{"id":63030,"date":"2020-02-24T09:31:44","date_gmt":"2020-02-24T09:31:44","guid":{"rendered":"https:\/\/\/stmicroelectronics-et-tsmc-veulent-accelerer-ladoption-du-gan\/"},"modified":"2020-02-24T09:31:44","modified_gmt":"2020-02-24T09:31:44","slug":"stmicroelectronics-et-tsmc-veulent-accelerer-ladoption-du-gan","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/stmicroelectronics-et-tsmc-veulent-accelerer-ladoption-du-gan\/","title":{"rendered":"STMicroelectronics et TSMC veulent acc\u00e9l\u00e9rer l\u2019adoption du GaN"},"content":{"rendered":"<p>Le nitrure de gallium (GaN) est un mat\u00e9riau semiconducteur \u00e0 large bande (WBG \u2014&nbsp;Wide Band Gap) qui apporte aux applications de puissance des avantages consid\u00e9rables par rapport aux semiconducteurs traditionnels \u00e0 base de silicium. Parmi ces avantages figure notamment une efficacit\u00e9 \u00e9nerg\u00e9tique sup\u00e9rieure \u00e0 des niveaux de puissance plus \u00e9lev\u00e9s, avec \u00e0 la cl\u00e9, une r\u00e9duction substantielle des pertes d\u2019\u00e9nergie parasites. La technologie GaN permet \u00e9galement de concevoir des dispositifs plus compacts pour des formats plus flexibles. De plus, les circuits en GaN commutent \u00e0 des vitesses jusqu\u2019\u00e0 10&nbsp;fois sup\u00e9rieures \u00e0 celles des composants en silicium tout en pouvant fonctionner \u00e0 des pics de temp\u00e9rature plus \u00e9lev\u00e9s. Gr\u00e2ce \u00e0 ses caract\u00e9ristiques robustes et intrins\u00e8ques, le nitrure de gallium dispose de solides atouts pour s\u2019imposer \u00e0 grande \u00e9chelle dans les secteurs en pleine \u00e9volution de l\u2019automobile, de l\u2019industriel et des t\u00e9l\u00e9communications, ainsi que dans certaines applications d\u2019\u00e9lectronique grand public dans des gammes de tension (clusters) de 100 V et 650&nbsp;V.<\/p>\n<p>Sp\u00e9cifiquement, les produits r\u00e9alis\u00e9s dans les technologies GaN et GaN de puissance permettront \u00e0 ST de fournir des solutions pour applications de puissance moyenne et \u00e9lev\u00e9e qui afficheront un rendement \u00e9nerg\u00e9tique sup\u00e9rieur aux technologies en silicium bas\u00e9es sur les m\u00eames topologies, parmi lesquelles les convertisseurs pour l\u2019automobile et les chargeurs pour v\u00e9hicules \u00e9lectriques et hybrides. Les technologies de puissance et circuits int\u00e9gr\u00e9s en GaN contribueront \u00e0 acc\u00e9l\u00e9rer la tendance majeure que constitue l\u2019\u00e9lectrification des v\u00e9hicules particuliers et commerciaux.<\/p>\n<p>\u00ab&nbsp;En tant que leader \u00e0 la fois dans les technologies micro\u00e9lectroniques large bande et les semiconducteurs de puissance destin\u00e9s aux march\u00e9s exigeants de l\u2019automobile et de l\u2019industriel, ST a identifi\u00e9 une importante opportunit\u00e9 en acc\u00e9l\u00e9rant le d\u00e9veloppement et la livraison du proc\u00e9d\u00e9 technologique en GaN et en mettant sur le march\u00e9 des produits de puissance et des circuits int\u00e9gr\u00e9s en nitrure de gallium. TSMC est un partenaire de confiance qui dispose des moyens de fonderie uniques pour r\u00e9pondre aux exigences en mati\u00e8re de fiabilit\u00e9 et de feuille de route des clients cibl\u00e9s par ST&nbsp;\u00bb, a d\u00e9clar\u00e9 Marco Monti, Pr\u00e9sident, Groupe Produits Automobiles et Discrets, STMicroelectronics. \u00ab&nbsp;Cette coop\u00e9ration compl\u00e8te nos activit\u00e9s existantes dans le domaine du nitrure de gallium pour applications de puissance men\u00e9es sur notre site de Tours et avec le CEA-Leti. Le GaN repr\u00e9sente la prochaine innovation majeure pour l\u2019\u00e9lectronique de puissance et l\u2019\u00e9lectronique de puissance intelligente, ainsi que pour le domaine des proc\u00e9d\u00e9s technologiques.&nbsp;\u00bb<\/p>\n<p>\u00ab&nbsp;L\u2019expertise avanc\u00e9e des proc\u00e9d\u00e9s de fabrication en GaN de TSMC, conjugu\u00e9e aux capacit\u00e9s de conception de produits et de qualification pour l\u2019automobile de STMicroelectronics, apportera d\u2019importantes am\u00e9liorations en mati\u00e8re d\u2019efficacit\u00e9 \u00e9nerg\u00e9tique aux applications de conversion de puissance pour l\u2019automobile et l\u2019industriel qui sont davantage respectueuses de l\u2019environnement et contribuent \u00e0 acc\u00e9l\u00e9rer l\u2019\u00e9lectrification des v\u00e9hicules.&nbsp;\u00bb&nbsp;explique quant \u00e0 lui le&nbsp;Dr. Kevin Zhang, Vice-Pr\u00e9sident en charge du&nbsp;Business Development, TSMC.&nbsp;<\/p>\n<p>ST pr\u00e9voit de livrer les premiers \u00e9chantillons des composants de puissance discrets en GaN \u00e0 ses principaux clients plus tard dans l\u2019ann\u00e9e, et quelques mois apr\u00e8s, des circuits int\u00e9gr\u00e9s en GaN.<\/p>\n<p><a href=\"https:\/\/www.globenewswire.com\/Tracker?data=4FhrbZwDKBu5C9FwnBeVRyYkSdhS6aNMHCLNR-ApbDTw9VamIUoDg464bPrTreOCqqZDCFX_E0oLwTS1R3G2qA==%20\\t%20_blank\">www.st.com<\/a><\/p>\n<p><a href=\"http:\/\/www.tsmc.com\/\">www.tsmc.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>STMicroelectronics et TSMC, le plus grand fondeur de semiconducteurs au monde, annoncent leur collaboration en vue d&rsquo;acc\u00e9l\u00e9rer le d\u00e9veloppement du proc\u00e9d\u00e9 technologique en nitrure de gallium (GaN) et la livraison de composants discrets et de circuits int\u00e9gr\u00e9s en GaN pour les besoins du march\u00e9. Dans le cadre de cette collaboration, les produits innovants et strat\u00e9giques con\u00e7us par ST en nitrure de gallium seront fabriqu\u00e9s en utilisant le proc\u00e9d\u00e9 technologique avanc\u00e9 en GaN de TSMC.<\/p>\n","protected":false},"author":9,"featured_media":63031,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-63030","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","domains-electronique-eci"],"acf":[],"yoast_head":"<title>STMicroelectronics et TSMC veulent acc\u00e9l\u00e9rer l\u2019adoption du ...<\/title>\n<meta name=\"description\" content=\"STMicroelectronics et TSMC, le plus grand fondeur de semiconducteurs au monde, annoncent leur collaboration en vue d&#039;acc\u00e9l\u00e9rer le d\u00e9veloppement du...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/63030\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"STMicroelectronics et TSMC veulent acc\u00e9l\u00e9rer l\u2019adoption du GaN\" \/>\n<meta property=\"og:description\" content=\"STMicroelectronics et TSMC, le plus grand fondeur de semiconducteurs au monde, annoncent leur collaboration en vue d&#039;acc\u00e9l\u00e9rer le d\u00e9veloppement du proc\u00e9d\u00e9 technologique en nitrure de gallium (GaN) et la livraison de composants discrets et de circuits int\u00e9gr\u00e9s en GaN pour les besoins du march\u00e9. 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