{"id":448744,"date":"2024-04-16T09:00:44","date_gmt":"2024-04-16T07:00:44","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=448744"},"modified":"2024-04-15T20:14:53","modified_gmt":"2024-04-15T18:14:53","slug":"circuit-integre-pilote-optimisant-les-performances-des-hemt-gan","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/circuit-integre-pilote-optimisant-les-performances-des-hemt-gan\/","title":{"rendered":"Circuit int\u00e9gr\u00e9 pilote optimisant les performances des HEMT GaN"},"content":{"rendered":"<p><strong>Le circuit int\u00e9gr\u00e9 de pilote GaN INS1001DE d\u00e9velopp\u00e9 par <\/strong><strong><a href=\"https:\/\/www.innoscience.com\/\">Innoscience Technology<\/a><\/strong><strong> est<\/strong><strong> con\u00e7u pour piloter des HEMT GaN monocanal dans des applications SR c\u00f4t\u00e9 bas, c\u00f4t\u00e9 haut ou c\u00f4t\u00e9 secondaire.<\/strong><\/p>\n<p>Min Chen, vice-pr\u00e9sident de la conception des circuits int\u00e9gr\u00e9s chez Innoscience, commente : \u00ab L&rsquo;INS1001DE est parfaitement adapt\u00e9 pour optimiser les performances des HEMT GaN en mode e et en particulier de l&rsquo;InnoGaN en mode e d&rsquo;Innoscience. Une forte capacit\u00e9 de pilotage et un d\u00e9lai de propagation rapide, ainsi qu&rsquo;une r\u00e9duction du bruit d&rsquo;entr\u00e9e et des fonctionnalit\u00e9s de protection UVLO, OVP et OTP int\u00e9gr\u00e9es, rendent l&rsquo;INS1001DE extr\u00eamement adapt\u00e9 aux applications GaN \u00e0 haute puissance, haute fr\u00e9quence et grande robustesse.<\/p>\n<p>Le nouveau pilote de grille dispose de deux entr\u00e9es PWM non inverseuses et inverseuses, permettant un fonctionnement flexible avec le contr\u00f4leur, l&rsquo;optocoupleur et l&rsquo;isolateur num\u00e9rique. Les sorties ind\u00e9pendantes Pull-up et Pull-down facilitent le contr\u00f4le des vitesses d&rsquo;allumage et d&rsquo;arr\u00eat. La tension du pilote est programmable par l&rsquo;utilisateur pour r\u00e9pondre aux diff\u00e9rentes exigences de grille \u00e0 l&rsquo;aide d&rsquo;un diviseur de r\u00e9sistance externe. Un LDO 5 V int\u00e9gr\u00e9 est inclus pour alimenter un isolateur num\u00e9rique ou d&rsquo;autres circuits dans les applications haut de gamme.<\/p>\n<p>Dot\u00e9 d&rsquo;une large plage de tension de fonctionnement de 6 V \u00e0 20 V et d&rsquo;une forte r\u00e9sistance de traction de 1,3 \u03a9 et de 0,5 \u03a9 de traction, l&rsquo;INS1001DE est disponible dans un bo\u00eetier DFN3x3-10L thermiquement am\u00e9lior\u00e9. Les applications incluent les alimentations \u00e0 d\u00e9coupage, les convertisseurs AC\/DC et DC\/DC, les convertisseurs Boost, Flyback, Forward, Half-Bridge et Full-Bridge, les circuits de redressement synchrones, les onduleurs solaires, la commande de moteur et les UPS.<\/p>\n<p><a href=\"https:\/\/www.innoscience.com\/\">Innoscience Technology<\/a><\/p>\n<p><a href=\"https:\/\/news.google.com\/publications\/CAAqBwgKMJbcwQswuPfYAw?hl=fr&amp;gl=BE&amp;ceid=BE:fr\">Suivre ECInews sur Google news<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Le circuit int\u00e9gr\u00e9 de pilote GaN INS1001DE d\u00e9velopp\u00e9 par Innoscience Technology est con\u00e7u pour piloter des HEMT GaN monocanal dans des applications SR c\u00f4t\u00e9 bas, c\u00f4t\u00e9 haut ou c\u00f4t\u00e9 secondaire. Min Chen, vice-pr\u00e9sident de la conception des circuits int\u00e9gr\u00e9s chez Innoscience, commente : \u00ab L&rsquo;INS1001DE est parfaitement adapt\u00e9 pour optimiser les performances des HEMT GaN [&hellip;]<\/p>\n","protected":false},"author":39,"featured_media":448746,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[936,3897],"domains":[47],"ppma_author":[6113],"class_list":["post-448744","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-circuits-integres","tag-gan-fr-2","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Circuit int\u00e9gr\u00e9 pilote optimisant les performances des HEMT GaN ...<\/title>\n<meta name=\"description\" content=\"Le Circuit int\u00e9gr\u00e9 de pilote GaN INS1001DE d\u00e9velopp\u00e9 par Innoscience Technology est con\u00e7u pour piloter des HEMT GaN 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