{"id":483480,"date":"2025-07-22T07:26:12","date_gmt":"2025-07-22T05:26:12","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=483480"},"modified":"2025-07-22T07:26:12","modified_gmt":"2025-07-22T05:26:12","slug":"lasers-quantum-dots-integres-sur-chiplets-de-silicium","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/lasers-quantum-dots-integres-sur-chiplets-de-silicium\/","title":{"rendered":"Lasers quantum dots int\u00e9gr\u00e9s sur chiplets de silicium"},"content":{"rendered":"<p>Des chercheurs am\u00e9ricains ont r\u00e9ussi \u00e0 int\u00e9grer des lasers quantum dots (QD) \u00e0 l&rsquo;ars\u00e9niure d&rsquo;indium de mani\u00e8re monolithique sur des puces photoniques en silicium.<\/p>\n<p>L&rsquo;int\u00e9gration de lasers dans le silicium est une technique cl\u00e9 pour r\u00e9duire la consommation d&rsquo;\u00e9nergie des puces d&rsquo;intelligence artificielle dans les centres de donn\u00e9es, \u00e0 mesure que les vitesses d&rsquo;interconnexion augmentent. <a href=\"https:\/\/www.eenewseurope.com\/en\/nvidia-looks-to-silicon-photonics-to-cut-datacentre-ai-power\/\">Nvidia<\/a>, par exemple, travaille avec TSMC sur un syst\u00e8me photonique en silicium copackag\u00e9 (CPO) d&rsquo;une performance de 1,6 Tbit\/s bas\u00e9 sur des micro-r\u00e9sonateurs en anneau pour les chiplets.<\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/a-quantum-of-coupling\/\">Un quantum de couplage<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/ceo-interview-celestial-ais-terabit-optical-interconnect\/\">Interconnexion optique t\u00e9rabitaire de Celestial AI<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/3d-photonic-chip-delivers-a-record-114-tbps-optical-bandwidth\/\">Puce photonique 3D avec une bande passante de 114Tbit\/s<\/a><\/li>\n<\/ul>\n<p>Cependant, l&rsquo;int\u00e9gration des lasers constitue un d\u00e9fi majeur car le silicium et les mat\u00e9riaux III-V pr\u00e9sentent des disparit\u00e9s inh\u00e9rentes en termes de constante de r\u00e9seau et de coefficient de dilatation thermique. Celles-ci entra\u00eenent des dislocations qui d\u00e9gradent les performances des composants.<\/p>\n<p>Rosalyn Koscica, de l&rsquo;universit\u00e9 de Californie \u00e0 Santa Barbara, et son \u00e9quipe ont combin\u00e9 trois concepts cl\u00e9s : des poches de silicium en retrait pour la croissance des mat\u00e9riaux III-V, un processus d&rsquo;\u00e9pitaxie en deux \u00e9tapes utilisant \u00e0 la fois le MOCVD et le MBE, et une approche de remplissage de l&rsquo;espace des facettes en polym\u00e8re qui minimise la divergence du faisceau optique dans l&rsquo;espace. Cela permet d&rsquo;int\u00e9grer de mani\u00e8re monolithique des lasers quantum dotd \u00e0 l&rsquo;ars\u00e9niure d&rsquo;indium (InAs) sur des chiplets photoniques en silicium. Ces lasers quantum dots utilisant la bande O pr\u00e9sentent une dispersion moindre que d&rsquo;autres types de lasers tels que les VCSEL, ainsi qu&rsquo;une plus grande stabilit\u00e9 thermique.<\/p>\n<p>\u00ab\u00a0Nos lasers QD int\u00e9gr\u00e9s ont d\u00e9montr\u00e9 un fonctionnement \u00e0 haute temp\u00e9rature jusqu&rsquo;\u00e0 105 \u00b0C et une dur\u00e9e de vie de 6,2 ans \u00e0 une temp\u00e9rature de 35 \u00b0C\u00a0\u00bb, explique le Dr Koscica.<\/p>\n<h4>Plaquettes SOI de 300 mm<\/h4>\n<p>Le processus peut \u00eatre appliqu\u00e9 dans une ligne CMOS de silicium sur isolant (SOI) sur des plaquettes de 300 mm pour plus d&rsquo;efficacit\u00e9. Les premiers composants photoniques au silicium sont fabriqu\u00e9s sur une tranche de silicium sur isolant (SOI) de 300 mm dans la fonderie d&rsquo;AIM Photonics.<\/p>\n<p>Le processus de 300 mm cr\u00e9e des composants photoniques en silicium int\u00e9gr\u00e9s dans une couche de rev\u00eatement de SiO2 de 4 \u03bcm qui couvre l&rsquo;ensemble de la plaquette avec des anneaux de micror\u00e9sonateurs en silicium trait\u00e9s en fonderie et des guides d&rsquo;ondes en nitrure de silicium (SiN). Environ 5 % de la surface de SiO2 est lithographi\u00e9e et grav\u00e9e pour ouvrir des poches rectangulaires avec une base de Si en retrait pour la croissance \u00e9pitaxiale de III-V.<\/p>\n<p>La profondeur de l&rsquo;\u00e9videment Si est con\u00e7ue compte tenu de l&#8217;empilement \u00e9pi pr\u00e9vu pour un alignement optimal entre les modes optiques du laser et du coupleur d&rsquo;entr\u00e9e du guide d&rsquo;ondes. Les poches mesurent 50 \u03bcm par 4 \u03bcm pour maximiser les performances du composant tout en conservant l&#8217;empreinte \u00e9troite requise pour l&rsquo;int\u00e9gration \u00e0 haute densit\u00e9.<\/p>\n<p>Lors des essais, les chiplets dot\u00e9s de lasers int\u00e9gr\u00e9s de mani\u00e8re monolithique ont montr\u00e9 une perte de couplage suffisamment faible, fonctionnant efficacement sur une seule longueur d&rsquo;onde en bande O au sein des chiplets. La longueur d&rsquo;onde de la bande O est souhaitable car elle permet la transmission de signaux dans des dispositifs photoniques \u00e0 faible dispersion. Les lasers \u00e0 fr\u00e9quence unique sont r\u00e9alis\u00e9s \u00e0 l&rsquo;aide de r\u00e9sonateurs annulaires en silicium ou de r\u00e9flecteurs de Bragg distribu\u00e9s en nitrure de silicium.<\/p>\n<p>La technique d&rsquo;int\u00e9gration propos\u00e9e peut \u00eatre appliqu\u00e9e \u00e0 une vari\u00e9t\u00e9 de circuits int\u00e9gr\u00e9s photoniques.<\/p>\n<p><a href=\"https:\/\/ieeexplore.ieee.org\/document\/10944565\">10.1109\/JLT.2025.3555555<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Des chercheurs am\u00e9ricains ont r\u00e9ussi \u00e0 int\u00e9grer des lasers quantum dots (QD) \u00e0 l&rsquo;ars\u00e9niure d&rsquo;indium de mani\u00e8re monolithique sur des puces photoniques en silicium. L&rsquo;int\u00e9gration de lasers dans le silicium est une technique cl\u00e9 pour r\u00e9duire la consommation d&rsquo;\u00e9nergie des puces d&rsquo;intelligence artificielle dans les centres de donn\u00e9es, \u00e0 mesure que les vitesses d&rsquo;interconnexion augmentent. [&hellip;]<\/p>\n","protected":false},"author":40,"featured_media":483453,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[883],"tags":[7838,10230],"domains":[47],"ppma_author":[3640,6199],"class_list":["post-483480","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-technologies","tag-circuits-integres-photoniques","tag-laser-qd","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Lasers quantum dots int\u00e9gr\u00e9s sur chiplets de silicium ...<\/title>\n<meta name=\"description\" content=\"Des chercheurs US ont int\u00e9gr\u00e9 des lasers Quantum Dot(QD) \u00e0 l&#039;ars\u00e9niure d&#039;indium de mani\u00e8re sur des puces photoniques en silicium\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" 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