{"id":480776,"date":"2025-05-30T09:00:14","date_gmt":"2025-05-30T07:00:14","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=480776"},"modified":"2025-05-29T21:12:52","modified_gmt":"2025-05-29T19:12:52","slug":"transistors-hemt-gan-rad-hard-pour-conceptions-spatiales","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/transistors-hemt-gan-rad-hard-pour-conceptions-spatiales\/","title":{"rendered":"Transistors HEMT GaN Rad-Hard pour conceptions spatiales"},"content":{"rendered":"<p>Infineon Technologies a lanc\u00e9 une famille de transistors en nitrure de gallium (GaN) r\u00e9sistants aux radiations, fabriqu\u00e9s en interne dans sa propre fonderie.<\/p>\n<p>Les transistors GaN \u00e0 haute mobilit\u00e9 d&rsquo;\u00e9lectrons (HEMT) sont bas\u00e9s sur la technologie CoolGaN d&rsquo;Infineon et sont certifi\u00e9s pour leur fiabilit\u00e9 par l&rsquo;Agence logistique de la d\u00e9fense des \u00c9tats-Unis (DLA) selon la sp\u00e9cification MIL-PRF-19500\/794 de l&rsquo;Arm\u00e9e de terre, de la Marine et de l&rsquo;Espace (JANS).<\/p>\n<p>Ces composants peuvent \u00eatre utilis\u00e9s pour les satellites en orbite, l&rsquo;exploration spatiale habit\u00e9e et les sondes de l&rsquo;espace lointain, et s&rsquo;ajoutent \u00e0 la gamme de MOSFET en silicium durci aux radiations. Infineon r\u00e9alise \u00e9galement plusieurs lots avant le lancement complet de la production JANS afin de garantir la fiabilit\u00e9 de la fabrication \u00e0 long terme.<\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/infineon-launches-its-first-p-channel-mosfet-for-space\/\">Premier MOSFET \u00e0 canal p dur pour l&rsquo;espace<\/a><\/li>\n<\/ul>\n<p>\u00ab\u00a0L&rsquo;\u00e9quipe d&rsquo;Infineon continue de repousser les limites de la conception de puissance avec notre nouvelle gamme de transistors GaN\u00a0\u00bb, a d\u00e9clar\u00e9 Chris Opoczynski, Senior Vice President et General Manager HiRel, chez Infineon. \u00ab\u00a0Cette \u00e9tape importante apporte la prochaine g\u00e9n\u00e9ration de solutions d&rsquo;alimentation \u00e0 haute fiabilit\u00e9 pour les applications critiques de la d\u00e9fense et de l&rsquo;espace qui utilisent les propri\u00e9t\u00e9s mat\u00e9rielles sup\u00e9rieures des semi-conducteurs \u00e0 large bande interdite pour les clients desservant le march\u00e9 a\u00e9rospatial en pleine croissance.\u00a0\u00bb<\/p>\n<p>Les trois premi\u00e8res variantes de produits de la nouvelle gamme de transistors GaN durcis aux radiations sont des composants de 100 V, 52 A pr\u00e9sentant une r\u00e9sistance RDSon (r\u00e9sistance de drain source on) de 4 m\u03a9 (typique) et une charge de grille totale (Qg) de 8,8 nC (typique), les meilleures de l&rsquo;industrie. Packag\u00e9s dans de robustes bo\u00eetiers c\u00e9ramiques herm\u00e9tiques pour montage en surface, les transistors sont durcis par effet d&rsquo;\u00e9v\u00e9nement unique (SEE) jusqu&rsquo;\u00e0 LET (GaN) = 70 MeV.cm2\/mg (ion Au). Deux composants, qui ne sont pas certifi\u00e9s JANS, sont tri\u00e9s sous une dose ionisante totale (DIT) de 100 krad et 500 krad. Le troisi\u00e8me composant, contr\u00f4l\u00e9 \u00e0 une DIT de 500 krads, est qualifi\u00e9 selon la sp\u00e9cification rigoureuse de la JANS MIL-PRF-19500\/794.<\/p>\n<p>Infineon est la premi\u00e8re entreprise du secteur \u00e0 obtenir la certification DLA JANS pour des composants de puissance GaN enti\u00e8rement fabriqu\u00e9s en interne. La certification DLA JANS exige des niveaux rigoureux de contr\u00f4le et des identifiants de classe de qualit\u00e9 de service pour garantir les performances, la qualit\u00e9 et la fiabilit\u00e9 requises pour les applications de vol spatial.<\/p>\n<p>Des \u00e9chantillons d&rsquo;ing\u00e9nierie et des cartes d&rsquo;\u00e9valuation sont disponibles imm\u00e9diatement, le composant JANS final \u00e9tant commercialis\u00e9 au cours de l&rsquo;\u00e9t\u00e9 2025. D&rsquo;autres composants certifi\u00e9s JANS seront bient\u00f4t lanc\u00e9s, augmentant les tensions et les courants disponibles pour offrir aux clients une plus grande flexibilit\u00e9 dans la cr\u00e9ation de conceptions efficaces et fiables.<\/p>\n<p><a href=\"https:\/\/www.infineon.com\/cms\/en\/product\/promopages\/radhardGaN\/?redirId=306425\">www.infineon.com\/radhardgan<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Infineon Technologies a lanc\u00e9 une famille de transistors en nitrure de gallium (GaN) r\u00e9sistants aux radiations, fabriqu\u00e9s en interne dans sa propre fonderie. Les transistors GaN \u00e0 haute mobilit\u00e9 d&rsquo;\u00e9lectrons (HEMT) sont bas\u00e9s sur la technologie CoolGaN d&rsquo;Infineon et sont certifi\u00e9s pour leur fiabilit\u00e9 par l&rsquo;Agence logistique de la d\u00e9fense des \u00c9tats-Unis (DLA) selon la [&hellip;]<\/p>\n","protected":false},"author":40,"featured_media":480734,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[1363,3897,9859],"domains":[47],"ppma_author":[3640,6199],"class_list":["post-480776","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-espace","tag-gan-fr-2","tag-rad-hard-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Transistors HEMT GaN Rad-Hard pour conceptions spatiales ...<\/title>\n<meta name=\"description\" content=\"Infineon Technologies a lanc\u00e9 une famille de transistors GaN 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