{"id":456987,"date":"2024-07-29T10:00:03","date_gmt":"2024-07-29T08:00:03","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=456987"},"modified":"2024-07-26T18:21:43","modified_gmt":"2024-07-26T16:21:43","slug":"analyse-comparative-des-performances-et-de-la-technologie-de-plusieurs-mosfet-sic","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/analyse-comparative-des-performances-et-de-la-technologie-de-plusieurs-mosfet-sic\/","title":{"rendered":"Analyse comparative des performances et de la technologie de plusieurs MOSFET SiC"},"content":{"rendered":"<h3>Le MOSFET SiC 200V est l\u2019\u00e9l\u00e9ment cl\u00e9 de la transition des VEB vers un syst\u00e8me 800V. En effet, les MOSFETs SiC sont devenus essentiels dans l\u2019\u00e9lectronique de puissance, transformant de nombreuses applications gr\u00e2ce \u00e0 leurs performances exceptionnelles.<\/h3>\n<p>Les MOSFETs SiC offrent des caract\u00e9ristiques impressionnantes, notamment une haute tension de claquage, une faible r\u00e9sistance \u00e0 l\u2019\u00e9tat passant et une excellente conductivit\u00e9 thermique, les positionnant comme des choix id\u00e9aux pour les dispositifs de commutation de puissance dans des environnements \u00e0 haute fr\u00e9quence et haute temp\u00e9rature. Le groupe Yole pr\u00e9voit que le march\u00e9 des dispositifs SiC atteindra 10 milliards de dollars US d\u2019ici 2029.<\/p>\n<p>Selon Amine Allouche, analyste principal en technologie et co\u00fbts, substrats et mat\u00e9riaux semi-conducteurs chez Yole Group : \u00ab La demande croissante pour des syst\u00e8mes \u00e9lectroniques de puissance efficaces et fiables dans des industries comme les v\u00e9hicules \u00e9lectriques, les \u00e9nergies renouvelables et l\u2019automatisation industrielle a accentu\u00e9 la n\u00e9cessit\u00e9 d\u2019une analyse approfondie des MOSFETs SiC. \u00bb<\/p>\n<p>Dans ce contexte, en plus de ses rapports annuels sur le march\u00e9 et la technologie, Power SiC et Power SiC \u2013 Manufacturing 2024, et de son moniteur trimestriel, Power SiC\/GaN Compound Semiconductor Market Monitor, Yole Group, la soci\u00e9t\u00e9 d\u2019analyse de march\u00e9, technologie, performance, ing\u00e9nierie inverse et co\u00fbts, s\u2019est associ\u00e9e \u00e0 SERMA Technologies, qui apporte son expertise dans les tests de performance des technologies \u00e9lectroniques, pour pr\u00e9senter le premier volume de leur nouveau rapport d\u2019analyse de performance des MOSFETs SiC discrets.<\/p>\n<p>Les deux entreprises ont combin\u00e9 leur expertise pour publier ce premier volume, qui \u00e9value et compare cinq MOSFETs SiC discrets de classe 1200V (ainsi qu\u2019un dispositif de r\u00e9f\u00e9rence Si IGBT) de fabricants mondiaux dans des conditions de test identiques. Les param\u00e8tres et caract\u00e9ristiques cl\u00e9s sont \u00e9valu\u00e9s pour offrir des informations pr\u00e9cieuses aux ing\u00e9nieurs, chercheurs et industries visant des solutions de puissance optimis\u00e9es.<\/p>\n<p><a href=\"https:\/\/www.serma-technologies.com\/analyse-comparative-des-performances-des-mosfet-sic-discrets-2024-vol-1\/\">Ce nouveau rapport d\u2019analyse comparative de performance des MOSFETs SiC discrets 2024 Vol 1<\/a> examine en profondeur les performances statiques des MOSFETs SiC s\u00e9lectionn\u00e9s pour fournir une compr\u00e9hension compl\u00e8te de leurs avantages.<\/p>\n<p>En effet, ce premier volume fournit une analyse de performance et une comparaison de 5 MOSFETs SiC discrets de classe 1200V de fabricants mondiaux : Wolfspeed (C3M0075120D), ROHM (SCT3080KLHR), Infineon (AIMW120R080M1), STMicroelectronics (SCTW40N120G2VAG), Anbonsemi (AS1M080120P), et un dispositif de r\u00e9f\u00e9rence Si IGBT d\u2019Infineon (IKW15N120CS7).<\/p>\n<p>L\u2019<a href=\"https:\/\/www.serma-technologies.com\/analyse-comparative-des-performances-des-mosfet-sic-discrets-2024-vol-1\/\">analyse comparative<\/a> inclut l\u2019\u00e9valuation de m\u00e9triques cl\u00e9s telles que la r\u00e9sistance \u00e0 l\u2019\u00e9tat passant, la tension drain-source, la tension de seuil, la tension de claquage et les courants de fuite dans diverses conditions de fonctionnement. Le rapport pr\u00e9sente \u00e9galement des donn\u00e9es et des graphiques des param\u00e8tres importants des dispositifs test\u00e9s, y compris RDS (on)(VGS), RDS(on)(IDS), VDS, VGS(th), VBR(DSS), IDSS, IGSS, QG, IDS(VDS), et ISD(VSD) test\u00e9s \u00e0 diff\u00e9rentes temp\u00e9ratures (de -55\u00b0C \u00e0 175\u00b0C).<\/p>\n<p>Par exemple, l\u2019\u00e9volution de la temp\u00e9rature de la Vgs(th) et de la tension de claquage Vbr a \u00e9t\u00e9 caract\u00e9ris\u00e9e pour \u00e9valuer le comportement de stabilit\u00e9 en temp\u00e9rature des dispositifs compar\u00e9s sur toute la plage de temp\u00e9ratures.<\/p>\n<p>Pierre-Emmanuel Blanc, responsable des tests de composants de puissance chez SERMA Technologies, explique : \u00ab Les tests de performance sont r\u00e9alis\u00e9s \u00e0 diff\u00e9rentes temp\u00e9ratures (-55\u00b0C, -40\u00b0C, 25\u00b0C, 150\u00b0C, 175\u00b0C) et respectent les normes et standards JEDEC, tels que JESD 24 et JEP 183. Le protocole de test, d\u00e9crit dans le rapport, implique de tester trois DuT4s pour chaque r\u00e9f\u00e9rence. \u00bb<\/p>\n<p>Cette analyse objective par un tiers, r\u00e9alis\u00e9e dans des conditions de test identiques, offre une comparaison de performance plus fiable que les fiches techniques des dispositifs ne le font g\u00e9n\u00e9ralement.<\/p>\n<p>De plus, Yole Group a r\u00e9alis\u00e9 une analyse physique de tous les dispositifs, incluant des images optiques et SEM et des mesures d\u00e9taill\u00e9es pour l\u2019ouverture du bo\u00eetier et la coupe transversale de la puce. Ces param\u00e8tres sont compil\u00e9s pour faciliter une analyse compl\u00e8te de leur impact sur les performances des dispositifs. Le rapport inclut \u00e9galement le co\u00fbt final de chaque dispositif et les compare en fonction de leur compromis \u00ab performance versus co\u00fbt \u00bb.<\/p>\n<p><a href=\"https:\/\/www.serma-technologies.com\/\">SERMA Technologies<\/a> | <a href=\"https:\/\/www.yolegroup.com\/\">Groupe Yole<\/a><\/p>\n<p><a href=\"https:\/\/news.google.com\/publications\/CAAqBwgKMJbcwQswuPfYAw?hl=fr&amp;gl=BE&amp;ceid=BE:fr\">Suivre ECInews sur Google news<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Le MOSFET SiC 200V est l\u2019\u00e9l\u00e9ment cl\u00e9 de la transition des VEB vers un syst\u00e8me 800V. En effet, les MOSFETs SiC sont devenus essentiels dans l\u2019\u00e9lectronique de puissance, transformant de nombreuses applications gr\u00e2ce \u00e0 leurs performances exceptionnelles. Les MOSFETs SiC offrent des caract\u00e9ristiques impressionnantes, notamment une haute tension de claquage, une faible r\u00e9sistance \u00e0 l\u2019\u00e9tat [&hellip;]<\/p>\n","protected":false},"author":39,"featured_media":456991,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[886],"tags":[7121,2206,2468],"domains":[47],"ppma_author":[6113],"class_list":["post-456987","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news-fr","tag-analyse-comparative","tag-carbure-de-silicium-sic","tag-mosfet-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Analyse comparative des performances et de la technologie de pl...<\/title>\n<meta name=\"description\" content=\"Le MOSFET SiC 200V est l\u2019\u00e9l\u00e9ment cl\u00e9 de la transition des VEB vers un syst\u00e8me 800V. 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