{"id":490004,"date":"2026-01-08T11:52:57","date_gmt":"2026-01-08T10:52:57","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=490004"},"modified":"2026-01-08T11:52:57","modified_gmt":"2026-01-08T10:52:57","slug":"mosfet-ry7p250bm-de-rohm-pour-les-serveurs-ia-et-les-centres-de-donnees","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-ry7p250bm-de-rohm-pour-les-serveurs-ia-et-les-centres-de-donnees\/","title":{"rendered":"MOSFET RY7P250BM de ROHM pour les serveurs IA et les centres de donn\u00e9es"},"content":{"rendered":"<h3>Mouser Electronics annonce la disponibilit\u00e9 du MOSFET de puissance RY7P250BM de ROHM Semiconductor, con\u00e7u pour les circuits d\u2019\u00e9change \u00e0 chaud dans les syst\u00e8mes d\u2019alimentation 48 V des serveurs IA, centres de donn\u00e9es et applications industrielles.<\/h3>\n<p>Cette robustesse garantit une fiabilit\u00e9 accrue et une r\u00e9duction des pertes de puissance, essentielle pour les syst\u00e8mes IA haute densit\u00e9.<\/p>\n<h4>Caract\u00e9ristiques cl\u00e9s :<\/h4>\n<ul>\n<li>RDS(on) ultra-faible : 1,86 m\u03a9 (VGS=10 V, ID=50 A, Tj=25 \u00b0C), soit 18 % de moins que les MOSFET conventionnels.<\/li>\n<li>Zone de fonctionnement s\u00fbr (SOA) \u00e9tendue pour r\u00e9sister aux tensions \u00e9lev\u00e9es et aux courants d\u2019appel.<\/li>\n<li>Performances stables sous charges lourdes : 16 A pendant 10 ms et 50 A pendant 1 ms.<\/li>\n<li>Compatibilit\u00e9 avec les conceptions existantes, permettant un remplacement direct.<\/li>\n<\/ul>\n<p><a href=\"https:\/\/www.mouser.fr\/\">Mouser Electronics<\/a> | <a href=\"https:\/\/www.rohm.com\/\">ROHM Semiconductor<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Mouser Electronics annonce la disponibilit\u00e9 du MOSFET de puissance RY7P250BM de ROHM Semiconductor, con\u00e7u pour les circuits d\u2019\u00e9change \u00e0 chaud dans les syst\u00e8mes d\u2019alimentation 48 V des serveurs IA, centres de donn\u00e9es et applications industrielles. Cette robustesse garantit une fiabilit\u00e9 accrue et une r\u00e9duction des pertes de puissance, essentielle pour les syst\u00e8mes IA haute densit\u00e9. [&hellip;]<\/p>\n","protected":false},"author":39,"featured_media":490011,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":"","_ppma_block_editor_authors":""},"categories":[881],"tags":[4933,2468,10856],"domains":[47],"ppma_author":[6113],"class_list":["post-490004","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-centre-de-donnees-fr","tag-mosfet-fr","tag-serveurs-ia","domains-electronique-eci"],"acf":[],"yoast_head":"<title>MOSFET RY7P250BM de ROHM pour les serveurs IA et les centres de...<\/title>\n<meta name=\"description\" content=\"Mouser Electronics annonce la disponibilit\u00e9 du MOSFET de puissance RY7P250BM de ROHM Semiconductor, con\u00e7u pour les circuits d\u2019\u00e9change \u00e0 chaud dans les...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" 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