{"id":449901,"date":"2024-04-29T20:10:55","date_gmt":"2024-04-29T18:10:55","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?p=449901"},"modified":"2024-04-29T20:10:55","modified_gmt":"2024-04-29T18:10:55","slug":"samsung-augmente-de-50-la-densite-des-bits-v-nand-de-1-to","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/samsung-augmente-de-50-la-densite-des-bits-v-nand-de-1-to\/","title":{"rendered":"Samsung augmente de 50 % la densit\u00e9 des bits V-NAND de 1 To"},"content":{"rendered":"<h3><span style=\"font-size: 16px;\">Samsung Electronics a commenc\u00e9 la production de masse de sa NAND verticale (V-NAND) de 9e g\u00e9n\u00e9ration \u00e0 cellule triple niveau (TLC) d&rsquo;un t\u00e9rabit (To), consolidant ainsi sa position de leader sur le march\u00e9 des flashes NAND.<\/span><\/h3>\n<p>Gr\u00e2ce \u00e0 la plus petite taille de cellule et au moule le plus fin de l&rsquo;industrie, Samsung a am\u00e9lior\u00e9 la densit\u00e9 de bits de la V-NAND de 9e g\u00e9n\u00e9ration d&rsquo;environ 50 % par rapport \u00e0 la V-NAND de 8e g\u00e9n\u00e9ration. De nouvelles innovations telles que l&rsquo;\u00e9vitement des interf\u00e9rences entre les cellules et l&rsquo;allongement de leur dur\u00e9e vie, ont \u00e9t\u00e9 appliqu\u00e9es pour am\u00e9liorer la qualit\u00e9 et la fiabilit\u00e9 des produits, tandis que l&rsquo;\u00e9limination des trous de canaux fictifs a permis de r\u00e9duire de mani\u00e8re significative la surface plane des cellules de m\u00e9moire.<\/p>\n<p>\u00ab\u00a0Afin de r\u00e9pondre \u00e0 l&rsquo;\u00e9volution des besoins de flash NAND, Samsung a repouss\u00e9 les limites de l&rsquo;architecture cellulaire et du sch\u00e9ma op\u00e9rationnel pour ce produit de nouvelle g\u00e9n\u00e9ration\u00a0\u00bb, a d\u00e9clar\u00e9 SungHoi Hur, responsable du produit et de la technologie Flash de Samsung Electronics. \u00ab\u00a0Gr\u00e2ce \u00e0 notre derni\u00e8re V-NAND, continuera d&rsquo;orienter le march\u00e9 des disques SSD\u00a0 haute performance et haute densit\u00e9 qui r\u00e9pondent aux besoins de la prochaine g\u00e9n\u00e9ration d&rsquo;intelligence artificielle.\u00a0\u00bb<\/p>\n<p><strong>Structure \u00e0 double empilement<\/strong><\/p>\n<p>En outre, la technologie de Samsung \u00ab\u00a0channel hole etching\u00a0\u00bb d\u00e9montre le l&rsquo;avance de la soci\u00e9t\u00e9 en mati\u00e8re de capacit\u00e9s de traitement. Cette technologie cr\u00e9e des circuits \u00e9lectroniques en empilant des couches de cellules et maximise la productivit\u00e9 de la fabrication en permettant le per\u00e7age simultan\u00e9 du plus grand nombre de couches de cellules de l&rsquo;industrie dans une structure \u00e0 double empilement. \u00c0 mesure que le nombre de couches cellulaires augmente, la capacit\u00e9 de traverser un plus grand nombre de cellules devient essentielle, ce qui exige des techniques de gravure plus sophistiqu\u00e9es<\/p>\n<p>La V-NAND de 9e g\u00e9n\u00e9ration est \u00e9quip\u00e9e de l&rsquo;interface flash NAND\u00a0 \u00ab\u00a0Toggle 5.1\u00a0\u00bb, qui permet d&rsquo;augmenter les vitesses d&rsquo;entr\u00e9e\/sortie des donn\u00e9es de 33 % pour atteindre 3,2 Gbps. Parall\u00e8lement \u00e0 cette nouvelle interface, Samsung entend consolider sa position sur le march\u00e9 des disques SSD haute performance en \u00e9largissant la prise en charge de la norme PCIe 5.0.<\/p>\n<p>La consommation d&rsquo;\u00e9nergie a \u00e9galement \u00e9t\u00e9 am\u00e9lior\u00e9e de 10 % par rapport \u00e0 la g\u00e9n\u00e9ration pr\u00e9c\u00e9dente gr\u00e2ce \u00e0 des avanc\u00e9es dans la conception \u00e0 faible consommation d&rsquo;\u00e9nergie. La r\u00e9duction de la consommation d&rsquo;\u00e9nergie et des \u00e9missions de carbone devenant vitale pour les clients, la V-NAND de 9e g\u00e9n\u00e9ration devrait \u00eatre id\u00e9ale pour les applications futures.<\/p>\n<p>Samsung a commenc\u00e9 la production de masse de la V-NAND de 9e g\u00e9n\u00e9ration TLC de 1 To ce mois-ci, suivie par le mod\u00e8le QLC (quad level cell) au cours du second semestre de cette ann\u00e9e.<\/p>\n<p><a href=\"https:\/\/semiconductor.samsung.com\/emea\">Samsung<\/a><\/p>\n<p><a href=\"https:\/\/news.google.com\/publications\/CAAqBwgKMJbcwQswuPfYAw?hl=fr&amp;gl=BE&amp;ceid=BE:fr\" target=\"news.google.com\" rel=\"noopener\">Suivre ECInews sur Google news<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>La structure V-NAND \u00e0 double pile r\u00e9volutionnaire maximise la productivit\u00e9 de la fabrication gr\u00e2ce \u00e0 la technologie avanc\u00e9e de gravure des trous de canal.<\/p>\n","protected":false},"author":11,"featured_media":449615,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[883],"tags":[3679,4283,6266,6265],"domains":[47],"ppma_author":[1143,3682],"class_list":["post-449901","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-technologies","tag-ai-fr","tag-memoire-fr","tag-ssd-fr","tag-v-nand-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Samsung augmente de 50 % la densit\u00e9 des bits V-NAND de 1 To ...<\/title>\n<meta name=\"description\" content=\"Samsung a am\u00e9lior\u00e9 la densit\u00e9 de bits de la V-NAND de 9e g\u00e9n\u00e9ration d&#039;environ 50 % par rapport \u00e0 la V-NAND de 8e g\u00e9n\u00e9ration.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" 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