00e9rant une efficacit\u00e9 \u00e9lev\u00e9e. La s\u00e9rie SCT3xxx xR fait appel \u00e0 un bo\u00eetier 4 broches (TO-247-4L) maximisant les performances de commutation, permettant de r\u00e9duire les pertes de commutation de jusqu\u2019\u00e0 35 % par rapport aux types de bo\u00eetiers conventionnels \u00e0 3 broches (TO-247N). Cela contribue \u00e0 r\u00e9duire la consommation d\u2019\u00e9nergie dans de nombreuses applications.<\/p>\n","protected":false},"author":9,"featured_media":73521,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-73520","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>ROHM pr\u00e9sente un nouveau bo\u00eetier de MOSFET SiC 4 broches ...<\/title>\n<meta name=\"description\" content=\"ROHM a annonc\u00e9 la disponibilit\u00e9 de six nouveaux MOSFET SiC \u00e0 structure de grille dite \u00ab trench \u00bb (650 V\/1200 V), la s\u00e9rie SCT3xxx xR-Serie, id\u00e9ale...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/73520\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"ROHM pr\u00e9sente un nouveau bo\u00eetier de MOSFET SiC 4 broches\" \/>\n<meta property=\"og:description\" content=\"ROHM a annonc\u00e9 la disponibilit\u00e9 de six nouveaux MOSFET SiC \u00e0 structure de grille dite \u00ab trench \u00bb (650 V\/1200 V), la s\u00e9rie SCT3xxx xR-Serie, id\u00e9ale pour la gestion des alimentations des serveurs, onduleurs, des onduleurs d\u2019\u00e9nergie solaire et des stations de recharge pour VE requ\u00e9rant une efficacit\u00e9 \u00e9lev\u00e9e. La s\u00e9rie SCT3xxx xR fait appel \u00e0 un bo\u00eetier 4 broches (TO-247-4L) maximisant les performances de commutation, permettant de r\u00e9duire les pertes de commutation de jusqu\u2019\u00e0 35 % par rapport aux types de bo\u00eetiers conventionnels \u00e0 3 broches (TO-247N). 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