{"id":452845,"date":"2024-06-04T19:56:55","date_gmt":"2024-06-04T17:56:55","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?p=452845"},"modified":"2024-06-04T19:56:55","modified_gmt":"2024-06-04T17:56:55","slug":"cgd-developpe-des-boitiers-pour-le-renforcement-thermique-du-gan","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/cgd-developpe-des-boitiers-pour-le-renforcement-thermique-du-gan\/","title":{"rendered":"CGD d\u00e9veloppe des bo\u00eetiers pour le renforcement thermique du GaN"},"content":{"rendered":"<h3><span style=\"font-size: 16px;\">Cambridge GaN Devices (CGD) a annonc\u00e9 deux bo\u00eetiers exclusifs pour ses dispositifs de puissance int\u00e9gr\u00e9s ICeGaN afin d&rsquo;augmenter les performances thermiques.<\/span><\/h3>\n<p>D\u00e9velopp\u00e9 pour le CGD, le bo\u00eetier GaN DHDFN-9-1 (Dual Heat-spreader DFN) est un bo\u00eetier mince, refroidi des deux c\u00f4t\u00e9s, avec une surface d&#8217;empreinte de 10\u00d710 mm et des flancs humidifiables pour simplifier l&rsquo;inspection optique. Il pr\u00e9sente une faible r\u00e9sistance thermique de 0,28 K\/W (Rth(JC)) et peut fonctionner avec un refroidissement par le dessous, par le dessus et par deux c\u00f4t\u00e9s, ce qui offre une grande souplesse de conception et surpasse le bo\u00eetier TOLT souvent utilis\u00e9 dans les configurations \u00e0 refroidissement par le dessus et, en g\u00e9n\u00e9ral, par deux c\u00f4t\u00e9<\/p>\n<p>Le bo\u00eetier DHDFN-9-1 a \u00e9t\u00e9 con\u00e7u avec un d\u00e9trompeur \u00e0 double borne pour faciliter un montage optimal sur circuit imprim\u00e9? Comme la mise en parall\u00e8le simple, le concepteur peut traiter facilement des applications jusqu&rsquo;\u00e0 6 kW.<\/p>\n<p>L&rsquo;am\u00e9lioration de la r\u00e9sistance thermique pr\u00e9sente plusieurs avantages. Tout d&rsquo;abord, une plus grande puissance est disponible pour un m\u00eame RDS(on) . Les appareils fonctionnent \u00e9galement \u00e0 des temp\u00e9ratures plus basses pour la m\u00eame puissance, avec moins de dissipation thermique \u00e0 g\u00e9rer, ce qui se traduit par une r\u00e9duction des co\u00fbts du syst\u00e8me. Des temp\u00e9ratures de fonctionnement plus basses se traduisent \u00e9galement par une meilleure fiabilit\u00e9 et une dur\u00e9e de vie augment\u00e9e. Enfin, si le co\u00fbt est une contrainte pour l&rsquo;application, les concepteurs disposent d&rsquo;une solution moins cher,\u00a0 avec un RDS(on) plus \u00e9lev\u00e9 et la puissance de sortie souhait\u00e9e.<\/p>\n<p>\u00ab\u00a0Ces nouveaux bo\u00eetiers font partie de notre strat\u00e9gie pour permettre aux clients d&rsquo;utiliser nos circuits de puissance ICeGaN GaN \u00e0 des niveaux de puissance plus \u00e9lev\u00e9s\u00a0\u00bb, a d\u00e9clar\u00e9 Nare Gabrielyan, responsable du marketing produit chez CGD. \u00ab\u00a0Les serveurs, les centres de donn\u00e9es, les onduleurs\/moteurs, les micro-onduleurs et d&rsquo;autres applications industrielles commencent tous \u00e0 profiter des avantages de la densit\u00e9 de puissance et de l&rsquo;efficacit\u00e9 qu&rsquo;apporte le GaN, mais ils sont aussi plus exigeants. Robustesse, fiabilit\u00e9, facilit\u00e9 de conception sont les points forts des nouveaux bo\u00eetiers ICeGaN\u00a0\u00bb.<\/p>\n<p>Ces bo\u00eetiers seront pr\u00e9sent\u00e9s pour la premi\u00e8re fois \u00e0 l&rsquo;exposition PCIM N\u00fcrnberg la semaine prochaine.<\/p>\n<p><a href=\"http:\/\/www.camgandevices.com\">www.camgandevices.com<\/a><\/p>\n<p><a href=\"https:\/\/news.google.com\/publications\/CAAqBwgKMJbcwQswuPfYAw?hl=fr&amp;gl=BE&amp;ceid=BE:fr\" target=\"news.google.com\" rel=\"noopener\">Suivre ECInews sur Google news<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Cambridge GaN Devices (CGD) a annonc\u00e9 deux bo\u00eetiers exclusifs pour ses dispositifs de puissance int\u00e9gr\u00e9s ICeGaN afin d&rsquo;augmenter les performances thermiques. D\u00e9velopp\u00e9 pour le CGD, le bo\u00eetier GaN DHDFN-9-1 (Dual Heat-spreader DFN) est un bo\u00eetier mince, refroidi des deux c\u00f4t\u00e9s, avec une surface d&#8217;empreinte de 10\u00d710 mm et des flancs humidifiables pour simplifier l&rsquo;inspection optique. [&hellip;]<\/p>\n","protected":false},"author":11,"featured_media":452787,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[883],"tags":[6526,4374,913],"domains":[47],"ppma_author":[1143,3640],"class_list":["post-452845","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-technologies","tag-boitier-gan","tag-gestion-de-puissance","tag-materials-processes-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>CGD d\u00e9veloppe des bo\u00eetiers pour le renforcement thermique du ...<\/title>\n<meta name=\"description\" content=\"Cambridge GaN Devices a annonc\u00e9 deux bo\u00eetiers pour ses circuits int\u00e9gr\u00e9s de puissance en GaN ICeGaN aux performances thermiques \u00e9lev\u00e9es.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link 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