{"id":51719,"date":"2020-07-02T05:31:44","date_gmt":"2020-07-02T05:31:44","guid":{"rendered":"https:\/\/\/mosfet-sic-de-4e-generation-tres-faible-resistance-a-letat-passant\/"},"modified":"2020-07-02T05:31:44","modified_gmt":"2020-07-02T05:31:44","slug":"mosfet-sic-de-4e-generation-tres-faible-resistance-a-letat-passant","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-de-4e-generation-tres-faible-resistance-a-letat-passant\/","title":{"rendered":"MOSFET SiC de 4e g\u00e9n\u00e9ration tr\u00e8s faible r\u00e9sistance \u00e0 l\u2019\u00e9tat passant"},"content":{"rendered":"

Ces derni\u00e8res ann\u00e9es, le foisonnement des v\u00e9hicules \u00e9lectriques de nouvelle g\u00e9n\u00e9ration (VEx) a acc\u00e9l\u00e9r\u00e9 le d\u00e9veloppement de syst\u00e8mes \u00e9lectriques plus petits, plus l\u00e9gers et plus efficaces. En particulier, l\u2019am\u00e9lioration de l\u2019efficacit\u00e9 tout en r\u00e9duisant la taille de l\u2019onduleur principal \u2013 qui joue un r\u00f4le central dans le syst\u00e8me d\u2019entra\u00eenement \u2013 reste l\u2019un des principaux d\u00e9fis, n\u00e9cessitant des progr\u00e8s plus pouss\u00e9s dans les composants \u00e9lectroniques. Pour relever ces diff\u00e9rents d\u00e9fis, les concepteurs ont urgemment besoin de composants de puissance SiC capables de fournir une haute tension de tenue avec de faibles pertes. Mais pour les semiconducteurs, il y a souvent un compromis \u00e0 trouver entre une r\u00e9sistance \u00e0 l\u2019\u00e9tat passant et un temps de tenue aux courts-circuits, ce qui est n\u00e9cessaire pour trouver un \u00e9quilibre permettant d’obtenir des pertes plus faibles des MOSFET SiC. ROHM a su am\u00e9liorer cette relation de compromis et r\u00e9duire la r\u00e9sistance \u00e0 l\u2019\u00e9tat passant par unit\u00e9 de surface de 40 % par rapport aux produits conventionnels sans sacrifier le temps de r\u00e9sistance aux courts-circuits en am\u00e9liorant encore une structure \u00e0 double tranch\u00e9e originale. De plus, la r\u00e9duction significative de la capacitance parasitique (ce qui est un probl\u00e8me durant la commutation) rend possible de r\u00e9aliser une perte de commutation 50 % plus basse en comparaison avec notre g\u00e9n\u00e9ration pr\u00e9c\u00e9dente de MOSFET SiC.<\/p>\n

Par cons\u00e9quent, les nouveaux MOSFET SiC de 4e g\u00e9n\u00e9ration de ROHM sont capables de fournir une faible r\u00e9sistance \u00e0 l\u2019\u00e9tat passant avec des performances de commutation haute vitesse, contribuant \u00e0 une plus grande miniaturisation et une consommation de courant plus basse dans de nombreuses applications, y compris les onduleurs automobiles et les alimentations de puissance de commutation. Des \u00e9chantillons de puces nues sont disponibles depuis juin 2020, avec des bo\u00eetiers discrets disponibles dans un proche avenir.<\/p>\n

www.rohm.com\/eu<\/a><\/p>\n

Vitesco Technologies et Rohm coop\u00e8rent sur des solutions d\u2019alimentation au carbure de silicium<\/a><\/h3>\n

ROHM pr\u00e9sente des drivers de LED lin\u00e9aires pour feux arri\u00e8res<\/a><\/h3>\n

Circuit de gestion de l\u2019\u00e9nergie optimis\u00e9 pour les processeurs d\u2019applications i.MX 8M Nano<\/a><\/h3>\n","protected":false},"excerpt":{"rendered":"

ROHM annonce la mise en point de la 4\u00e8me g\u00e9n\u00e9ration 1200V SiC MOSFET, optimis\u00e9e pour les groupes motopropulseurs automobiles, y compris l\u2019onduleur d\u2019entra\u00eenement principal, ainsi que pour les alimentations \u00e9lectriques pour les \u00e9quipements industriels.<\/p>\n","protected":false},"author":9,"featured_media":51720,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1141],"class_list":["post-51719","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<\/title>\n<meta name=\"description\" content=\"ROHM annonce la mise en point de la 4\u00e8me g\u00e9n\u00e9ration 1200V SiC MOSFET, optimis\u00e9e pour les groupes motopropulseurs automobiles, y compris l\u2019onduleur...\" \/>\n<meta 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