{"id":455181,"date":"2024-07-03T10:33:41","date_gmt":"2024-07-03T08:33:41","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?p=455181"},"modified":"2024-07-03T10:34:34","modified_gmt":"2024-07-03T08:34:34","slug":"globalfoundries-rachete-le-portefeuille-dip-gan-de-tagore","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/globalfoundries-rachete-le-portefeuille-dip-gan-de-tagore\/","title":{"rendered":"Globalfoundries rach\u00e8te le portefeuille d&rsquo;IP GaN de Tagore"},"content":{"rendered":"<h2>Le fondeur de puces GlobalFoundries Inc. a acquis un portefeuille de propri\u00e9t\u00e9 intellectuelle sur les semi-conducteurs de puissance au nitrure de gallium aupr\u00e8s de Tagore Technology Inc. (Chicago, Illinois).<\/h2>\n<p>Tagore Technology a \u00e9t\u00e9 fond\u00e9e en janvier 2011 pour \u00eatre le pionnier de la technologie des semi-conducteurs \u00e0 base de nitrure de gallium sur silicium (GaN-on-Si) et de GaN-SiC pour les applications de radiofr\u00e9quence (RF) et de gestion de l&rsquo;\u00e9nergie. Sa base d&rsquo;ing\u00e9nierie est situ\u00e9e \u00e0 Kolkata en Inde.<\/p>\n<p>Le montant pay\u00e9 par Globalfoundries pour l&rsquo;acquisition n&rsquo;a pas \u00e9t\u00e9 divulgu\u00e9.<\/p>\n<p>Cette technologie est adapt\u00e9e aux applications de puissance dans l&rsquo;automobile, l&rsquo;internet des objets (IoT) et les centres de donn\u00e9es d&rsquo;intelligence artificielle (AI), a d\u00e9clar\u00e9 Globalfoundries. L&rsquo;acquisition \u00e9largit le portefeuille de propri\u00e9t\u00e9 intellectuelle de GF dans le domaine de l&rsquo;\u00e9nergie et comprend une \u00e9quipe d&rsquo;ing\u00e9nieurs GaN de Tagore.<\/p>\n<p>\u00ab\u00a0La demande acc\u00e9l\u00e9r\u00e9e de semi-conducteurs plus \u00e9conomes en \u00e9nergie augmente consid\u00e9rablement, et Tagore a \u00e9t\u00e9 \u00e0 l&rsquo;avant-garde du d\u00e9veloppement de solutions innovantes utilisant la technologie GaN pour une large gamme de composants de puissance\u00a0\u00bb, a d\u00e9clar\u00e9 Amitava Das, cofondateur et directeur de l&rsquo;exploitation de Tagore Technology. \u00ab\u00a0L&rsquo;\u00e9quipe et moi-m\u00eame sommes ravis de rejoindre GlobalFoundries pour nous concentrer davantage sur la propri\u00e9t\u00e9 intellectuelle leader du march\u00e9 qui aidera \u00e0 relever les d\u00e9fis de la conception de puissance et \u00e0 soutenir l&rsquo;\u00e9volution continue des syst\u00e8mes d&rsquo;alimentation de l&rsquo;automobile, de l&rsquo;industrie et des centres de donn\u00e9es d&rsquo;intelligence artificielle.\u00a0\u00bb<\/p>\n<p>En f\u00e9vrier 2024, GF a re\u00e7u un financement direct de 1,5 milliard de dollars am\u00e9ricains dans le cadre de la loi am\u00e9ricaine CHIPS and Science Act. Une partie de cet investissement vise \u00e0 permettre la fabrication en grand volume de technologies critiques, notamment le GaN, afin de produire en toute s\u00e9curit\u00e9 les puces les plus essentielles.<\/p>\n<h4>Liens et articles connexes :<\/h4>\n<p><a href=\"http:\/\/www.gf.com\">www.gf.com<\/a><\/p>\n<p><a href=\"http:\/\/www.tagoretech.com\">www.tagoretech.com<\/a><\/p>\n<h4>Articles de presse :<\/h4>\n<p><a href=\"https:\/\/www.eenewseurope.com\/en\/35m-for-200mm-gan-on-silicon-at-globalfoundries\/\">GlobalFoundries investit 35 millions d&rsquo;USD dans le silicium gaN sur silicium de 200 mm<\/a><\/p>\n<p><a href=\"https:\/\/www.eenewseurope.com\/en\/sk-keyfoundry-preps-gan-market-entry\/\">SK Keyfoundry pr\u00e9pare son entr\u00e9e sur le march\u00e9 du GaN<\/a><\/p>\n<p><a href=\"https:\/\/www.eenewseurope.com\/en\/innoscience-asks-uspto-to-rule-infineon-gan-patent-invalid\/\">Innoscience demande \u00e0 l&rsquo;USPTO de d\u00e9clarer invalide le brevet GaN d&rsquo;Infineon <\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Le fondeur de puces GlobalFoundries Inc. a acquis un portefeuille de propri\u00e9t\u00e9 intellectuelle sur les semi-conducteurs de puissance au nitrure de gallium aupr\u00e8s de Tagore Technology Inc. (Chicago, Illinois). Tagore Technology a \u00e9t\u00e9 fond\u00e9e en janvier 2011 pour \u00eatre le pionnier de la technologie des semi-conducteurs \u00e0 base de nitrure de gallium sur silicium (GaN-on-Si) [&hellip;]<\/p>\n","protected":false},"author":40,"featured_media":190656,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[880,883],"tags":[3762,3897,3302],"domains":[47],"ppma_author":[6199,3631],"class_list":["post-455181","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites-economiques","category-technologies","tag-fonderie","tag-gan-fr-2","tag-ip-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Globalfoundries rach\u00e8te le portefeuille d&#039;IP GaN de Tagore ...<\/title>\n<meta name=\"description\" content=\"GlobalFoundries a acquis un portefeuille d&#039;IP sur les semi-conducteurs de puissance GaN aupr\u00e8s de Tagore Technology Inc. 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