{"id":469541,"date":"2025-01-16T09:00:56","date_gmt":"2025-01-16T08:00:56","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=469541"},"modified":"2025-01-07T18:46:19","modified_gmt":"2025-01-07T17:46:19","slug":"transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/","title":{"rendered":"Transistors de puissance GaN 100-150 V refroidis au c\u00f4t\u00e9 sup\u00e9rieur r\u00e9duisant la temp\u00e9rature de jonction de 25 %"},"content":{"rendered":"<h3><span style=\"color: #000000;\"><span style=\"font-family: Arial, sans-serif;\"><span style=\"font-size: medium;\"><span style=\"font-family: Open Sans, sans-serif;\">Gr\u00e2ce \u00e0 leur bo\u00eetier avec refroidissement au c\u00f4t\u00e9 sup\u00e9rieur En-FCQFN, l<\/span><span style=\"font-family: Open Sans, sans-serif;\">es transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) en mode d\u2019am\u00e9lioration GaN sur silicium <\/span><span style=\"font-family: Open Sans, sans-serif;\">d\u2019<\/span><span style=\"color: #467886;\"><u><a href=\"https:\/\/www.innoscience.com\/\"><span style=\"font-family: Open Sans, sans-serif;\">Innoscience Technology<\/span><\/a><\/u><\/span> <span style=\"font-family: Open Sans, sans-serif;\">ont apport\u00e9<\/span><span style=\"font-family: Open Sans, sans-serif;\"> des avantages significatifs en termes de performances thermiques. <\/span><\/span><\/span><\/span><\/h3>\n<p><span style=\"color: #000000;\"><span style=\"font-family: Arial, sans-serif;\"><span style=\"font-size: medium;\"><span style=\"font-family: Open Sans, sans-serif;\">Par exemple, \u00e0 30 A, dans le bo\u00eetier avec refroidissement sup\u00e9rieur la temp\u00e9rature de jonction est r\u00e9duite \u00e0 39,6 \u00b0C, qui correspond \u00e0 une am\u00e9lioration de 25 % par rapport \u00e0 52,2 \u00b0C pour les types de bo\u00eetier avec refroidissement inf\u00e9rieur. <\/span><\/span><\/span><\/span><\/p>\n<p><span style=\"color: #000000;\"><span style=\"font-family: Open Sans, sans-serif;\"><span style=\"font-size: medium;\">Les quatre transistors de puissance GaN, r\u00e9cemment introduits sur le march\u00e9 dans le bo\u00eetier En-FCQFN avec refroidissement sup\u00e9rieur, comprennent les composants 100V INN100EQ 016A\/1,8m\u03a9 et 025A\/2,8m\u03a9, ainsi que les dispositifs 150V INN150EQ 032A\/3,9m\u03a9 et 070A\/7,0m\u03a9. Le brochage est compatible avec les pi\u00e8ces dans les bo\u00eetiers avec refroidissement inf\u00e9rieur, et les nouveaux dispositifs conservent \u00e9galement les caract\u00e9ristiques de toutes les pi\u00e8ces d\u2019Innoscience : faible r\u00e9sistance ; charge de porte r\u00e9duite ; perte de commutation inf\u00e9rieure ; charge de r\u00e9cup\u00e9ration inverse extr\u00eamement faible ; et d\u2019excellentes performances d\u2019efficacit\u00e9. <\/span><\/span><\/span><\/p>\n<p><span style=\"color: #000000;\"><span style=\"font-family: Open Sans, sans-serif;\"><span style=\"font-size: medium;\">Dr. Denis Marcon, Directeur G\u00e9n\u00e9ral d\u2019Innoscience Europe, commente : \u00ab En raison de leurs excellentes propri\u00e9t\u00e9s \u00e9lectriques et de leur emballage ultra-miniaturis\u00e9, nos pi\u00e8ces GaN moyenne et basse tension ont \u00e9t\u00e9 largement accept\u00e9es, en particulier dans les centres de donn\u00e9es, les syst\u00e8mes photovolta\u00efques et de stockage d\u2019\u00e9nergie, les commandes de moteurs et les alimentations pour les communications. Le nouvel emballage En-FCQFN avec refroidissement sup\u00e9rieur, qui optimise la gestion thermique, limite davantage l\u2019augmentation de la temp\u00e9rature du syst\u00e8me, \u00e9largissant ainsi le march\u00e9 potentiel.<\/span><\/span><\/span><\/p>\n<p><span style=\"color: #000000;\"><span style=\"font-family: Arial, sans-serif;\"><span style=\"font-size: medium;\"><span style=\"font-family: Open Sans, sans-serif;\">La s\u00e9rie GaN 100V~150V d\u2019Innoscience est \u00e9galement disponible en WLCSP, FCQFN, LGA et autres types de bo\u00eetiers, couvrant diff\u00e9rentes plages de r\u00e9sistance \u00e0 l&rsquo;\u00e9tat conducteur et domaines d\u2019application. Avec ces appareils, les nouveaux composants dans le bo\u00eetier En-FCQFN avec refroidissement sup\u00e9rieur sont disponibles en volumes de masse. <\/span><\/span><\/span><\/span><\/p>\n<p class=\"western\"><span style=\"color: #467886;\"><u><a href=\"https:\/\/www.innoscience.com\/\" target=\"_blank\" rel=\"noopener\"><span style=\"font-family: Open Sans, sans-serif;\"><span style=\"font-size: medium;\">Innoscience<\/span><\/span><\/a><\/u><\/span><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Gr\u00e2ce \u00e0 leur bo\u00eetier avec refroidissement au c\u00f4t\u00e9 sup\u00e9rieur En-FCQFN, les transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) en mode d\u2019am\u00e9lioration GaN sur silicium d\u2019Innoscience Technology ont apport\u00e9 des avantages significatifs en termes de performances thermiques. Par exemple, \u00e0 30 A, dans le bo\u00eetier avec refroidissement sup\u00e9rieur la temp\u00e9rature de jonction est r\u00e9duite \u00e0 39,6 \u00b0C, [&hellip;]<\/p>\n","protected":false},"author":39,"featured_media":469602,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[3897,1103],"domains":[47],"ppma_author":[6113],"class_list":["post-469541","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-gan-fr-2","tag-transistor","domains-electronique-eci"],"acf":[],"yoast_head":"<title><\/title>\n<meta name=\"description\" content=\"Gr\u00e2ce \u00e0 leur bo\u00eetier avec refroidissement au c\u00f4t\u00e9 sup\u00e9rieur En-FCQFN, les transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) en mode d\u2019am\u00e9lioration...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, 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class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/\"},\"author\":{\"name\":\"NicolasFeste\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/c7104a72b466a801f257e51481de0c43\"},\"headline\":\"Transistors de puissance GaN 100-150 V refroidis au c\u00f4t\u00e9 sup\u00e9rieur r\u00e9duisant la temp\u00e9rature de jonction de 25 %\",\"datePublished\":\"2025-01-16T08:00:56+00:00\",\"dateModified\":\"2025-01-07T17:46:19+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/\"},\"wordCount\":356,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"keywords\":[\"GaN\",\"Transistor\"],\"articleSection\":[\"Nouveaux produits\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/\",\"url\":\"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/\",\"name\":\"Transistors de puissance GaN 100-150 V refroidis au c\u00f4t\u00e9 sup\u00e9rieur r\u00e9duisant la temp\u00e9rature de jonction de 25 % -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\"},\"datePublished\":\"2025-01-16T08:00:56+00:00\",\"dateModified\":\"2025-01-07T17:46:19+00:00\",\"description\":\"Gr\u00e2ce \u00e0 leur bo\u00eetier avec refroidissement au c\u00f4t\u00e9 sup\u00e9rieur En-FCQFN, les transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) en mode d\u2019am\u00e9lioration GaN sur silicium d\u2019Innoscience Technology ont apport\u00e9 des avantages significatifs en termes de performances thermiques.\",\"breadcrumb\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/www.ecinews.fr\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Transistors de puissance GaN 100-150 V refroidis au c\u00f4t\u00e9 sup\u00e9rieur r\u00e9duisant la temp\u00e9rature de jonction de 25 %\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/en\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/c7104a72b466a801f257e51481de0c43\",\"name\":\"NicolasFeste\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/1ea421e7d03c1e96a9ea2bcf2705734a\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/2e187f4d96902933ba445ed6c760e11c?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/2e187f4d96902933ba445ed6c760e11c?s=96&d=mm&r=g\",\"caption\":\"NicolasFeste\"}}]}<\/script>","yoast_head_json":{"title":"Transistors de puissance GaN 100-150 V refroidis au c\u00f4t\u00e9 sup?...","description":"Gr\u00e2ce \u00e0 leur bo\u00eetier avec refroidissement au c\u00f4t\u00e9 sup\u00e9rieur En-FCQFN, les transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) en mode d\u2019am\u00e9lioration...","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/469541\/","og_locale":"fr_FR","og_type":"article","og_title":"Transistors de puissance GaN 100-150 V refroidis au c\u00f4t\u00e9 sup\u00e9rieur r\u00e9duisant la temp\u00e9rature de jonction de 25 %","og_description":"Gr\u00e2ce \u00e0 leur bo\u00eetier avec refroidissement au c\u00f4t\u00e9 sup\u00e9rieur En-FCQFN, les transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) en mode d\u2019am\u00e9lioration GaN sur silicium d\u2019Innoscience Technology ont apport\u00e9 des avantages significatifs en termes de performances thermiques.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/469541\/","og_site_name":"EENewsEurope","article_published_time":"2025-01-16T08:00:56+00:00","article_modified_time":"2025-01-07T17:46:19+00:00","og_image":[{"width":1080,"height":540,"url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2025\/01\/ECI4720-INS265A-100_150V-topside-cooling-GaN-package_FRE-scaled.jpg","type":"image\/jpeg"}],"author":"NicolasFeste","twitter_card":"summary_large_image","twitter_misc":{"Written by":"NicolasFeste","Est. reading time":"2 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/#article","isPartOf":{"@id":"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/"},"author":{"name":"NicolasFeste","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/c7104a72b466a801f257e51481de0c43"},"headline":"Transistors de puissance GaN 100-150 V refroidis au c\u00f4t\u00e9 sup\u00e9rieur r\u00e9duisant la temp\u00e9rature de jonction de 25 %","datePublished":"2025-01-16T08:00:56+00:00","dateModified":"2025-01-07T17:46:19+00:00","mainEntityOfPage":{"@id":"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/"},"wordCount":356,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"keywords":["GaN","Transistor"],"articleSection":["Nouveaux produits"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/","url":"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/","name":"Transistors de puissance GaN 100-150 V refroidis au c\u00f4t\u00e9 sup\u00e9rieur r\u00e9duisant la temp\u00e9rature de jonction de 25 % -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/en\/#website"},"datePublished":"2025-01-16T08:00:56+00:00","dateModified":"2025-01-07T17:46:19+00:00","description":"Gr\u00e2ce \u00e0 leur bo\u00eetier avec refroidissement au c\u00f4t\u00e9 sup\u00e9rieur En-FCQFN, les transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) en mode d\u2019am\u00e9lioration GaN sur silicium d\u2019Innoscience Technology ont apport\u00e9 des avantages significatifs en termes de performances thermiques.","breadcrumb":{"@id":"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.ecinews.fr\/fr\/transistors-de-puissance-gan-100-150-v-refroidis-au-cote-superieur-reduisant-la-temperature-de-jonction-de-25\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/www.ecinews.fr\/fr\/"},{"@type":"ListItem","position":2,"name":"Transistors de puissance GaN 100-150 V refroidis au c\u00f4t\u00e9 sup\u00e9rieur r\u00e9duisant la temp\u00e9rature de jonction de 25 %"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/en\/#website","url":"https:\/\/www.eenewseurope.com\/en\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/en\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/en\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/en\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/en\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/c7104a72b466a801f257e51481de0c43","name":"NicolasFeste","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/en\/#\/schema\/person\/image\/1ea421e7d03c1e96a9ea2bcf2705734a","url":"https:\/\/secure.gravatar.com\/avatar\/2e187f4d96902933ba445ed6c760e11c?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/2e187f4d96902933ba445ed6c760e11c?s=96&d=mm&r=g","caption":"NicolasFeste"}}]}},"authors":[{"term_id":6113,"user_id":39,"is_guest":0,"slug":"nicolasfeste","display_name":"NicolasFeste","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/2e187f4d96902933ba445ed6c760e11c?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/469541"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/39"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=469541"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/469541\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/469602"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=469541"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=469541"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=469541"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=469541"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=469541"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}