{"id":66048,"date":"2020-01-22T23:31:44","date_gmt":"2020-01-22T23:31:44","guid":{"rendered":"https:\/\/\/accelerez-les-cycles-de-conception-de-vos-convertisseurs-de-puissance\/"},"modified":"2020-01-22T23:31:44","modified_gmt":"2020-01-22T23:31:44","slug":"accelerez-les-cycles-de-conception-de-vos-convertisseurs-de-puissance","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/accelerez-les-cycles-de-conception-de-vos-convertisseurs-de-puissance\/","title":{"rendered":"Acc\u00e9l\u00e9rez les cycles de conception de vos convertisseurs de puissance"},"content":{"rendered":"<p>La plate-forme GDEV est dot\u00e9e de bornes \u00e0 raccordement rapide qui permettent une comparaison rapide et homog\u00e8ne des diff\u00e9rents circuits de commande de grille, contrairement \u00e0 la plupart des autres plates-formes d\u2019\u00e9valuation SiC. La plate-forme GDEV prend en charge une tension en entr\u00e9e de 800 V CC et une fr\u00e9quence de commutation pouvant atteindre 200 kHz.<\/p>\n<p>\u00ab&nbsp;La plate-forme Gate Drive Evaluation (GDEV) est un ajout fondamental \u00e0 notre portefeuille de technologies SiC, car le SiC est encore relativement nouveau et des incertitudes persistent concernant ses caract\u00e9ristiques de fonctionnement dans diff\u00e9rentes conditions&nbsp;\u00bb, explique Corey Deyalsingh, directeur de l\u2019activit\u00e9 Power Control chez Littelfuse. \u00ab&nbsp;La GDEV aide les ing\u00e9nieurs \u00e0 comprendre les caract\u00e9ristiques op\u00e9rationnelles des \u00e9quipements SiC. En utilisant cette plate-forme d\u2019\u00e9valuation, ils seront mieux inform\u00e9s des opportunit\u00e9s de rendement \u00e9nerg\u00e9tique incroyables offertes par les technologies SiC. Forts de ces connaissances, les concepteurs seront, selon nous, plus susceptibles d\u2019int\u00e9grer le SiC dans leurs futures conceptions.&nbsp;\u00bb<\/p>\n<p>Gr\u00e2ce \u00e0 la plate-forme Gate Drive Evaluation de Littelfuse, les utilisateurs peuvent :<\/p>\n<p>\u2022&nbsp;\u00c9valuer le fonctionnement continu des MOSFET et diodes de puissance SiC avec une tension nominale et un courant nominal offrant une v\u00e9ritable puissance de charge.<\/p>\n<p>\u2022&nbsp;Analyser les impacts au niveau du syst\u00e8me associ\u00e9s aux conceptions \u00e0 base de carbure de silicium, notamment l&rsquo;am\u00e9lioration de l\u2019efficacit\u00e9, les \u00e9missions EMI et les composants passifs (taille, poids, co\u00fbt).<\/p>\n<p>\u2022&nbsp;Comparer les performances des diff\u00e9rentes solutions de commande de grille dans des conditions de test bien d\u00e9finies et optimis\u00e9es.<\/p>\n<p>\u2022&nbsp;Tester les circuits de commande de grille dans des conditions de fonctionnement en continu afin d\u2019\u00e9valuer les performances thermiques des syst\u00e8mes de commande de grille et l\u2019immunit\u00e9 EMI.<\/p>\n<p><a href=\"https:\/\/www.littelfuse.com\/%20\/t%20_blank\">littelfuse.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Littelfuse, Inc. annonce le lancement de sa plate-forme Gate Drive Evaluation (GDEV). Cette nouvelle plate-forme d\u2019\u00e9valuation aide les concepteurs \u00e0 \u00e9valuer les MOSFET SiC, les diodes Schottky SiC et d&rsquo;autres composants p\u00e9riph\u00e9riques tels que les circuits de commande de grille afin de mieux comprendre le comportement des technologies au carbure de silicium dans les applications de conversion exploit\u00e9es en continu.<\/p>\n","protected":false},"author":9,"featured_media":66049,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-66048","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Acc\u00e9l\u00e9rez les cycles de conception de vos convertisseurs de p...<\/title>\n<meta name=\"description\" content=\"Littelfuse, Inc. annonce le lancement de sa plate-forme Gate Drive Evaluation (GDEV). 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Cette nouvelle plate-forme d\u2019\u00e9valuation aide les concepteurs \u00e0 \u00e9valuer les MOSFET SiC, les diodes Schottky SiC et d&#039;autres composants p\u00e9riph\u00e9riques tels que les circuits de commande de grille afin de mieux comprendre le comportement des technologies au carbure de silicium dans les applications de conversion exploit\u00e9es en continu.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/66048\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2020-01-22T23:31:44+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/cdn.eenewseurope.com\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci8393_littelfuse.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"460\" \/>\n\t<meta property=\"og:image:height\" content=\"382\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta 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