{"id":476359,"date":"2025-03-27T20:16:44","date_gmt":"2025-03-27T19:16:44","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=476359"},"modified":"2025-03-27T20:16:44","modified_gmt":"2025-03-27T19:16:44","slug":"un-mosfet-de-puissance-de-650v-se-divise-en-deux-en-fonction-de-la-resistance","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/un-mosfet-de-puissance-de-650v-se-divise-en-deux-en-fonction-de-la-resistance\/","title":{"rendered":"Un MOSFET de puissance de 650V se divise en deux en fonction de la r\u00e9sistance"},"content":{"rendered":"<h3><span style=\"font-size: 16px;\">Vishay Intertechnology a r\u00e9duit de moiti\u00e9 la r\u00e9sistance d&rsquo;enclenchement de son MOSFET de puissance \u00e0 superjonction de 650 V de quatri\u00e8me g\u00e9n\u00e9ration pour les applications de t\u00e9l\u00e9communication, industrielles et informatiques.<\/span><\/h3>\n<p>Par rapport aux dispositifs de la g\u00e9n\u00e9ration pr\u00e9c\u00e9dente, le SiHK050N65E \u00e0 canal n de Vishay Siliconix r\u00e9duit la r\u00e9sistance \u00e0 l&rsquo;enclenchement de 48,2 % \u00e0 0,048 \u03a9 \u00e0 10 V, tout en offrant une r\u00e9sistance inf\u00e9rieure de 65,4 % par rapport \u00e0 la charge de grille, un chiffre cl\u00e9 de m\u00e9rite (FOM) pour les MOSFET de 650 V utilis\u00e9s dans les applications de conversion d&rsquo;\u00e9nergie.<\/p>\n<p>Avec le SiHK050N65E et les autres composants de la famille Gen 4.5 650 V E Series, la soci\u00e9t\u00e9 r\u00e9pond aux besoins d&rsquo;am\u00e9lioration de l&rsquo;efficacit\u00e9 et de la densit\u00e9 de puissance dans deux des premi\u00e8res \u00e9tapes de l&rsquo;architecture du syst\u00e8me d&rsquo;alimentation &#8211; la correction du facteur de puissance (PFC) et les blocs convertisseurs DC-DC ult\u00e9rieurs.<\/p>\n<p><strong>Une grande vari\u00e9t\u00e9 d&rsquo;applications<\/strong><\/p>\n<p>Les applications typiques comprennent les serveurs, l&rsquo;informatique de pointe et les superordinateurs, les onduleurs, les lampes \u00e0 d\u00e9charge \u00e0 haute intensit\u00e9 (HID) et les ballasts d&rsquo;\u00e9clairage fluorescent, les SMPS de t\u00e9l\u00e9communications, les onduleurs solaires, les \u00e9quipements de soudage, le chauffage par induction, les entra\u00eenements de moteur et les chargeurs de batterie.<\/p>\n<p>La technologie de superjonction de la s\u00e9rie E produit une r\u00e9sistance typique de 0,048 \u03a9 \u00e0 10 V pour une puissance nominale plus \u00e9lev\u00e9e pour les applications de plus de 6 kW. Avec 50 V de tension de claquage suppl\u00e9mentaire, le dispositif 650 V r\u00e9pond aux tensions d&rsquo;entr\u00e9e de 200 VAC \u00e0 277 VAC et aux normes Open Rack V3 (ORV3) de l&rsquo;Open Compute Project.<\/p>\n<p>En outre, le MOSFET offre une charge de grille inf\u00e9rieure \u00e0 78 nC pour un FOM r\u00e9sultant de 3,74 \u03a9*nC. Cela se traduit par une r\u00e9duction des pertes de conduction et de commutation afin d&rsquo;\u00e9conomiser de l&rsquo;\u00e9nergie et d&rsquo;augmenter l&rsquo;efficacit\u00e9 pour r\u00e9pondre aux exigences d&rsquo;efficacit\u00e9 du titane dans les alimentations de serveurs ou pour atteindre une efficacit\u00e9 de pointe de 96 %.<\/p>\n<p>Pour am\u00e9liorer les performances de commutation dans les topologies \u00e0 commutation dure telles que les conceptions PFC et \u00e0 deux commutateurs, le MOSFET pr\u00e9sent\u00e9 aujourd&rsquo;hui offre de faibles capacit\u00e9s de sortie effectives typiques<sub>Co(er)<\/sub> et<sub>Co(tr)<\/sub> de 167 pF et 1119 pF, respectivement. La r\u00e9sistance r\u00e9sultante du dispositif multipli\u00e9e par<sub>Co(er) <\/sub>FOM est de 8,0 \u03a9*pF, ce qui est tr\u00e8s bas dans l&rsquo;industrie.<\/p>\n<p>Le SiHK050N65E est disponible en bo\u00eetier PowerPAK10 x 12 avec une connexion Kelvin pour r\u00e9duire le bruit de grille et augmenter la robustesse dv\/dt. Conforme \u00e0 la directive RoHS et sans halog\u00e8ne, le MOSFET est con\u00e7u pour r\u00e9sister aux transitoires de surtension en mode avalanche avec des limites garanties par un test UIS \u00e0 100 %.<\/p>\n<p>Des \u00e9chantillons et des quantit\u00e9s de production du SiHK050N65E sont disponibles d\u00e8s \u00e0 pr\u00e9sent<\/p>\n<p><a href=\"http:\/\/www.vishay.com\/\">www.vishay.com<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Vishay Intertechnology a r\u00e9duit de moiti\u00e9 la r\u00e9sistance d&rsquo;enclenchement de son MOSFET de puissance \u00e0 superjonction de 650 V de quatri\u00e8me g\u00e9n\u00e9ration pour les applications de t\u00e9l\u00e9communication, industrielles et informatiques. Par rapport aux dispositifs de la g\u00e9n\u00e9ration pr\u00e9c\u00e9dente, le SiHK050N65E \u00e0 canal n de Vishay Siliconix r\u00e9duit la r\u00e9sistance \u00e0 l&rsquo;enclenchement de 48,2 % \u00e0 [&hellip;]<\/p>\n","protected":false},"author":11,"featured_media":476194,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[4374],"domains":[47],"ppma_author":[3640,1143],"class_list":["post-476359","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-gestion-de-puissance","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Un MOSFET de puissance de 650V se divise en deux en fonction de...<\/title>\n<meta name=\"description\" content=\"le MOSFET silicium \u00e0 superjonction 650V de quatri\u00e8me g\u00e9n\u00e9ration pour les t\u00e9l\u00e9communications, l&#039;industrie et l&#039;informatique.\" 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