{"id":59151,"date":"2020-04-05T22:31:44","date_gmt":"2020-04-05T22:31:44","guid":{"rendered":"https:\/\/\/toshiba-lance-deux-nouveaux-mosfet-de-puissance-canal-n-80-v\/"},"modified":"2020-04-05T22:31:44","modified_gmt":"2020-04-05T22:31:44","slug":"toshiba-lance-deux-nouveaux-mosfet-de-puissance-canal-n-80-v","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/toshiba-lance-deux-nouveaux-mosfet-de-puissance-canal-n-80-v\/","title":{"rendered":"Toshiba lance deux nouveaux MOSFET de puissance canal-N 80 V"},"content":{"rendered":"

Les TPH2R408QM et TPN19008QM sont des dispositifs U-MOSX-H 80 V, qui pr\u00e9sentent une r\u00e9duction d’environ 40% de la r\u00e9sistance drain-source \u00e0 l\u2019\u00e9tat passant (RDS(ON)) par rapport aux produits 80 V \u00e9quivalents issus de processus ant\u00e9rieurs, tels que U-MOSVIII-H. Par cons\u00e9quent, le TPN19008QM pr\u00e9sente une valeur RDS(ON) de 19 m\u03a9 (maximum), contre seulement 2,43 m\u03a9 pour le TPH2R408QM.<\/p>\n

L’optimisation de la structure du dispositif a permis d\u2019am\u00e9liorer de 15% le compromis entre la valeur de RDS(ON) et la charge de grille, et de 31% celui entre la valeur de RDS(ON) et la charge en sortie. Ces facteurs, associ\u00e9s aux am\u00e9liorations de RDS(ON) , signifient que ces nouveaux MOSFET pr\u00e9sentent la plus faible dissipation thermique du march\u00e9.<\/p>\n

Ces deux MOSFET de puissance sont log\u00e9s dans des bo\u00eetiers CMS (composants \u00e0 monter en surface) et pr\u00e9sentent une tension drain-source (VDSS) nominale de 80V. Ils peuvent fonctionner avec des temp\u00e9ratures de canal (Tch) jusqu’\u00e0 175\u00baC. Le TPN19008QM offre un courant de drain (ID) nominal de 34A et se pr\u00e9sente en bo\u00eetier TSON Advance de 3,3 x 3,3 mm, tandis que le TPH2R408QM offre un ID nominal de 120A et il est log\u00e9 en bo\u00eetier SOP Advance de 5,0 x 6,0 mm.<\/p>\n

www.toshiba.semicon-storage.com<\/a><\/p>\n

Toshiba \u00e9largit sa gamme de microcontr\u00f4leurs 32 bits<\/a><\/h3>\n

Driver d\u2019IGBT \/ MOSFET \u00e0 double sortie<\/a><\/h3>\n

Driver de moteur micro-pas haute r\u00e9solution \u00e0 d\u00e9tection de courant int\u00e9gr\u00e9e<\/a><\/h3>\n","protected":false},"excerpt":{"rendered":"

Toshiba Electronics Europe a lanc\u00e9 deux nouveaux MOSFET de puissance canal-N 80 V, bas\u00e9s sur son proc\u00e9d\u00e9 de derni\u00e8re g\u00e9n\u00e9ration, U-MOSX-H. Ces deux dispositifs conviennent \u00e0 une large gamme d’applications de puissance n\u00e9cessitant un fonctionnement \u00e0 faibles pertes, notamment les applications de conversion AC-DC et DC-DC \u00e0 haut rendement des centres de donn\u00e9es et des stations de base de communication, et de nombreux variateurs de vitesse pour moteur.<\/p>\n","protected":false},"author":9,"featured_media":59152,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-59151","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"Toshiba lance deux nouveaux MOSFET de puissance canal-N 80 V ...<\/title>\n<meta name=\"description\" content=\"Toshiba Electronics Europe a lanc\u00e9 deux nouveaux MOSFET de puissance canal-N 80 V, bas\u00e9s sur son proc\u00e9d\u00e9 de derni\u00e8re g\u00e9n\u00e9ration, U-MOSX-H. 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Ces deux dispositifs conviennent \u00e0 une large gamme d'applications de puissance n\u00e9cessitant un fonctionnement \u00e0 faibles pertes, notamment les applications de conversion AC-DC et DC-DC \u00e0 haut rendement des centres de donn\u00e9es et des stations de base de communication, et de nombreux variateurs de vitesse pour moteur.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/59151\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2020-04-05T22:31:44+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/sites\/default\/files\/images\/eci8552_toshiba-1024x731.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"1024\" \/>\n\t<meta property=\"og:image:height\" content=\"731\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Alain Dieul\" 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