{"id":61607,"date":"2020-03-09T15:10:28","date_gmt":"2020-03-09T15:10:28","guid":{"rendered":"https:\/\/\/stmicro-se-renforce-dans-le-gan-avec-exagan\/"},"modified":"2020-03-09T15:10:28","modified_gmt":"2020-03-09T15:10:28","slug":"stmicro-se-renforce-dans-le-gan-avec-exagan","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/stmicro-se-renforce-dans-le-gan-avec-exagan\/","title":{"rendered":"STMicro se renforce dans le GaN avec Exagan\u00a0"},"content":{"rendered":"<p><span class=\"tlid-translation translation\" lang=\"fr\">STMicro a sign\u00e9 un accord pour acqu\u00e9rir une participation majoritaire dans Exagan, dont l&rsquo;expertise en \u00e9pitaxie, en d\u00e9veloppement de produits et en savoir-faire en mati\u00e8re d&rsquo;applications pourrait contribuer \u00e0 \u00e9largir et \u00e0 acc\u00e9l\u00e9rer la feuille de route GaN Power de ST. Exagan continuera d&rsquo;ex\u00e9cuter sa feuille de route produit et sera soutenu par ST dans le d\u00e9ploiement de ses produits.<\/span><br \/>\n<span class=\"tlid-translation translation\" lang=\"fr\">Les conditions de la transaction n&rsquo;ont pas \u00e9t\u00e9 divulgu\u00e9es et la cl\u00f4ture de l&rsquo;acquisition reste soumise aux approbations r\u00e9glementaires habituelles des autorit\u00e9s fran\u00e7aises. L&rsquo;accord pr\u00e9voit \u00e9galement l&rsquo;acquisition par ST de la participation minoritaire restante dans Exagan 24 mois apr\u00e8s la cl\u00f4ture de l&rsquo;acquisition de la participation majoritaire. La transaction est financ\u00e9e par les liquidit\u00e9s disponibles.<\/span><\/p>\n<p><span class=\"tlid-translation translation\" lang=\"fr\">\u00abSTMicro a donn\u00e9 une forte impulsion au carbure de silicium (SiC) et se d\u00e9veloppe d\u00e9sormais dans un autre mat\u00e9riau compos\u00e9 prometteur, le nitrure de gallium (GaN), pour stimuler l&rsquo;adoption de composants de puissance \u00e0 base de GaN\u00bb, a d\u00e9clar\u00e9 Jean-Marc Chery, pr\u00e9sident-directeur g\u00e9n\u00e9ral de STMicroelectronics. \u00abElle vient s&rsquo;ajouter aux d\u00e9veloppements en cours avec CEA-Leti \u00e0 Tours, en France, et \u00e0 la collaboration r\u00e9cemment annonc\u00e9e avec TSMC.\u00bb<\/span><br \/>\n<span class=\"tlid-translation translation\" lang=\"fr\">Le nitrure de gallium (GaN) appartient \u00e0 la famille des mat\u00e9riaux \u00e0 large bande interdite (WBG) qui comprennent \u00e9galement le carbure de silicium (SiC). Les dispositifs bas\u00e9s sur GaN repr\u00e9sentent une avanc\u00e9e majeure dans l&rsquo;\u00e9lectronique de puissance fournissant un fonctionnement \u00e0 haute fr\u00e9quence, avec une efficacit\u00e9 accrue et une densit\u00e9 de puissance plus \u00e9lev\u00e9e par rapport aux transistors \u00e0 base de silicium, ce qui conduit \u00e0 des \u00e9conomies d&rsquo;\u00e9nergie et \u00e0 une r\u00e9duction totale de la taille du syst\u00e8me. Les produits GaN devraient r\u00e9pondre \u00e0 une grande vari\u00e9t\u00e9 d&rsquo;applications telles que la correction du facteur de puissance et les convertisseurs CC\/CC dans les serveurs, les applications t\u00e9l\u00e9coms et industrielles, les chargeurs embarqu\u00e9s pour V\u00e9hicules Electriques et&nbsp;les convertisseurs CC-CC pour les applications automobiles, ainsi que les applications \u00e9lectroniques personnelles comme les adaptateurs d&rsquo;alimentation.<\/span><br \/>\n<span class=\"tlid-translation translation\" lang=\"fr\">Fond\u00e9e en 2014 et bas\u00e9e \u00e0 Grenoble (France), Exagan se consacre \u00e0 acc\u00e9l\u00e9rer la transition de l&rsquo;industrie de l&rsquo;\u00e9lectronique de puissance de la technologie \u00e0 base de silicium \u00e0 la technologie GaN sur silicium, permettant des convertisseurs \u00e9lectriques plus petits et plus efficaces. Ses interrupteurs de puissance GaN sont con\u00e7us pour permettre une fabrication dans les usines de plaquettes standard de 200 mm.<\/span><br \/>\n&nbsp;<\/p>\n<p><strong>Lire aussi:<\/strong><\/p>\n<p><a href=\"https:\/\/www.electronique-eci.com\/news\/stmicro-en-partenariat-avec-le-leti-pour-le-gan-en-volume-sur-200mm\">STMicro en partenariat avec le Leti pour le GaN en volume sur 200mm<\/a><\/p>\n<p><a href=\"https:\/\/www.electronique-eci.com\/news\/stmicro-en-partenariat-avec-le-leti-pour-le-gan-en-volume-sur-200mm\">Intel, Ikea investissent dans Aledia, le pionnier fran\u00e7ais des LED nanofil<\/a><\/p>\n<p><a href=\"http:\/\/www.exagan.com\">www.exagan.com<\/a><\/p>\n<p><strong>Related articles:<\/strong><\/p>\n<p><a href=\"https:\/\/www.eenewseurope.com\/news\/st-tsmc-form-gallium-nitride-partnership\">ST, TSMC form gallium nitride partnership<\/a><\/p>\n<p><a href=\"https:\/\/www.eenewseurope.com\/news\/x-fab-exagan-make-gan-si-200mm-wafers\">X-Fab, Exagan make GaN-on-Si on 200mm wafers<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Dans sa qu\u00eate du leadership dans la technologie du nitrure de gallium (GaN) \u00e0 haute efficacit\u00e9, STMicroelectronics franchit une nouvelle \u00e9tape: le fabricant de puces franco-italien pr\u00e9voit d&rsquo;acqu\u00e9rir la majorit\u00e9 des actions de l&rsquo;innovateur GaN Exagan bas\u00e9 \u00e0 Grenoble. Cette d\u00e9cision vise \u00e0 acc\u00e9l\u00e9rer l&rsquo;expertise GaN de ST, sa feuille de route et ses activit\u00e9s pour les applications automobiles, industrielles et grand public \u00e0 haute fr\u00e9quence et haute puissance.<\/p>\n","protected":false},"author":22,"featured_media":61608,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[880],"tags":[889,891,913,890],"domains":[47],"ppma_author":[1149],"class_list":["post-61607","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites-economiques","tag-analog-fr","tag-automotive-fr","tag-materials-processes-fr","tag-powermanagement-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>STMicro se renforce dans le GaN avec Exagan\u00a0 ...<\/title>\n<meta name=\"description\" content=\"Dans sa qu\u00eate du leadership dans la technologie du nitrure de gallium (GaN) \u00e0 haute efficacit\u00e9, STMicroelectronics franchit une nouvelle \u00e9tape: le...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/61607\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"STMicro se renforce dans le GaN avec Exagan\u00a0\" \/>\n<meta property=\"og:description\" content=\"Dans sa qu\u00eate du leadership dans la technologie du nitrure de gallium (GaN) \u00e0 haute efficacit\u00e9, STMicroelectronics franchit une nouvelle \u00e9tape: le fabricant de puces franco-italien pr\u00e9voit d&#039;acqu\u00e9rir la majorit\u00e9 des actions de l&#039;innovateur GaN Exagan bas\u00e9 \u00e0 Grenoble. 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