{"id":468749,"date":"2025-01-07T09:00:04","date_gmt":"2025-01-07T08:00:04","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=468749"},"modified":"2024-12-27T18:34:14","modified_gmt":"2024-12-27T17:34:14","slug":"livre-electronique-mettant-en-evidence-les-avantages-de-lelectronique-de-puissance-a-base-de-gan","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/livre-electronique-mettant-en-evidence-les-avantages-de-lelectronique-de-puissance-a-base-de-gan\/","title":{"rendered":"Livre \u00e9lectronique mettant en \u00e9vidence les avantages de l\u2019\u00e9lectronique de puissance \u00e0 base de GaN"},"content":{"rendered":"

Le<\/span><\/span> livre \u00e9lectronique<\/u><\/span><\/span><\/span><\/a> de <\/span><\/span>Mouser Electronics<\/u><\/span><\/span><\/span><\/a> en collaboration avec <\/span><\/span>Analog Devices, Inc. (ADI)<\/u><\/span><\/span><\/span><\/a> et <\/span><\/span>Bourns<\/u><\/span><\/span><\/span><\/a>, explore les d\u00e9fis et les avantages de la technologie au nitrure de gallium (GaN) dans la poursuite de l\u2019efficacit\u00e9, de la performance et de la durabilit\u00e9.<\/span><\/span><\/h3>\n

10 experts discutent de la technologie du nitrure de gallium<\/u><\/i><\/span><\/span><\/span><\/a> explore comment la technologie GaN, qui permet une efficacit\u00e9 sup\u00e9rieure, des vitesses de commutation plus rapides et une densit\u00e9 de puissance sup\u00e9rieure \u00e0 celle du silicium, r\u00e9volutionne l\u2019\u00e9lectronique de puissance. Les avantages de la technologie GaN offrent des implications de grande port\u00e9e dans divers secteurs, des applications automobiles et industrielles \u00e0 l\u2019\u00e9lectronique grand public et aux \u00e9nergies renouvelables. <\/span><\/span><\/p>\n

Le livre \u00e9lectronique fournit des informations d\u2019experts d\u2019ADI, de Bourns et d\u2019autres entreprises sur les avantages du GaN, les d\u00e9fis auxquels les nouveaux concepteurs de GaN peuvent \u00eatre confront\u00e9s et la meilleure fa\u00e7on de g\u00e9rer la transition du silicium au GaN. L\u2019livre \u00e9lectronique met \u00e9galement en \u00e9vidence les produits pertinents d\u2019ADI et de Bourns, notamment les contr\u00f4leurs et pilotes GaN, les inducteurs de puissance, et plus encore.<\/span><\/span><\/p>\n

Les r\u00e9gulateurs abaisseurs synchrones <\/span><\/span>LTC7890\/1 d\u2019ADI<\/u><\/span><\/span><\/span><\/a> sont des r\u00e9gulateurs abaisseurs \u00e0 commutation CC-CC de haute performance qui pilotent les \u00e9tages de puissance \u00e0 transistor \u00e0 effet de champ (FET) GaN synchrone \u00e0 canal N \u00e0 partir de tensions d\u2019entr\u00e9e allant jusqu\u2019\u00e0 100\u00a0V. Ces dispositifs simplifient la conception tout en ne n\u00e9cessitant aucune diode de protection ou autre composant externe suppl\u00e9mentaire, par rapport \u00e0 une solution silicium-oxyde-semiconducteur classique.<\/span><\/span><\/p>\n

Le <\/span><\/span>LT8418<\/u><\/span><\/span><\/span><\/a> est un pilote demi-pont au GaN de 100\u00a0V qui int\u00e8gre des \u00e9tages de pilote sup\u00e9rieur et inf\u00e9rieur, un contr\u00f4le logique du pilote et des protections. Le LT8418 fournit des pilotes de grille divis\u00e9s pour ajuster les vitesses de balayage d\u2019activation et de d\u00e9sactivation des FET GaN afin de supprimer les sonneries et d\u2019optimiser les performances EMI.<\/span><\/span><\/p>\n

Les fr\u00e9quences de commutation \u00e9lev\u00e9es de la technologie au GaN n\u00e9cessitent une s\u00e9lection rigoureuse des composants passifs. Bourns fournit des composants magn\u00e9tiques avanc\u00e9s optimis\u00e9s pour les fr\u00e9quences GaN plus \u00e9lev\u00e9es, y compris leurs inductances de puissance plates <\/span><\/span>PQ<\/u><\/span><\/span><\/span><\/a>, inductances \u00e0 puce <\/span><\/span>CWP3230A<\/u><\/span><\/span><\/span><\/a> et les inductances TLVR <\/span><\/span>TLVR1105T<\/u><\/span><\/span><\/span><\/a>. Ces dispositifs pr\u00e9sentent une faible inductance, des courants nominaux \u00e9lev\u00e9s et une construction blind\u00e9e pour un faible rayonnement.<\/span><\/span><\/p>\n

Le transformateur <\/span><\/span>HCTSM150102HL<\/u><\/span><\/span><\/span><\/a> de Bourns est dot\u00e9 d\u2019une isolation renforc\u00e9e, d\u2019une distance de fuite\/d\u00e9gagement minimale de 15 mm et d\u2019une tension de r\u00e9sistance de 7,64 kV (2 s) pour fournir un degr\u00e9 \u00e9lev\u00e9 d\u2019isolation contre les dangers li\u00e9s \u00e0 la haute tension. Le transformateur est construit avec un noyau torique en ferrite pour un facteur de couplage et une efficacit\u00e9 \u00e9lev\u00e9s.<\/span><\/span><\/p>\n

Pour lire le nouvel livre \u00e9lectronique, cliquez ici : <\/span><\/span>https:\/\/resources.mouser.com\/manufacturer-ebooks\/adi-bourns-10-experts-discuss-gallium-nitride-technology-mg\/<\/u><\/span><\/span><\/span><\/a>.<\/span><\/span><\/p>\n

Pour parcourir la vaste biblioth\u00e8que d\u2019livre \u00e9lectroniques des fabricants de Mouser, rendez-vous sur <\/span><\/span>https:\/\/resources.mouser.com\/manufacturer-ebooks\/<\/u><\/span><\/span><\/span><\/a>.<\/span><\/span><\/p>\n

Mouser Electronics<\/u><\/span><\/span><\/span><\/a> | <\/span><\/span>Analog Devices, Inc. (ADI)<\/u><\/span><\/span><\/span><\/a> | <\/span><\/span>Bourns<\/u><\/span><\/span><\/span><\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

Le livre \u00e9lectronique de Mouser Electronics en collaboration avec Analog Devices, Inc. (ADI) et Bourns, explore les d\u00e9fis et les avantages de la technologie au nitrure de gallium (GaN) dans la poursuite de l\u2019efficacit\u00e9, de la performance et de la durabilit\u00e9. 10 experts discutent de la technologie du nitrure de gallium explore comment la technologie […]<\/p>\n","protected":false},"author":39,"featured_media":468771,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[886,883],"tags":[3897,6675,6600],"domains":[47],"ppma_author":[6113],"class_list":["post-468749","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news-fr","category-technologies","tag-gan-fr-2","tag-livre-electronique","tag-livres-electroniques","domains-electronique-eci"],"acf":[],"yoast_head":"<\/title>\n<meta name=\"description\" content=\"Le livre \u00e9lectronique de Mouser Electronics en collaboration avec Analog Devices, Inc. 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