{"id":478979,"date":"2025-05-05T01:00:21","date_gmt":"2025-05-04T23:00:21","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=478979"},"modified":"2025-05-04T19:17:15","modified_gmt":"2025-05-04T17:17:15","slug":"mosfet-sic-1200v-pour-les-conceptions-ai-a-haute-puissance","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-sic-1200v-pour-les-conceptions-ai-a-haute-puissance\/","title":{"rendered":"MOSFET SiC 1200V pour les conceptions AI \u00e0 haute puissance"},"content":{"rendered":"<h3><span style=\"font-size: 16px;\">Alpha and Omega Semiconductor (AOS) a d\u00e9velopp\u00e9 une s\u00e9rie de MOSFET en carbure de silicium (SiC) de 1200V pour les alimentations des centres de donn\u00e9es et les chargeurs embarqu\u00e9s des v\u00e9hicules \u00e9lectriques.<\/span><\/h3>\n<p>La technologie \u03b1SiC de troisi\u00e8me g\u00e9n\u00e9ration permet d&rsquo;am\u00e9liorer jusqu&rsquo;\u00e0 30 % la \u00ab\u00a0switching figure-of-merit (FOM)\u00a0\u00bb par rapport \u00e0 la g\u00e9n\u00e9ration pr\u00e9c\u00e9dente, tout en maintenant de faibles pertes de conduction dans des conditions de charge \u00e9lev\u00e9e. Les MOSFETs Gen3 sont enti\u00e8rement qualifi\u00e9s AEC-Q101, avec une dur\u00e9e de vie \u00e9tendue et des capacit\u00e9s HV-H3TRB, ainsi qu&rsquo;une large compatibilit\u00e9 des tensions de commande de grille de +15V \u00e0 +18V.<\/p>\n<p>Alors que la consommation d&rsquo;\u00e9nergie augmente dans les v\u00e9hicules \u00e9lectriques, les centres de donn\u00e9es informatiques et les syst\u00e8mes d&rsquo;\u00e9nergie renouvelable, les performances insuffisantes des \u00e9tapes de conversion de l&rsquo;\u00e9nergie peuvent peser lourdement sur les syst\u00e8mes d&rsquo;alimentation \u00e9lectrique et de refroidissement. Les applications vis\u00e9es comprennent les entra\u00eenements de moteurs industriels, les onduleurs solaires, les SMPS de grande puissance et les \u00e9quipements de charge des v\u00e9hicules \u00e9lectriques.<\/p>\n<p><strong>R\u00e9duction des pertes dans les centres de donn\u00e9es<\/strong><\/p>\n<p>Les futurs centres de donn\u00e9es IA adoptant des architectures \u00e0 haute tension 800V ou \u00b1400V b\u00e9n\u00e9ficieront d&rsquo;une r\u00e9duction des pertes et d&rsquo;une augmentation de la densit\u00e9 de puissance pour r\u00e9pondre aux exigences croissantes en mati\u00e8re d&rsquo;alimentation. Pour prendre en charge ces tensions syst\u00e8me plus \u00e9lev\u00e9es, les dispositifs Gen3 1200V d&rsquo;AOS seront essentiels pour permettre de nouvelles topologies.<\/p>\n<p>Les MOSFETs AOS Gen3 1200V sont disponibles avec une r\u00e9sistance \u00e0 l&rsquo;enclenchement allant de 15mOhm pour l&rsquo;AOM015V120X3Q \u00e0 40mOhm pour l&rsquo;AOM040V120X3Q dans un bo\u00eetier TO27-4L. AOS pr\u00e9voit de d\u00e9ployer ses MOSFETs Gen3 dans d&rsquo;autres bo\u00eetiers mont\u00e9s en surface et refroidis par le haut, ainsi que dans des modules de bo\u00eetiers.<\/p>\n<p><strong>Des avanc\u00e9es dans l&rsquo;automobile<\/strong><\/p>\n<p>Pour les conceptions de v\u00e9hicules \u00e9lectriques, les MOSFET de la s\u00e9rie Q permettent aux ing\u00e9nieurs de cr\u00e9er des syst\u00e8mes \u00e0 densit\u00e9 de puissance plus \u00e9lev\u00e9e avec un meilleur rendement, r\u00e9duisant ainsi la consommation des batteries et augmentant l&rsquo;autonomie des v\u00e9hicules. AOS a qualifi\u00e9 une puce MOSFET Gen3 1200V\/11mOhm con\u00e7ue pour les modules d&rsquo;onduleurs de traction haute puissance des v\u00e9hicules \u00e9lectriques et est disponible pour la vente de plaquettes de silicium.<\/p>\n<p><a href=\"http:\/\/www.aosmd.com\">www.aosmd.com<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Alpha and Omega Semiconductor (AOS) a d\u00e9velopp\u00e9 une s\u00e9rie de MOSFET en carbure de silicium (SiC) de 1200V pour les alimentations des centres de donn\u00e9es et les chargeurs embarqu\u00e9s des v\u00e9hicules \u00e9lectriques. La technologie \u03b1SiC de troisi\u00e8me g\u00e9n\u00e9ration permet d&rsquo;am\u00e9liorer jusqu&rsquo;\u00e0 30 % la \u00ab\u00a0switching figure-of-merit (FOM)\u00a0\u00bb par rapport \u00e0 la g\u00e9n\u00e9ration pr\u00e9c\u00e9dente, tout en [&hellip;]<\/p>\n","protected":false},"author":11,"featured_media":478945,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[1640,4374],"domains":[47],"ppma_author":[3640,1143],"class_list":["post-478979","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-automobile","tag-gestion-de-puissance","domains-electronique-eci"],"acf":[],"yoast_head":"<title>MOSFET SiC 1200V pour les conceptions AI \u00e0 haute puissance ...<\/title>\n<meta name=\"description\" content=\"MOSFET en carbure de silicium (SiC) de 1200V pour les alimentations \u00e9lectriques\" 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