{"id":47290,"date":"2020-08-21T15:45:51","date_gmt":"2020-08-21T15:45:51","guid":{"rendered":"https:\/\/\/mosfet-canal-n-compacts-a-faible-resistance-a-letat-passant-pour-lautomobile\/"},"modified":"2020-08-21T15:45:51","modified_gmt":"2020-08-21T15:45:51","slug":"mosfet-canal-n-compacts-a-faible-resistance-a-letat-passant-pour-lautomobile","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-canal-n-compacts-a-faible-resistance-a-letat-passant-pour-lautomobile\/","title":{"rendered":"MOSFET canal-N compacts \u00e0 faible r\u00e9sistance \u00e0 l’\u00e9tat passant pour l’automobile"},"content":{"rendered":"

Ces MOSFET sont implant\u00e9s dans des bo\u00eetiers TSON Advance (WF) pour montage en surface, ce qui garantit une empreinte minimale de 3,3 \u00d7 3,6 mm (typique) sur la carte. Ces MOSFET peuvent remplacer des produits d’une taille de 5 \u00d7 6 mm. Gr\u00e2ce \u00e0 l’utilisation de bo\u00eetiers \u00e0 flancs mouillables sans pattes, le placement automatique et l’inspection optique automatis\u00e9e (AOI) sont facilit\u00e9s.<\/p>\n

Conformes \u00e0 la norme AEC-Q101, ces MOSFET sont plus particuli\u00e8rement destin\u00e9s aux applications automobiles. Leur compacit\u00e9 contribuent \u00e0 la r\u00e9duction de l’encombrement des unit\u00e9s de commande \u00e9lectronique (ECU) des v\u00e9hicules. Les r\u00e9gulateurs \u00e0 d\u00e9coupage, les convertisseurs CC-CC et les commandes moteurs sont d’autres applications potentielles.<\/p>\n

Les XPN3R804NC et XPN7R104NC ont tous deux une tension nominale de 40 V, tandis que les XPN6R706NC et XPN12006NC fonctionnent jusqu\u2019\u00e0 60 V<\/p>\n

https:\/\/toshiba.semicon-storage.com\/eu\/semiconductor\/product\/mosfets\/12v-300v-mosfets\/detail.XPN3R804NC.html<\/a><\/p>\n

 <\/p>\n","protected":false},"excerpt":{"rendered":"

Toshiba Electronics Europe a d\u00e9velopp\u00e9 une s\u00e9rie de nouveaux MOSFET canal-N \u00e0 haut rendement pour applications automobiles, bas\u00e9s sur la technologie avanc\u00e9e U-MOSVIII-H de la soci\u00e9t\u00e9.Deux produits ont une tension nominale de 40\u00a0V, tandis que deux autres\u00a0fonctionnent jusqu\u2019\u00e0 60\u00a0V. Tous pr\u00e9sentent des valeurs de r\u00e9sistance \u00e0 l’\u00e9tat passant extr\u00eamement faible, pouvant descendre \u00e0 3,8\u00a0m\u03a9,\u00a0ainsi qu\u2019un courant de fuite minimal.<\/p>\n","protected":false},"author":11,"featured_media":47291,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1143],"class_list":["post-47290","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"MOSFET canal-N compacts \u00e0 faible r\u00e9sistance \u00e0 l'\u00e9tat passan...<\/title>\n<meta name=\"description\" content=\"Toshiba Electronics Europe a d\u00e9velopp\u00e9 une s\u00e9rie de nouveaux MOSFET canal-N \u00e0 haut rendement pour applications automobiles, bas\u00e9s sur la technologie...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/47290\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFET canal-N compacts \u00e0 faible r\u00e9sistance \u00e0 l'\u00e9tat passant pour l'automobile\" \/>\n<meta property=\"og:description\" content=\"Toshiba Electronics Europe a d\u00e9velopp\u00e9 une s\u00e9rie de nouveaux MOSFET canal-N \u00e0 haut rendement pour applications automobiles, bas\u00e9s sur la technologie avanc\u00e9e U-MOSVIII-H de la soci\u00e9t\u00e9.Deux produits ont une tension nominale de 40\u00a0V, tandis que deux autres\u00a0fonctionnent jusqu\u2019\u00e0 60\u00a0V. 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