{"id":478158,"date":"2025-04-22T09:33:55","date_gmt":"2025-04-22T07:33:55","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=478158"},"modified":"2025-04-22T09:33:55","modified_gmt":"2025-04-22T07:33:55","slug":"la-memoire-non-volatile-2d-peut-elle-remplacer-la-sram","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/la-memoire-non-volatile-2d-peut-elle-remplacer-la-sram\/","title":{"rendered":"La m\u00e9moire non volatile 2D peut-elle remplacer la SRAM ?"},"content":{"rendered":"<p>Des chercheurs chinois ont mis au point une m\u00e9moire flash non volatile capable d&rsquo;\u00e9crire en seulement 400 ps soit nettement moins que la m\u00e9moire SRAM \u00e0 haute vitesse actuelle. Mais cette m\u00e9moire peut-elle rivaliser avec la SRAM dans les puces int\u00e9gr\u00e9es ?<\/p>\n<p>La cellule de m\u00e9moire mise au point \u00e0 l&rsquo;universit\u00e9 Fudan de Shanghai utilise une structure 2D avec un canal en graph\u00e8ne ou un canal en dis\u00e9l\u00e9niure de tungst\u00e8ne avec une technique d&rsquo;injection \u00e0 chaud.<\/p>\n<p>L&rsquo;une des principales questions que soul\u00e8ve l&rsquo;utilisation d&rsquo;une telle structure pour la m\u00e9moire est celle de l&rsquo;endurance, en particulier avec des couches d&rsquo;un atome d&rsquo;\u00e9paisseur. L&rsquo;\u00e9quipe de Fudan fait \u00e9tat d&rsquo;une endurance robuste de 5,5 millions de cycles, ce qui est nettement sup\u00e9rieur \u00e0 la m\u00e9moire flash non volatile \u00e0 base de silicium. Toutefois, ce chiffre est nettement inf\u00e9rieur \u00e0 celui des cellules SRAM, qui sont g\u00e9n\u00e9ralement constitu\u00e9es de six transistors. En comparaison, les m\u00e9moires FRAM ferro\u00e9lectriques int\u00e9gr\u00e9es actuelles ont une endurance de<sup>1015<\/sup> cycles.<\/p>\n<p>L&rsquo;extrapolation des donn\u00e9es indique \u00e9galement une dur\u00e9e de stockage de plus de 10 ans pour la m\u00e9moire non volatile.<\/p>\n<p>Il ne s&rsquo;agit pas d&rsquo;une recherche isol\u00e9e. Une \u00e9quipe du d\u00e9partement de science des mat\u00e9riaux et de m\u00e9tallurgie de l&rsquo;universit\u00e9 de Cambridge collabore avec Paragraf, pionnier du graph\u00e8ne, pour mettre au point des proc\u00e9d\u00e9s de d\u00e9p\u00f4t de mat\u00e9riaux ferro\u00e9lectriques sur le graph\u00e8ne afin de produire de nouveaux dispositifs de m\u00e9moire. Cela pourrait r\u00e9duire la consommation d&rsquo;\u00e9nergie d&rsquo;un facteur 10 par rapport \u00e0 la technologie actuelle des dispositifs de m\u00e9moire.<\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/paragraf-funded-to-develop-graphene-ferroelectric-memory\/\">Paragraf re\u00e7oit un financement pour d\u00e9velopper une m\u00e9moire ferro\u00e9lectrique au graph\u00e8ne<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/graphene-analog-non-volatile-memory-aids-ai\/\">M\u00e9moire non volatile en graph\u00e8ne pour l&rsquo;intelligence artificielle<\/a><\/li>\n<\/ul>\n<p>La m\u00e9moire flash \u00e0 canal de Dirac graph\u00e8ne 2D est bas\u00e9e sur un m\u00e9canisme am\u00e9lior\u00e9 d&rsquo;injection de porteurs chauds sur une pile de m\u00e9moire en nitrure de bore hBN\/HfO2\/Al2O3. Ce m\u00e9canisme prend en charge l&rsquo;injection d&rsquo;\u00e9lectrons et de trous pour atteindre une vitesse de 400 pico-secondes avec une tension de programmation de 5 V. Cette vitesse est sup\u00e9rieure \u00e0 celle d&rsquo;une cellule SRAM. C&rsquo;est plus rapide qu&rsquo;une cellule SRAM avec la m\u00eame longueur de canal et cela \u00e9vite le besoin d&rsquo;une pompe de charge pour la programmation qui est n\u00e9cessaire dans une m\u00e9moire flash en silicium.<\/p>\n<p>En combinant la structure de bande de Dirac bidimensionnelle et les caract\u00e9ristiques de transport balistique, et en modulant la longueur gaussienne du canal bidimensionnel, les chercheurs ont r\u00e9alis\u00e9 la super-injection de la charge du canal dans la couche de stockage.<\/p>\n<p>\u00ab\u00a0Le comportement d&rsquo;injection traditionnel a un point extr\u00eame d&rsquo;injection, alors que la super-injection est une injection infinie. Le m\u00e9canisme de super-injection 2D a pouss\u00e9 la vitesse de la m\u00e9moire non volatile jusqu&rsquo;\u00e0 sa limite th\u00e9orique, red\u00e9finissant ainsi les fronti\u00e8res des technologies de stockage existantes\u00a0\u00bb, a d\u00e9clar\u00e9 Liu Chunsen, un autre chercheur de l&rsquo;\u00e9quipe.<\/p>\n<p>La prochaine \u00e9tape consistera \u00e0 r\u00e9duire la longueur du canal de graph\u00e8ne de 200 nm, ce qui permettra d&rsquo;obtenir des vitesses d&rsquo;\u00e9criture encore plus rapides. L&rsquo;am\u00e9lioration de l&rsquo;endurance serait \u00e9galement une \u00e9tape cl\u00e9 pour l&rsquo;utilisation de la technologie dans les puces int\u00e9gr\u00e9es.<\/p>\n<p><a href=\"http:\/\/www.fudan..edu.cn\">www.fudan.edu.cn<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Des chercheurs chinois ont mis au point une m\u00e9moire flash non volatile capable d&rsquo;\u00e9crire en seulement 400 ps soit nettement moins que la m\u00e9moire SRAM \u00e0 haute vitesse actuelle. Mais cette m\u00e9moire peut-elle rivaliser avec la SRAM dans les puces int\u00e9gr\u00e9es ? La cellule de m\u00e9moire mise au point \u00e0 l&rsquo;universit\u00e9 Fudan de Shanghai utilise [&hellip;]<\/p>\n","protected":false},"author":40,"featured_media":478116,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[883],"tags":[7330,9580],"domains":[47],"ppma_author":[3640,6199],"class_list":["post-478158","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-technologies","tag-memoire-non-volatile","tag-sram-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>La m\u00e9moire non volatile 2D peut-elle remplacer la SRAM ? ...<\/title>\n<meta name=\"description\" content=\"Des chercheurs chinois ont mis au point une m\u00e9moire flash non volatile capable d&#039;\u00e9crire en seulement 400 ps, soit moins que la SRAM.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/478158\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"La m\u00e9moire non volatile 2D peut-elle remplacer la SRAM ?\" \/>\n<meta property=\"og:description\" content=\"Des chercheurs chinois ont mis au point une m\u00e9moire flash non volatile capable d&#039;\u00e9crire en seulement 400 ps, soit moins que la SRAM.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/478158\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2025-04-22T07:33:55+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/test.ecinews.fr\/wp-content\/uploads\/2025\/04\/2D-NVM.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"664\" \/>\n\t<meta property=\"og:image:height\" content=\"476\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Nick Flaherty, A Delapalisse\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"A Delapalisse\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"3 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/test.ecinews.fr\/fr\/la-memoire-non-volatile-2d-peut-elle-remplacer-la-sram\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/test.ecinews.fr\/fr\/la-memoire-non-volatile-2d-peut-elle-remplacer-la-sram\/\"},\"author\":{\"name\":\"A Delapalisse\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/4b3db5ba5c953c5fddeb226df86d8635\"},\"headline\":\"La m\u00e9moire non volatile 2D peut-elle remplacer la SRAM ?\",\"datePublished\":\"2025-04-22T07:33:55+00:00\",\"dateModified\":\"2025-04-22T07:33:55+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/test.ecinews.fr\/fr\/la-memoire-non-volatile-2d-peut-elle-remplacer-la-sram\/\"},\"wordCount\":602,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"keywords\":[\"M\u00e9moire non volatile\",\"SRAM\"],\"articleSection\":[\"Technologies\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/test.ecinews.fr\/fr\/la-memoire-non-volatile-2d-peut-elle-remplacer-la-sram\/\",\"url\":\"https:\/\/test.ecinews.fr\/fr\/la-memoire-non-volatile-2d-peut-elle-remplacer-la-sram\/\",\"name\":\"La m\u00e9moire non volatile 2D peut-elle remplacer la SRAM ? 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