{"id":445518,"date":"2024-03-06T19:12:09","date_gmt":"2024-03-06T18:12:09","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=445518"},"modified":"2024-03-06T19:12:09","modified_gmt":"2024-03-06T18:12:09","slug":"diodes-a-barriere-schottky-avec-une-tension-de-claquage-de-100v","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/diodes-a-barriere-schottky-avec-une-tension-de-claquage-de-100v\/","title":{"rendered":"Diodes \u00e0 barri\u00e8re Schottky avec une tension de claquage de 100V"},"content":{"rendered":"<table>\n<tbody>\n<tr>\n<td>\n<h3>Id\u00e9ales pour les phares LED d\u2019automobiles et d\u2019autres applications de commutation \u00e0 grande vitesse, ces diodes \u00e0 barri\u00e8re Schottky (SBD) d\u00e9velopp\u00e9es par Rohm fournissent un temps de r\u00e9cup\u00e9ration inverse (trr) \u00e0 la pointe de l\u2019industrie pour l\u2019alimentation \u00e9lectrique et les circuits de protection dans les applications automobiles, industrielles et grand public.<\/h3>\n<p>\nBien qu\u2019il existe de nombreux types de diodes, les SBD \u00e0 haut rendement sont de plus en plus utilis\u00e9es dans de nombreuses applications. En particulier, les SBD avec une structure Trench-MOS qui fournissent une tension V<sub>F<\/sub>\u00a0inf\u00e9rieure \u00e0 celle des types planaires permettent une plus grande efficacit\u00e9 dans les applications de rectification. Cependant, un inconv\u00e9nient des structures Trench-MOS est qu\u2019elles pr\u00e9sentent g\u00e9n\u00e9ralement un temps de r\u00e9cup\u00e9ration inverse moins bon que celui des topologies planes, d\u2019o\u00f9 une perte de puissance plus \u00e9lev\u00e9e lorsqu\u2019elles sont utilis\u00e9es pour la commutation. Pour y r\u00e9pondre, Rohm a d\u00e9velopp\u00e9 une nouvelle s\u00e9rie utilisant une structure Trench-MOS propri\u00e9taire r\u00e9duisant simultan\u00e9ment \u00e0 la fois la tension V<sub>F<\/sub>\u00a0et le courant I<sub>R<\/sub>\u00a0(qui se trouvent dans une relation de compromis) tout en r\u00e9alisant un temps de r\u00e9cup\u00e9ration inverse de premier ordre.<br \/>\nEn \u00e9largissant les quatre gammes SBD conventionnelles existantes optimis\u00e9es pour de nombreuses exigences, la s\u00e9rie YQ est la premi\u00e8re de Rohm \u00e0 adopter une structure MOS en tranch\u00e9e. La conception propri\u00e9taire r\u00e9alise un temps de r\u00e9cup\u00e9ration inverse de premier ordre de 15ns qui r\u00e9duit la perte de temps de r\u00e9cup\u00e9ration inverse d\u2019environ 37% et la perte globale de commutation d\u2019environ 26% par rapport aux produits MOS g\u00e9n\u00e9raux de type \u00ab Trench \u00bb, contribuant \u00e0 une moindre consommation d\u2019\u00e9nergie dans les applications. La nouvelle structure am\u00e9liore \u00e9galement \u00e0 la fois les pertes V<sub>F<\/sub>\u00a0et I<sub>R<\/sub>\u00a0en comparaison avec les SBD planaires conventionnelles. Il en r\u00e9sulte une perte de puissance plus faible en cas d\u2019utilisation dans des applications de polarisation directe telles que la rectification, tout en r\u00e9duisant le risque d\u2019emballement thermique, qui repr\u00e9sente un probl\u00e8me majeur des SBD. En tant que telles, elles sont id\u00e9ales pour les ensembles n\u00e9cessitant une commutation \u00e0 grande vitesse, tels que les circuits d\u2019entra\u00eenement pour les phares LED d\u2019automobiles et les convertisseurs DC-DC des v\u00e9hicules xEV, enclins \u00e0 g\u00e9n\u00e9rer de la chaleur.<\/p>\n<p><strong>Structure MOS de SBD en tranch\u00e9e<\/strong><br \/>\nLa structure Trench-MOS est cr\u00e9\u00e9e en formant une tranch\u00e9e utilisant du polysilicium dans la couche de tranche \u00e9pitaxiale afin d\u2019att\u00e9nuer la concentration du champ \u00e9lectrique. Cela r\u00e9duit la r\u00e9sistance de la couche de tranche \u00e9pitaxiale, pour obtenir une tension V<sub>F<\/sub>\u00a0moindre en appliquant une tension dans le sens direct. En m\u00eame temps, pendant la polarisation inverse, la concentration du champ \u00e9lectrique est minimis\u00e9e, ce qui d\u00e9cro\u00eet significativement l\u2019intensit\u00e9 I<sub>R<\/sub>. Par cons\u00e9quent, la s\u00e9rie YQ am\u00e9liore V<sub>F<\/sub>\u00a0et I<sub>R<\/sub>\u00a0de respectivement 7% et 82% environ par rapport \u00e0 des produits conventionnels.<br \/>\nEt contrairement aux structures Trench-MOS typiques o\u00f9 le temps de r\u00e9cup\u00e9ration inverse est moins bon que celui des types planaires en raison d\u2019une plus grande capacitance parasite (composant de r\u00e9sistance dans l\u2019appareil), la s\u00e9rie YQ parvient \u00e0 un temps de r\u00e9cup\u00e9ration inverse \u00e0 la pointe de l\u2019industrie de 15ns en adoptant une conception structurelle unique. Cela permet de r\u00e9duire les pertes de commutation d\u2019environ 26%, ce qui contribue \u00e0 de meilleures \u00e9conomies d\u2019\u00e9nergie dans les applications.<\/p>\n<p><a href=\"https:\/\/www.rohm.com\/products\/diodes\/schottky-barrier-diodes\">www.rohm.com\/products\/diodes\/schottky-barrier-diodes<\/a><\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<p>&nbsp;<\/p>\n<p><u><a href=\"https:\/\/news.google.com\/publications\/CAAqBwgKMJbcwQswuPfYAw?hl=fr&amp;gl=BE&amp;ceid=BE:fr\">Suivre ECInews sur Google news<\/a><\/u><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Id\u00e9ales pour les phares LED d\u2019automobiles et d\u2019autres applications de commutation \u00e0 grande vitesse, ces diodes \u00e0 barri\u00e8re Schottky (SBD) d\u00e9velopp\u00e9es par Rohm fournissent un temps de r\u00e9cup\u00e9ration inverse (trr) \u00e0 la pointe de l\u2019industrie pour l\u2019alimentation \u00e9lectrique et les circuits de protection dans les applications automobiles, industrielles et grand public. Bien qu\u2019il existe de [&hellip;]<\/p>\n","protected":false},"author":36,"featured_media":445519,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[4100,891,1164],"domains":[47],"ppma_author":[1154],"class_list":["post-445518","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-auromobile","tag-automotive-fr","tag-composants-de-puissance","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Diodes \u00e0 barri\u00e8re Schottky avec une tension de claquage de 100V ...<\/title>\n<meta name=\"description\" content=\"Id\u00e9ales pour les phares LED d\u2019automobiles et d\u2019autres applications de commutation \u00e0 grande vitesse, ces diodes \u00e0 barri\u00e8re Schottky (SBD)...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/445518\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Diodes \u00e0 barri\u00e8re Schottky avec une tension de claquage de 100V\" \/>\n<meta property=\"og:description\" content=\"Id\u00e9ales pour les phares LED d\u2019automobiles et d\u2019autres applications de commutation \u00e0 grande vitesse, ces diodes \u00e0 barri\u00e8re Schottky (SBD) d\u00e9velopp\u00e9es par Rohm fournissent un temps de r\u00e9cup\u00e9ration inverse (trr) \u00e0 la pointe de l\u2019industrie pour l\u2019alimentation \u00e9lectrique et les circuits de protection dans les applications automobiles, industrielles et grand public. 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