{"id":477371,"date":"2025-04-10T11:10:05","date_gmt":"2025-04-10T09:10:05","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=477371"},"modified":"2025-04-10T11:10:05","modified_gmt":"2025-04-10T09:10:05","slug":"iqe-et-x-fab-sassocient-pour-les-composants-gan-1200v","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/iqe-et-x-fab-sassocient-pour-les-composants-gan-1200v\/","title":{"rendered":"IQE et X-fab s&rsquo;associent pour les composants GaN 1200V"},"content":{"rendered":"<p>La fonderie belge X-fab collabore avec le fournisseur de substrats IQE pour d\u00e9velopper une cha\u00eene d&rsquo;approvisionnement europ\u00e9enne pour les dispositifs de puissance en nitrure de gallium (GaN) jusqu&rsquo;\u00e0 1200V.<\/p>\n<p>Les deux entreprises ont sign\u00e9 un accord de d\u00e9veloppement conjoint (JDA) de deux ans pour cr\u00e9er une plateforme GaN bas\u00e9e en Europe, en commen\u00e7ant par des composants de 650V. Cette plateforme utilisera l&rsquo;expertise d&rsquo;IQE en mati\u00e8re de conception et de processus d&rsquo;\u00e9pitaxie GaN, qui fournit d\u00e9j\u00e0 les d\u00e9veloppeurs GaN. Les composants peuvent \u00eatre fabriqu\u00e9s chez X-fab pour les applications automobiles, les centres de donn\u00e9es et les applications grand public.<\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/iqe-interview-the-geopolitics-of-gan\/\">La g\u00e9opolitique du GaN<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/iqe-looks-to-us-eu-chips-act-for-gan-expansion\/\">IQE se tourne vers les \u00c9tats-Unis et l&rsquo;Union europ\u00e9enne pour se d\u00e9velopper dans le domaine du GaN<\/a><\/li>\n<\/ul>\n<p>X-fab fournit d\u00e9j\u00e0 des composants GaN \u00e0 mode de d\u00e9pl\u00e9tion (mode D) et HEMT de 650 V sur des plaquettes de 200 mm dans son usine de Dresde, en Allemagne. Elle prend en charge le process du client ou les blocs de process standard pour les \u00e9tapes du process, et inclut des technologies de traitement suppl\u00e9mentaires telles que l&rsquo;impression par microtransfert (\u00b5TP), la couche de redistribution du cuivre , les couches m\u00e9talliques \u00e9paisses et l&rsquo;amincissement de la plaquette.<\/p>\n<p>L&rsquo;accord avec IQE servira \u00e9galement de base au d\u00e9veloppement de produits futurs, au-del\u00e0 de 650V. On s&rsquo;attend \u00e0 ce qu&rsquo;il vise des dispositifs de 1200V qui serviront \u00e0 la conception de v\u00e9hicules \u00e9lectriques de 800V.<\/p>\n<p>\u00ab\u00a0En combinant notre expertise de longue date en mati\u00e8re de fabrication de dispositifs GaN et de conception avec le leadership d&rsquo;IQE en mati\u00e8re d&rsquo;\u00e9pitaxie, nous cr\u00e9ons une plateforme GaN Power unique et cl\u00e9 en main\u00a0\u00bb, a d\u00e9clar\u00e9 J\u00f6rg Doblaski, directeur de la technologie chez X-Fab. \u00ab\u00a0En plus de notre technologie GaN existante, cette collaboration offre une alternative convaincante aux mod\u00e8les de cha\u00eene d&rsquo;approvisionnement existants et renforce la position de l&rsquo;Europe dans le domaine de la technologie des semi-conducteurs de puissance de la prochaine g\u00e9n\u00e9ration.\u00a0\u00bb<\/p>\n<p>La production de GaN est d\u00e9j\u00e0 importante en Europe. Nexperia a <a href=\"https:\/\/www.eenewseurope.com\/en\/200m-for-200mm-gan-and-sic-in-hamburg\/\">modernis\u00e9 son usine de Hambourg, en Allemagne,<\/a> avec des r\u00e9acteurs de wafers de 200 mm pour fournir du GaN en Europe et Infineon Technologies est \u00e9galement un fournisseur majeur de GaN \u00e0 partir de ses usines europ\u00e9ennes, y compris des <a href=\"https:\/\/www.eenewseurope.com\/en\/infineon-shows-its-first-300m-gan-wafer\/\">plaquettes de 300 mm \u00e0 Villach, en Autriche<\/a>.<\/p>\n<p>\u00ab\u00a0S&rsquo;appuyant sur notre expertise en \u00e9pitaxie GaN et sur notre r\u00e9cent investissement dans une capacit\u00e9 de r\u00e9acteur GaN suppl\u00e9mentaire, cet accord s&rsquo;inscrit dans notre strat\u00e9gie de diversification GaN, \u00e9largit notre client\u00e8le et acc\u00e9l\u00e8re la mise sur le march\u00e9 des applications GaN Power\u00a0\u00bb, a d\u00e9clar\u00e9 Jutta Meier, directrice g\u00e9n\u00e9rale et directrice financi\u00e8re par int\u00e9rim d&rsquo;IQE apr\u00e8s le <a href=\"https:\/\/www.eenewseurope.com\/en\/iqes-ceo-departs-amidst-c-level-shuffle\/\">d\u00e9part d&rsquo;Americo Lemos en octobre dernier.<\/a><\/p>\n<p>www.iqep.com <a href=\"http:\/\/www.iqep.com\">;<\/a> <a href=\"http:\/\/www.xfab.com\">www.xfab.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>La fonderie belge X-fab collabore avec le fournisseur de substrats IQE pour d\u00e9velopper une cha\u00eene d&rsquo;approvisionnement europ\u00e9enne pour les dispositifs de puissance en nitrure de gallium (GaN) jusqu&rsquo;\u00e0 1200V. Les deux entreprises ont sign\u00e9 un accord de d\u00e9veloppement conjoint (JDA) de deux ans pour cr\u00e9er une plateforme GaN bas\u00e9e en Europe, en commen\u00e7ant par des [&hellip;]<\/p>\n","protected":false},"author":40,"featured_media":477360,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[880],"tags":[3897,9455,5543],"domains":[47],"ppma_author":[3640,6199],"class_list":["post-477371","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites-economiques","tag-gan-fr-2","tag-iqe-fr","tag-x-fab","domains-electronique-eci"],"acf":[],"yoast_head":"<title>IQE et X-fab s&#039;associent pour les composants GaN 1200V ...<\/title>\n<meta name=\"description\" content=\"X-fab travaille avec IQE pour d\u00e9velopper une cha\u00eene d&#039;approvisionnement europ\u00e9enne pour les composants GaN jusqu&#039;\u00e0 1200V.\" \/>\n<meta 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