{"id":445100,"date":"2024-02-29T18:53:35","date_gmt":"2024-02-29T17:53:35","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=445100"},"modified":"2024-02-29T18:53:35","modified_gmt":"2024-02-29T17:53:35","slug":"driver-gan-commandant-les-transistors-fet-en-nitrure-de-gallium-avec-fiabilite-et-robustesse","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/driver-gan-commandant-les-transistors-fet-en-nitrure-de-gallium-avec-fiabilite-et-robustesse\/","title":{"rendered":"Driver GaN commandant les transistors FET en nitrure de gallium avec fiabilit\u00e9 et robustesse"},"content":{"rendered":"

Le nouveau\u00a0circuit\u00a0de commande\u00a0GaN\u00a0en\u00a0demi-pont\u00a0\u00e0\u00a0100\u00a0V\u00a0LT8418\u00a0d\u2019Analog Devices a \u00e9t\u00e9 con\u00e7u pour\u00a0simplifier\u00a0la mise en \u0153uvre des\u00a0transistors \u00e0 effet de champ\u00a0(FET) en nitrure de gallium (GaN)\u00a0en\u00a0conjuguant\u00a0une commande de grille\u00a0robuste, une commutation\u00a0en fr\u00e9quences \u00e9lev\u00e9es\u00a0et une efficacit\u00e9 accrue\u00a0au\u00a0niveau\u00a0syst\u00e8me.<\/h3>\n

 <\/p>\n

Int\u00e9grant les \u00e9tages de commande sup\u00e9rieur et inf\u00e9rieur, la commande logique\u00a0du driver\u00a0et les protections,\u00a0ce nouveau\u00a0circuit\u00a0peut \u00eatre configur\u00e9 en\u00a0plusieurs\u00a0topologies\u00a0:\u00a0pont complet,\u00a0demi-pont\u00a0synchrone,\u00a0abaisseur (buck), \u00e9l\u00e9vateur (boost)\u00a0ou\u00a0mixte (buck-boost).\u00a0Le circuit LT8418\u00a0se caract\u00e9rise par\u00a0une forte capacit\u00e9 d\u2019absorption\/fourniture\u00a0(sink\/source)\u00a0de courant avec une r\u00e9sistance d\u2019excursion haute\u00a0\u00e0\u00a00,6\u00a0\u03a9 et une r\u00e9sistance d\u2019excursion basse\u00a0\u00e0\u00a00,2\u00a0\u03a9 pour\u00a0commander un large \u00e9ventail de transistors\u00a0FET\u00a0en nitrure de gallium.\u00a0Il\u00a0int\u00e8gre\u00a0par ailleurs\u00a0un commutateur\u00a0auto-\u00e9l\u00e9vateur (bootstrap)\u00a0intelligent pour g\u00e9n\u00e9rer une tension d\u2019\u00e9l\u00e9vation\u00a0\u00e9quilibr\u00e9e \u00e0 partir de\u00a0la broche\u00a0VCC<\/sub>\u00a0et\u00a0avec une tension de\u00a0d\u00e9chet\u00a0minime.<\/p>\n

Le LT8418\u00a0divise les circuits de commande\u00a0de grille pour ajuster la\u00a0vitesse de balayage de mise en conduction\u00a0(turn-on)\u00a0et de blocage\u00a0(turn-off)\u00a0des\u00a0transistors\u00a0FET\u00a0GaN\u00a0en vue\u00a0de supprimer l\u2019effet\u00a0d\u2019ondulation\u00a0et d\u2019optimiser les performances d\u2019interf\u00e9rence \u00e9lectromagn\u00e9tique. Toutes les entr\u00e9es et sorties du circuit\u00a0de commande sont\u00a0par d\u00e9faut \u00e0 l\u2019\u00e9tat bas\u00a0afin d\u2019emp\u00eacher les\u00a0transistors\u00a0FET\u00a0GaN\u00a0de s\u2019activer\u00a0par erreur. Les entr\u00e9es\u00a0PWM\u00a0du LT8418\u00a0(INT et INB)\u00a0sont ind\u00e9pendantes et compatibles avec la logique TTL pour une commande de haute pr\u00e9cision. Le LT8418 fonctionne avec un\u00a0temps\u00a0de propagation de\u00a0seulement\u00a010\u00a0ns et une adaptation du temps de propagation\u00a0de 1,5\u00a0ns entre les\u00a0voies\u00a0sup\u00e9rieure\u00a0et inf\u00e9rieure, ce qui\u00a0convient\u00a0aux convertisseurs\u00a0continu-continu\u00a0haute fr\u00e9quence, aux\u00a0circuits de commande\u00a0de moteur et aux amplificateurs audio de classe D. De plus, le bo\u00eetier WLCSP\u00a0sur lequel est mont\u00e9 le LT8418\u00a0minimise les\u00a0inductances\u00a0parasites, ce qui permet\u00a0de l\u2019utiliser\u00a0dans les applications haute performance et \u00e0 densit\u00e9 de puissance \u00e9lev\u00e9e.<\/p>\n

 <\/p>\n

www.analog.com\/en\/products\/lt8418.html<\/a><\/p>\n

Suivre ECInews sur Google news<\/a><\/u><\/p>\n","protected":false},"excerpt":{"rendered":"

Le nouveau\u00a0circuit\u00a0de commande\u00a0GaN\u00a0en\u00a0demi-pont\u00a0\u00e0\u00a0100\u00a0V\u00a0LT8418\u00a0d\u2019Analog Devices a \u00e9t\u00e9 con\u00e7u pour\u00a0simplifier\u00a0la mise en \u0153uvre des\u00a0transistors \u00e0 effet de champ\u00a0(FET) en nitrure de gallium (GaN)\u00a0en\u00a0conjuguant\u00a0une commande de grille\u00a0robuste, une commutation\u00a0en fr\u00e9quences \u00e9lev\u00e9es\u00a0et une efficacit\u00e9 accrue\u00a0au\u00a0niveau\u00a0syst\u00e8me.   Int\u00e9grant les \u00e9tages de commande sup\u00e9rieur et inf\u00e9rieur, la commande logique\u00a0du driver\u00a0et les protections,\u00a0ce nouveau\u00a0circuit\u00a0peut \u00eatre configur\u00e9 en\u00a0plusieurs\u00a0topologies\u00a0:\u00a0pont complet,\u00a0demi-pont\u00a0synchrone,\u00a0abaisseur (buck), \u00e9l\u00e9vateur (boost)\u00a0ou\u00a0mixte (buck-boost).\u00a0Le […]<\/p>\n","protected":false},"author":36,"featured_media":445101,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[936],"domains":[47],"ppma_author":[1154],"class_list":["post-445100","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-circuits-integres","domains-electronique-eci"],"acf":[],"yoast_head":"Driver GaN commandant les transistors FET en nitrure de gallium...<\/title>\n<meta name=\"description\" content=\"Le nouveau\u00a0circuit\u00a0de commande\u00a0GaN\u00a0en\u00a0demi-pont\u00a0\u00e0\u00a0100\u00a0V\u00a0LT8418\u00a0d\u2019Analog Devices a \u00e9t\u00e9 con\u00e7u pour\u00a0simplifier\u00a0la mise en \u0153uvre...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" 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