{"id":483957,"date":"2025-08-06T14:00:01","date_gmt":"2025-08-06T12:00:01","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=483957"},"modified":"2025-08-01T17:53:50","modified_gmt":"2025-08-01T15:53:50","slug":"toshiba-lance-des-mosfet-sic-650-v-ultra-compacts-pour-une-densite-de-puissance-accrue-dans-les-systemes-industriels","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/toshiba-lance-des-mosfet-sic-650-v-ultra-compacts-pour-une-densite-de-puissance-accrue-dans-les-systemes-industriels\/","title":{"rendered":"Toshiba lance des MOSFET SiC 650 V ultra-compacts pour une densit\u00e9 de puissance accrue dans les syst\u00e8mes industriels"},"content":{"rendered":"<h3>Toshiba Electronics Europe GmbH annonce la disponibilit\u00e9 en volume de ses nouveaux MOSFET en carbure de silicium (SiC) 650 V de 3e g\u00e9n\u00e9ration, conditionn\u00e9s dans un bo\u00eetier DFN8x8 ultra-compact. Ces composants \u2013 mod\u00e8les TW031V65C, TW054V65C, TW092V65C et TW123V65C \u2013 sont con\u00e7us pour am\u00e9liorer la densit\u00e9 de puissance et l\u2019efficacit\u00e9 \u00e9nerg\u00e9tique dans des applications industrielles exigeantes telles que les SMPS, les bornes de recharge pour VE, les UPS et les onduleurs photovolta\u00efques.<\/h3>\n<p>Leur faible facteur de m\u00e9rite (RDS(ON) x Qgd), associ\u00e9 \u00e0 un coefficient de temp\u00e9rature r\u00e9duit, permet une r\u00e9duction significative des pertes de commutation. Le bo\u00eetier DFN8x8, plus de 90 % plus compact que les bo\u00eetiers traditionnels TO-247, facilite l\u2019assemblage automatis\u00e9 et r\u00e9duit l\u2019imp\u00e9dance parasite.<\/p>\n<p>Gr\u00e2ce \u00e0 une connexion Kelvin d\u00e9di\u00e9e, les performances de commutation sont optimis\u00e9es. Le mod\u00e8le TW054V65C, par exemple, affiche une r\u00e9duction des pertes \u00e0 l\u2019allumage de 55 % et \u00e0 l\u2019extinction de 25 % par rapport aux g\u00e9n\u00e9rations pr\u00e9c\u00e9dentes.<\/p>\n<p><a href=\"https:\/\/toshiba.semicon-storage.com\/eu\/top.html\">Toshiba Electronics Europe GmbH<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Toshiba Electronics Europe GmbH annonce la disponibilit\u00e9 en volume de ses nouveaux MOSFET en carbure de silicium (SiC) 650 V de 3e g\u00e9n\u00e9ration, conditionn\u00e9s dans un bo\u00eetier DFN8x8 ultra-compact. Ces composants \u2013 mod\u00e8les TW031V65C, TW054V65C, TW092V65C et TW123V65C \u2013 sont con\u00e7us pour am\u00e9liorer la densit\u00e9 de puissance et l\u2019efficacit\u00e9 \u00e9nerg\u00e9tique dans des applications industrielles exigeantes [&hellip;]<\/p>\n","protected":false},"author":39,"featured_media":483990,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[7689,2206,2468,4985,2265],"domains":[47],"ppma_author":[6113],"class_list":["post-483957","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-carbure-de-silicium","tag-carbure-de-silicium-sic","tag-mosfet-fr","tag-mosfets-fr","tag-sic-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Toshiba lance des MOSFET SiC 650 V ultra-compacts pour une dens...<\/title>\n<meta name=\"description\" content=\"Toshiba Electronics Europe GmbH 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