{"id":446624,"date":"2024-03-20T15:10:31","date_gmt":"2024-03-20T14:10:31","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=446624"},"modified":"2024-03-20T19:02:21","modified_gmt":"2024-03-20T18:02:21","slug":"circuits-integres-gan-hemt-700-v","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/circuits-integres-gan-hemt-700-v\/","title":{"rendered":"Des circuits int\u00e9gr\u00e9s GaN HEMT 700 V"},"content":{"rendered":"

Innoscience a annonc\u00e9 une famille de quatre nouveaux syst\u00e8mes int\u00e9gr\u00e9s. Ces dispositifs combinent l’alimentation GaN HEMT, le pilote, la d\u00e9tection de courant et d’autres fonctions dans un seul bo\u00eetier QFN 6×8 mm standard de l’industrie.<\/h3>\n

Les dispositifs SolidGaN 700 V ISG610x couvrent la plage de 140 m\u03a9 \u00e0 450 m\u03a9 et permettent d’\u00e9conomiser de l’espace sur les circuits imprim\u00e9s et le nombre de nomenclatures, tout en augmentant l’efficacit\u00e9 et en simplifiant la conception pour les applications telles que les chargeurs USB-PD, l’\u00e9clairage LED, les alimentations CA\/CC et les PFC, les QR flyback ainsi que les convertisseurs ACF et LLC.<\/p>\n

Les nouveaux appareils int\u00e9gr\u00e9s disposent d’une large plage VCC de 9 V \u00e0 80 V, ce qui est avantageux dans les applications USB-PD n\u00e9cessitant une sortie jusqu’\u00e0 28 V. Les appareils concurrents qui ont une tension d’entr\u00e9e limit\u00e9e \u00e0 30 V n\u00e9cessitent un LDO externe haute tension ou plusieurs composants discrets pour obtenir une sortie sup\u00e9rieure \u00e0 15 V. Les nouveaux composants SolidGaN d’Innoscience peuvent facilement couvrir les exigences de tension de sortie USB-PD sans LDO externe ou autres composants, ce qui permet d’\u00e9conomiser le co\u00fbt de la nomenclature et de r\u00e9duire la surface sur la carte.<\/p>\n

Pour un fonctionnement \u00e0 faible consommation, les circuits int\u00e9gr\u00e9s de la famille ISG610x disposent \u00e9galement d’un faible courant de repos de 115 \u00b5A, gr\u00e2ce \u00e0 un mode veille automatique innovant qui est activ\u00e9 lorsque la tension du signal PWM reste faible pendant une certaine p\u00e9riode. Pendant ce temps, la plupart des circuits internes sont \u00e9teints, ce qui r\u00e9duit consid\u00e9rablement le gaspillage d’\u00e9nergie, permettant aux appareils de r\u00e9pondre aux sp\u00e9cifications d’alimentation en veille sans charge des organismes de r\u00e9glementation tels qu’ENERGYSTAR.<\/p>\n

La d\u00e9tection de courant sans perte avec une pr\u00e9cision de 7 % des nouveaux dispositifs SolidGaN offre plusieurs avantages. Premi\u00e8rement, \u00e9tant donn\u00e9 que la perte de r\u00e9sistance de d\u00e9tection de courant est \u00e9limin\u00e9e, un RDS(on) plus important peut \u00eatre pris en charge sans perte de performances, ce qui entra\u00eene une r\u00e9duction des co\u00fbts. Deuxi\u00e8mement, le nombre de composants est r\u00e9duit et l’empreinte PCB est minimis\u00e9e.<\/p>\n

Min Chen, vice-pr\u00e9sident de l’ing\u00e9nierie de conception chez Innoscience, a comment\u00e9 : \u00ab Le haut niveau d’int\u00e9gration avec une pr\u00e9cision de d\u00e9tection de courant \u00e9lev\u00e9e et un faible courant de repos rend la famille ISG610x adapt\u00e9e \u00e0 des applications simples \u00e0 utiliser, \u00e0 faible nombre de composants et \u00e0 haut rendement.<\/p>\n

Les appareils disposent \u00e9galement d’un taux de balayage d’activation du commutateur programmable pour permettre la r\u00e9duction des EMI. Un r\u00e9gulateur de tension lin\u00e9aire interne est inclus pour assurer une alimentation de pilote de 6,5 V \u00e9troitement r\u00e9gul\u00e9e, maximisant la capacit\u00e9 de courant du GaN HEMT tout en garantissant la fiabilit\u00e9 du GaN HEMT. Enfin, un verrouillage int\u00e9gr\u00e9 en cas de sous-tension (UVLO), une protection contre les surintensit\u00e9s (OCP) et une protection contre la surchauffe (OTP) sont int\u00e9gr\u00e9s au circuit int\u00e9gr\u00e9.<\/p>\n

Une carte de d\u00e9monstration, INNDAD120B1, est disponible, d\u00e9crivant une alimentation flyback quasi-r\u00e9sonante avec une entr\u00e9e 90V~264V AC et une sortie 5V\/3A, 9V\/3A, 12V\/3A, 15V\/3A, 20V\/6A (cr\u00eate de 120W).\u00a0Dr Denis Marcon, directeur g\u00e9n\u00e9ral d’Innoscience Europe, commente : \u00ab Je suis enthousiasm\u00e9 par l’introduction de ces nouveaux composants int\u00e9gr\u00e9s pour les applications HT, lesquels viennent compl\u00e9ter notre portefeuille de solutions discr\u00e8tes facilement disponibles. D\u00e9sormais, les ing\u00e9nieurs peuvent choisir entre une solution discr\u00e8te ou int\u00e9gr\u00e9e, celle qui correspond le mieux \u00e0 leurs applications et aux besoins de leur cha\u00eene d’approvisionnement.\u00a0<\/p>\n

www.innoscience.com<\/a>.\u00a0<\/p>\n

Suivre ECInews sur Google news<\/a><\/p>\n

 <\/p>\n

 <\/p>\n","protected":false},"excerpt":{"rendered":"

Innoscience a annonc\u00e9 une famille de quatre nouveaux syst\u00e8mes int\u00e9gr\u00e9s. Ces dispositifs combinent l’alimentation GaN HEMT, le pilote, la d\u00e9tection de courant et d’autres fonctions dans un seul bo\u00eetier QFN 6×8 mm standard de l’industrie. Les dispositifs SolidGaN 700 V ISG610x couvrent la plage de 140 m\u03a9 \u00e0 450 m\u03a9 et permettent d’\u00e9conomiser de l’espace […]<\/p>\n","protected":false},"author":36,"featured_media":446625,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[936,1164],"domains":[47],"ppma_author":[1154],"class_list":["post-446624","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-circuits-integres","tag-composants-de-puissance","domains-electronique-eci"],"acf":[],"yoast_head":"Des circuits int\u00e9gr\u00e9s GaN HEMT 700 V ...<\/title>\n<meta name=\"description\" content=\"Innoscience a annonc\u00e9 une famille de quatre nouveaux syst\u00e8mes int\u00e9gr\u00e9s. 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