{"id":444029,"date":"2024-02-19T09:11:58","date_gmt":"2024-02-19T08:11:58","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?p=444029"},"modified":"2024-02-19T09:11:58","modified_gmt":"2024-02-19T08:11:58","slug":"la-start-up-soctera-ameliore-les-performances-thermiques-des-hemt-de-type-gan","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/la-start-up-soctera-ameliore-les-performances-thermiques-des-hemt-de-type-gan\/","title":{"rendered":"La start-up Soctera am\u00e9liore les performances thermiques des HEMT de type GaN"},"content":{"rendered":"<h3><span style=\"font-size: 16px;\">Soctera , une jeune entreprise bas\u00e9e \u00e0\u00a0<\/span><span style=\"font-size: 16px;\">Ithaca, dans la banlieue de New York <\/span><span style=\"font-size: 16px;\">d\u00e9veloppe des amplificateurs de puissance \u00e0 ondes millim\u00e9triques en nitrure III. La soci\u00e9t\u00e9 a d\u00e9montr\u00e9 des performances thermiques sup\u00e9rieures dans les transistors \u00e0 haute mobilit\u00e9 d&rsquo;\u00e9lectrons (HEMT).<\/span><\/h3>\n<p>Les HEMT, produits \u00e0 l&rsquo;aide d&rsquo;une technique en couches optimis\u00e9e sur le plan thermique, ont pr\u00e9sent\u00e9 une augmentation maximale de la temp\u00e9rature de surface de 59\u00b0C tout en dissipant 10,4 W\/mm.\u00a0Soctera a observ\u00e9 que les HEMT en nitrure de gallium (GaN) typiques atteignent leur limite de temp\u00e9rature de fonctionnement conventionnelle de 225\u00b0C lorsqu&rsquo;ils dissipent environ 5 W\/mm.<\/p>\n<p>Les HEMT \u00e0 couches de Soctera utilisent 20 fois moins de gallium que les HEMT GaN et la performance thermique am\u00e9lior\u00e9e devrait r\u00e9duire les co\u00fbts de dissipation thermique, am\u00e9liorer la fiabilit\u00e9 et augmenter la puissance de sortie maximale dans des applications telles que les 5G et 6G et les r\u00e9seaux de radars de d\u00e9fense, a d\u00e9clar\u00e9 l&rsquo;entreprise.<\/p>\n<h4>Collaboration avec l&rsquo;universit\u00e9 Cornell<\/h4>\n<p>La structure en couches est probablement bas\u00e9e sur les HEMT \u00e0 puits quantique AlN\/GaN\/AlN qui ont fait l&rsquo;objet de recherches \u00e0 l&rsquo;universit\u00e9 de Cornell. M. Hickman a publi\u00e9 en 2018, alors qu&rsquo;il \u00e9tait \u00e9tudiant \u00e0 Cornell, un article sur la tension de claquage \u00e9lev\u00e9e que l&rsquo;on peut obtenir avec de tels dispositifs. Ces dispositifs pr\u00e9sentaient alors une fr\u00e9quence de transition de 161 GHz et une <em>f-max de <\/em>70 GHz.<\/p>\n<p>Les derniers HEMT ont \u00e9t\u00e9 fabriqu\u00e9s pour Soctera au Cornell Nanoscale Facility et le profil de temp\u00e9rature de surface a \u00e9t\u00e9 mesur\u00e9 avec une r\u00e9solution inf\u00e9rieure au micron en utilisant la thermor\u00e9flectance. Les HEMT ont \u00e9t\u00e9 fabriqu\u00e9s sur des plaquettes de 4 pouces par le fabricant de plaquettes \u00e9pitaxi\u00e9es IQE plc, avec lequel Soctera a conclu un partenariat pour le d\u00e9veloppement \u00e0 l&rsquo;\u00e9chelle commerciale.<\/p>\n<p>\u00ab\u00a0La r\u00e9duction de l&rsquo;accumulation de chaleur red\u00e9finit ce qui est possible pour l&rsquo;industrie des communications de haute performance\u00a0\u00bb, a d\u00e9clar\u00e9 Austin Hickman, PDG et cofondateur de Soctera, dans un communiqu\u00e9. \u00ab\u00a0Nous sommes ravis de ces r\u00e9sultats obtenus par des tiers et nous nous effor\u00e7ons \u00e0 pr\u00e9sent d&rsquo;adapter rapidement notre technologie \u00e0 des m\u00e9thodes de production commerciale.<\/p>\n<p>L&rsquo;entreprise a d\u00e9clar\u00e9 qu&rsquo;elle \u00e9tait sur la bonne voie pour mettre en place une fabrication commerciale de bout en bout et qu&rsquo;elle avait commenc\u00e9 la fabrication de HEMT avec une fonderie de GaN approuv\u00e9e par le minist\u00e8re de la d\u00e9fense. Soctera a r\u00e9cemment obtenu un financement de 750 000 USD dans le cadre du concours de pr\u00e9sentation du Defense Business Accelerator.<\/p>\n<p>La technologie est conc\u00e9d\u00e9e sous licence \u00e0 Soctera par l&rsquo;universit\u00e9 de Cornell, o\u00f9 elle a \u00e9t\u00e9 initialement d\u00e9velopp\u00e9e par l&rsquo;\u00e9cole d&rsquo;ing\u00e9nierie \u00e9lectrique et informatique.<\/p>\n<p><a href=\"http:\/\/www.soctera.com\">www.soctera.com<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Soctera , une jeune entreprise bas\u00e9e \u00e0\u00a0Ithaca, dans la banlieue de New York d\u00e9veloppe des amplificateurs de puissance \u00e0 ondes millim\u00e9triques en nitrure III. La soci\u00e9t\u00e9 a d\u00e9montr\u00e9 des performances thermiques sup\u00e9rieures dans les transistors \u00e0 haute mobilit\u00e9 d&rsquo;\u00e9lectrons (HEMT). Les HEMT, produits \u00e0 l&rsquo;aide d&rsquo;une technique en couches optimis\u00e9e sur le plan thermique, ont [&hellip;]<\/p>\n","protected":false},"author":11,"featured_media":443882,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[883],"tags":[3897,3646],"domains":[47],"ppma_author":[1143,3631],"class_list":["post-444029","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-technologies","tag-gan-fr-2","tag-transmission-rf-2-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>La start-up Soctera am\u00e9liore les performances thermiques des H...<\/title>\n<meta name=\"description\" content=\"Soctera a d\u00e9montr\u00e9 des performances thermiques sup\u00e9rieures dans les transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT).\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, 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