{"id":435047,"date":"2023-10-20T23:07:02","date_gmt":"2023-10-20T21:07:02","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=435047"},"modified":"2023-10-20T23:07:02","modified_gmt":"2023-10-20T21:07:02","slug":"mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/","title":{"rendered":"MOSFET \u00e0 canal N \u00e0 mode d\u2019appauvrissement de 800 V dans un bo\u00eetier SOT-223-2L modifi\u00e9"},"content":{"rendered":"\n\n\n
\n\n\n\n
\n

Littelfuse, Inc<\/span><\/a>. annonce le lancement du CPC3981Z, un MOSFET \u00e0 canal N \u00e0 mode d’appauvrissement de 800 V, 100 mA et 45 Ohm en bo\u00eetier SOT-223-2L modifi\u00e9.<\/span><\/h3>\n

\nCompar\u00e9 \u00e0 un bo\u00eetier SOT-223 standard, le bo\u00eetier SOT-223-2L de ce nouveau produit est d\u00e9pourvu de broche centrale. Cette particularit\u00e9 fait passer l\u2019espacement entre les broches drain-grille de 1,386 \u00e0 plus de 4 millim\u00e8tres. La ligne de fuite \u00e9tendue profite aux applications haute tension, telles que les alimentations \u00e0 d\u00e9coupage (SMPS) ou les circuits de d\u00e9marrage \u00e0 correction du facteur de puissance (PFC), car les concepteurs peuvent se passer de co\u00fbteux rev\u00eatements ou enrobages conformes.
\nLe point fort du CPC3981Z est son bo\u00eetier SOT-223-2L modifi\u00e9 qui permet aux concepteurs d\u2019obtenir la ligne de fuite accrue requise pour les applications haute tension avec un dispositif compact. Gr\u00e2ce \u00e0 sa ligne de fuite sup\u00e9rieure, le CPC3981Z accro\u00eet la robustesse des circuits et permet de r\u00e9duire les co\u00fbts. La tension de blocage nominale de 800 V du CPC3981Z en fait un choix id\u00e9al pour les applications industrielles, \u00e9nerg\u00e9tiques, de t\u00e9l\u00e9communications et d\u2019\u00e9clairage LED.
\nLa distance accrue entre les broches du MOSFET \u00e0 mode d’appauvrissement simplifie la gestion de l\u2019isolation des alimentations \u00e0 tension d\u2019entr\u00e9e \u00e9lev\u00e9e et permet d\u2019obtenir des cartes de circuits imprim\u00e9es compactes.<\/p>\n

\u00ab\u00a0Littelfuse est fi\u00e8re de proposer l\u2019une des gammes de MOSFET \u00e0 mode d\u2019appauvrissement les plus compl\u00e8tes du secteur et le CPC3981Z vient renforcer notre position\u00a0\u00bb, se f\u00e9licite Mark P.\u00a0Smith, Director of Product Management, Integrated Circuits & MCU chez Littelfuse. \u00ab\u00a0Ce nouvel ajout \u00e0 notre gamme de MOSFET \u00e0 mode d\u2019appauvrissement \u00e9conomique propos\u00e9 dans un nouveau bo\u00eetier SOT-223-2L est une excellente solution pour les applications exigeant des plages de tension d\u2019entr\u00e9e \u00e9lev\u00e9es pouvant atteindre 800\u00a0V.\u00a0\u00bb<\/p>\n

littelfuse.com.<\/a>\u00a0<\/p>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n<\/td>\n<\/tr>\n<\/tbody>\n<\/table>\n

 <\/p>\n

Suivre ECInews sur Google news<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

Littelfuse, Inc. annonce le lancement du CPC3981Z, un MOSFET \u00e0 canal N \u00e0 mode d’appauvrissement de 800 V, 100 mA et 45 Ohm en bo\u00eetier SOT-223-2L modifi\u00e9. Compar\u00e9 \u00e0 un bo\u00eetier SOT-223 standard, le bo\u00eetier SOT-223-2L de ce nouveau produit est d\u00e9pourvu de broche centrale. Cette particularit\u00e9 fait passer l\u2019espacement entre les broches drain-grille de […]<\/p>\n","protected":false},"author":36,"featured_media":435048,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[1164],"domains":[47],"ppma_author":[1154],"class_list":["post-435047","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-composants-de-puissance","domains-electronique-eci"],"acf":[],"yoast_head":"MOSFET \u00e0 canal N \u00e0 mode d\u2019appauvrissement de 800 V dans un ...<\/title>\n<meta name=\"description\" content=\"Littelfuse, Inc. annonce le lancement du CPC3981Z, un MOSFET \u00e0 canal N \u00e0 mode d'appauvrissement de 800 V, 100 mA et 45 Ohm en bo\u00eetier SOT-223-2L modifi\u00e9.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/435047\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFET \u00e0 canal N \u00e0 mode d\u2019appauvrissement de 800 V dans un bo\u00eetier SOT-223-2L modifi\u00e9\" \/>\n<meta property=\"og:description\" content=\"Littelfuse, Inc. annonce le lancement du CPC3981Z, un MOSFET \u00e0 canal N \u00e0 mode d'appauvrissement de 800 V, 100 mA et 45 Ohm en bo\u00eetier SOT-223-2L modifi\u00e9.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/435047\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2023-10-20T21:07:02+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2023\/10\/ECI2029_Littelfuse.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"400\" \/>\n\t<meta property=\"og:image:height\" content=\"340\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Alain Dieul\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Alain Dieul\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. reading time\" \/>\n\t<meta name=\"twitter:data2\" content=\"2 minutes\" \/>\n<script type=\"application\/ld+json\" class=\"yoast-schema-graph\">{\"@context\":\"https:\/\/schema.org\",\"@graph\":[{\"@type\":\"Article\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/#article\",\"isPartOf\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/\"},\"author\":{\"name\":\"Alain Dieul\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/e4387676ad67ce722325c7832f3c3762\"},\"headline\":\"MOSFET \u00e0 canal N \u00e0 mode d\u2019appauvrissement de 800 V dans un bo\u00eetier SOT-223-2L modifi\u00e9\",\"datePublished\":\"2023-10-20T21:07:02+00:00\",\"dateModified\":\"2023-10-20T21:07:02+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/\"},\"wordCount\":342,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\"},\"keywords\":[\"Composants de puissance\"],\"articleSection\":[\"Nouveaux produits\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/\",\"url\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/\",\"name\":\"MOSFET \u00e0 canal N \u00e0 mode d\u2019appauvrissement de 800 V dans un bo\u00eetier SOT-223-2L modifi\u00e9 -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#website\"},\"datePublished\":\"2023-10-20T21:07:02+00:00\",\"dateModified\":\"2023-10-20T21:07:02+00:00\",\"description\":\"Littelfuse, Inc. annonce le lancement du CPC3981Z, un MOSFET \u00e0 canal N \u00e0 mode d'appauvrissement de 800 V, 100 mA et 45 Ohm en bo\u00eetier SOT-223-2L modifi\u00e9.\",\"breadcrumb\":{\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/test.eenewseurope.com\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"MOSFET \u00e0 canal N \u00e0 mode d\u2019appauvrissement de 800 V dans un bo\u00eetier SOT-223-2L modifi\u00e9\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/fr\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/fr\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/fr\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/e4387676ad67ce722325c7832f3c3762\",\"name\":\"Alain Dieul\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/image\/736120675699dbbf0f0f282b9a9cfb75\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/bc93b056d07515be5b8eecd4acf49c5c?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/bc93b056d07515be5b8eecd4acf49c5c?s=96&d=mm&r=g\",\"caption\":\"Alain Dieul\"},\"sameAs\":[\"http:\/\/ECINews\"]}]}<\/script>","yoast_head_json":{"title":"MOSFET \u00e0 canal N \u00e0 mode d\u2019appauvrissement de 800 V dans un ...","description":"Littelfuse, Inc. annonce le lancement du CPC3981Z, un MOSFET \u00e0 canal N \u00e0 mode d'appauvrissement de 800 V, 100 mA et 45 Ohm en bo\u00eetier SOT-223-2L modifi\u00e9.","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/435047\/","og_locale":"fr_FR","og_type":"article","og_title":"MOSFET \u00e0 canal N \u00e0 mode d\u2019appauvrissement de 800 V dans un bo\u00eetier SOT-223-2L modifi\u00e9","og_description":"Littelfuse, Inc. annonce le lancement du CPC3981Z, un MOSFET \u00e0 canal N \u00e0 mode d'appauvrissement de 800 V, 100 mA et 45 Ohm en bo\u00eetier SOT-223-2L modifi\u00e9.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/435047\/","og_site_name":"EENewsEurope","article_published_time":"2023-10-20T21:07:02+00:00","og_image":[{"width":400,"height":340,"url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2023\/10\/ECI2029_Littelfuse.jpg","type":"image\/jpeg"}],"author":"Alain Dieul","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Alain Dieul","Est. reading time":"2 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/#article","isPartOf":{"@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/"},"author":{"name":"Alain Dieul","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/e4387676ad67ce722325c7832f3c3762"},"headline":"MOSFET \u00e0 canal N \u00e0 mode d\u2019appauvrissement de 800 V dans un bo\u00eetier SOT-223-2L modifi\u00e9","datePublished":"2023-10-20T21:07:02+00:00","dateModified":"2023-10-20T21:07:02+00:00","mainEntityOfPage":{"@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/"},"wordCount":342,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#organization"},"keywords":["Composants de puissance"],"articleSection":["Nouveaux produits"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/","url":"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/","name":"MOSFET \u00e0 canal N \u00e0 mode d\u2019appauvrissement de 800 V dans un bo\u00eetier SOT-223-2L modifi\u00e9 -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#website"},"datePublished":"2023-10-20T21:07:02+00:00","dateModified":"2023-10-20T21:07:02+00:00","description":"Littelfuse, Inc. annonce le lancement du CPC3981Z, un MOSFET \u00e0 canal N \u00e0 mode d'appauvrissement de 800 V, 100 mA et 45 Ohm en bo\u00eetier SOT-223-2L modifi\u00e9.","breadcrumb":{"@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.ecinews.fr\/fr\/mosfet-a-canal-n-a-mode-dappauvrissement-de-800-v-dans-un-boitier-sot-223-2l-modifie\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/test.eenewseurope.com\/fr\/"},{"@type":"ListItem","position":2,"name":"MOSFET \u00e0 canal N \u00e0 mode d\u2019appauvrissement de 800 V dans un bo\u00eetier SOT-223-2L modifi\u00e9"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/fr\/#website","url":"https:\/\/www.eenewseurope.com\/fr\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/fr\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/fr\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/fr\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/e4387676ad67ce722325c7832f3c3762","name":"Alain Dieul","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/image\/736120675699dbbf0f0f282b9a9cfb75","url":"https:\/\/secure.gravatar.com\/avatar\/bc93b056d07515be5b8eecd4acf49c5c?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/bc93b056d07515be5b8eecd4acf49c5c?s=96&d=mm&r=g","caption":"Alain Dieul"},"sameAs":["http:\/\/ECINews"]}]}},"authors":[{"term_id":1154,"user_id":36,"is_guest":0,"slug":"alain-dieul","display_name":"Alain Dieul","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/bc93b056d07515be5b8eecd4acf49c5c?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/435047"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/36"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=435047"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/435047\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/435048"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=435047"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=435047"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=435047"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=435047"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=435047"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}