{"id":439368,"date":"2023-12-14T19:54:56","date_gmt":"2023-12-14T18:54:56","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=439368"},"modified":"2023-12-14T19:54:56","modified_gmt":"2023-12-14T18:54:56","slug":"ti-etoffe-son-portefeuille-de-composants-en-gan-basse-consommation","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/ti-etoffe-son-portefeuille-de-composants-en-gan-basse-consommation\/","title":{"rendered":"TI \u00e9toffe son portefeuille de composants en GaN basse consommation"},"content":{"rendered":"<h3><span style=\"font-size: 16px;\">Texas Instruments annonce \u00e9toffer son portefeuille de composants en nitrure de gallium (GaN) basse consommation, con\u00e7u pour am\u00e9liorer la puissance volumique, optimiser l\u2019efficacit\u00e9 \u00e9nerg\u00e9tique et r\u00e9duire la taille des appareils \u00e9lectroniques des particuliers ainsi que des syst\u00e8mes industriels CA\/CC.<\/span><\/h3>\n<p>L\u2019ensemble du portefeuille de transistors \u00e0 effet de champ (FET) en GaN avec pilotes de grille int\u00e9gr\u00e9s de TI a vocation \u00e0 relever les d\u00e9fis les plus courants en mati\u00e8re de conception thermique, de mani\u00e8re \u00e0 mieux refroidir les adaptateurs et \u00e0 fournir davantage de puissance dans un format plus compact.<br \/>\nLe nouveau portefeuille de transistors \u00e0 effet de champ en GaN avec pilotes de grille int\u00e9gr\u00e9s, qui inclut les mod\u00e8les\u00a0<a href=\"https:\/\/www.ti.com\/product\/LMG3622?HQS=app-hvp-hv-hvpwrconversion_lmg36xx-pr-pf-lmg3622-eu\">LMG3622<\/a>,\u00a0<a href=\"https:\/\/www.ti.com\/product\/LMG3624?HQS=app-hvp-hv-hvpwrconversion_lmg36xx-pr-pf-lmg3624-eu\">LMG3624<\/a>\u00a0et\u00a0<a href=\"https:\/\/www.ti.com\/product\/LMG3626?HQS=app-hvp-hv-hvpwrconversion_lmg36xx-pr-pf-lmg3626-eu\">LMG3626<\/a>, propose les fonctions de d\u00e9tection de courant les plus pr\u00e9cises du march\u00e9. Il aide ainsi les ing\u00e9nieurs \u00e0 optimiser l\u2019efficacit\u00e9 de leurs syst\u00e8mes en \u00e9liminant la n\u00e9cessit\u00e9 d\u2019y adjoindre une r\u00e9sistance de shuntage externe et en limitant les pertes de puissance associ\u00e9es de 94\u00a0% par rapport \u00e0 un circuit de d\u00e9tection de courant classique, dot\u00e9 de transistors \u00e0 effet de champ en GaN ou en silicium discrets.<\/p>\n<p><strong>Optimiser l\u2019efficacit\u00e9 \u00e9nerg\u00e9tique et simplifier la conception thermique<br \/>\n<\/strong>Les transistors \u00e0 effet de champ en GaN avec pilotes de grille int\u00e9gr\u00e9s de TI acc\u00e9l\u00e8rent la commutation, \u00e9vitant ainsi la surchauffe des adaptateurs. Il est ainsi possible d\u2019atteindre une efficacit\u00e9 sup\u00e9rieure \u00e0 94\u00a0% sur les applications CA\/CC &lt;\u00a075\u00a0W, voire sup\u00e9rieure \u00e0 95\u00a0% sur les applications CA\/CC &gt;\u00a075\u00a0W. Gr\u00e2ce \u00e0 ces nouveaux composants, les ing\u00e9nieurs sont en mesure de diviser par deux la taille d\u2019un adaptateur de puissance type de 67\u00a0W par rapport \u00e0 une solution en silicium.<br \/>\nCe portefeuille de composants est \u00e9galement optimis\u00e9 pour les topologies de conversion de puissance CA\/CC les plus courantes, notamment les convertisseurs \u00e0 transfert indirect quasi r\u00e9sonnants, en demi-pont asym\u00e9trique, les convertisseurs \u00e0 deux inductances, les dispositifs de correction de facteur de puissance \u00e0 p\u00f4le totem et les convertisseurs \u00e0 transfert indirect \u00e0 \u00e9cr\u00eatage actif.<\/p>\n<p><strong>Investir \u00e0 long terme dans la production de composants en nitrure de gallium<br \/>\n<\/strong>TI d\u00e9veloppe depuis plusieurs ann\u00e9es ses capacit\u00e9s de production propres, avec 15\u00a0sites r\u00e9partis dans diverses r\u00e9gions du monde\u00a0: usines de plaquettes de semiconducteurs, d&rsquo;assemblage (notamment par billes de soudure) et d\u2019essai (notamment tests \u00e9lectriques). L\u2019entreprise investit d\u2019ailleurs dans la fabrication des technologies au GaN depuis plus de 10\u00a0ans.<br \/>\nTI compte fabriquer en interne plus de 90\u00a0% de ses produits d\u2019ici 2030, de mani\u00e8re \u00e0 s\u00e9curiser l\u2019approvisionnement de ses clients pour les d\u00e9cennies \u00e0 venir.<\/p>\n<p><a href=\"https:\/\/c212.net\/c\/link\/?t=0&amp;l=en&amp;o=2849181-1&amp;h=2359332189&amp;u=http:\/\/www.ti.com\/&amp;a=TI.com\">TI.com<\/a><\/p>\n<p><a href=\"https:\/\/news.google.com\/publications\/CAAqBwgKMJbcwQswuPfYAw?hl=fr&amp;gl=BE&amp;ceid=BE:fr\">Suivre ECInews sur Google news<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Texas Instruments annonce \u00e9toffer son portefeuille de composants en nitrure de gallium (GaN) basse consommation, con\u00e7u pour am\u00e9liorer la puissance volumique, optimiser l\u2019efficacit\u00e9 \u00e9nerg\u00e9tique et r\u00e9duire la taille des appareils \u00e9lectroniques des particuliers ainsi que des syst\u00e8mes industriels CA\/CC. L\u2019ensemble du portefeuille de transistors \u00e0 effet de champ (FET) en GaN avec pilotes de grille [&hellip;]<\/p>\n","protected":false},"author":36,"featured_media":439370,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[886],"tags":[3897],"domains":[47],"ppma_author":[1154],"class_list":["post-439368","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news-fr","tag-gan-fr-2","domains-electronique-eci"],"acf":[],"yoast_head":"<title>TI \u00e9toffe son portefeuille de composants en GaN basse consomma...<\/title>\n<meta name=\"description\" content=\"Texas Instruments annonce \u00e9toffer son portefeuille de composants en nitrure de gallium (GaN) basse consommation, con\u00e7u pour am\u00e9liorer la puissance...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" 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