{"id":435321,"date":"2023-10-24T20:03:37","date_gmt":"2023-10-24T18:03:37","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?p=435321"},"modified":"2023-10-24T20:39:21","modified_gmt":"2023-10-24T18:39:21","slug":"les-mosfet-automobiles-sont-dotes-dun-nouveau-boitier-innovant-pour-plus-de-performances","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/les-mosfet-automobiles-sont-dotes-dun-nouveau-boitier-innovant-pour-plus-de-performances\/","title":{"rendered":"Des MOSFET automobiles dot\u00e9s d&rsquo;un nouveau bo\u00eetier pour plus de performances"},"content":{"rendered":"<h3><span style=\"font-size: 16px;\">Toshiba a lanc\u00e9 une paire de MOSFET de puissance \u00e0 canal N de 40 V r\u00e9pondant aux crit\u00e8res de qualit\u00e9 automobile, bas\u00e9s sur leur dernier processus U-MOS IX-H.<\/span><\/h3>\n<p>Les applications automobiles critiques en mati\u00e8re de s\u00e9curit\u00e9, telles que les syst\u00e8mes de direction, de freinage et de conduite autonome, n\u00e9cessitent un plus grand nombre de dispositifs\u00a0 afin de r\u00e9pondre aux exigences de redondance. Ainsi un MOSFET de puissance avec une densit\u00e9 de courant \u00e9lev\u00e9e s&rsquo;impose en raison des contraintes d&rsquo;encombrement dans l&rsquo;\u00e9quipement. Les deux nouveaux MOSFET &#8211; (1) XPJR6604PB et (2) XPJ1R004PB &#8211; utilisent un nouveau bo\u00eetier S-TOGL\u2122 qui offre des avantages dans les applications automobiles, notamment son encombrement de 7,0- \u00d7 8,44- \u00d7 2,3-mm, compar\u00e9e au bo\u00eetier DPAK+ de 6,5 \u00d7 9,5 mm de Thoshiba .<\/p>\n<p>les deux composants ont une valeur VDSS de 40V. Si le premier\u00a0 d\u00e9livre un courant de drain continu (ID) de 200 A, le second offre 160 A. Ils sont tous les deux con\u00e7us pour un courant impulsionnel (IDP) trois fois sup\u00e9rieur \u00e0 cette valeur, soit 600 A et 480 A. La valeur de 200 A est sup\u00e9rieure \u00e0 celle atteinte par le bo\u00eetier DPAK+.\u00a0 Les produits sont sans bores internes, avec une structure multibroche pour les conducteurs de source, ce qui diminue consid\u00e9rablement la r\u00e9sistance du bo\u00eetier.<\/p>\n<p><strong>Une combinaison parfaite<\/strong><\/p>\n<p>La combinaison du bo\u00eetier S-TOGL\u2122 avec le proc\u00e9d\u00e9 U-MOS IX-H de Toshiba donne au XPJR6604PB une valeur de r\u00e9sistance drain\/source \u00e0 l&rsquo;&amp;t&amp; passant t (RDS<sub>(ON)<\/sub>) de seulement 0,66 m\u03a9 (XPJ1R004PB = 1,0 m\u03a9), ce qui repr\u00e9sente une r\u00e9duction d&rsquo;environ 11 % par rapport au bo\u00eetier TO-220SM(W) existant de Toshiba, le TKR74F04PB. Par rapport \u00e0 ce dispositif, l&#8217;emprise sur le circuit imprim\u00e9 a \u00e9t\u00e9 r\u00e9duite d&rsquo;environ 55% tout en conservant les caract\u00e9ristiques de r\u00e9sistance thermique canal\/bo\u00eetier (Zth<sub>(ch-c)<\/sub>) &#8211; de 0.4\u00baC\/W pour le premier et 0.67\u00baC\/W pour le second.<\/p>\n<p>De nombreuses applications automobiles sont bas\u00e9es sur des environnements extr\u00eamement difficiles, de sorte que la fiabilit\u00e9 des points de soudure de montage en surface est une consid\u00e9ration critique. Le bo\u00eetier S-TOGL\u2122 de Toshiba utilise des fils en forme d&rsquo;aile de mouette qui r\u00e9duisent les contraintes de montage, am\u00e9liorant ainsi la fiabilit\u00e9 des soudures.<\/p>\n<p>Qualifi\u00e9s AEC-Q101 ces Mosfet sont capables de fonctionner \u00e0 des temp\u00e9ratures de canal (<sub>Tch<\/sub>) allant jusqu&rsquo;\u00e0 175\u00baC.<\/p>\n<p>Ces produits sont d\u00e8s \u00e0 pr\u00e9sent disponibles<\/p>\n<p><a href=\"https:\/\/toshiba.semicon-storage.com\/eu\/semiconductor\/product\/mosfets\/12v-300v-mosfets\/detail.XPJ1R004PB.html\">MOSFET &#8211; (1) XPJR6604PB et (2) XPJ1R004PB<\/a><\/p>\n<p><a href=\"https:\/\/news.google.com\/publications\/CAAqBwgKMJbcwQswuPfYAw?hl=fr&amp;gl=BE&amp;ceid=BE:fr\" target=\"news.google.com\" rel=\"noopener\">Suivre ECInews sur Google news<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Les nouveaux MOSFET offrent une r\u00e9sistance \u00e0 l&rsquo;enclenchement am\u00e9lior\u00e9e et une taille r\u00e9duite dans un bo\u00eetier qui utilise des fils en aile de mouette pour r\u00e9duire les contraintes de montage.<\/p>\n","protected":false},"author":2,"featured_media":435267,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[4986,1640,4985,4987],"domains":[47],"ppma_author":[3682],"class_list":["post-435321","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-aec-q101-fr","tag-automobile","tag-mosfets-fr","tag-toshiba-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Des MOSFET automobiles dot\u00e9s d&#039;un nouveau bo\u00eetier pour plus d...<\/title>\n<meta name=\"description\" content=\"MOSFET pour les applications critiques de s\u00e9curit\u00e9 dans l&#039;automobile: syst\u00e8mes de direction, de freinage et de conduite autonome\" \/>\n<meta name=\"robots\" content=\"index, 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