{"id":429514,"date":"2023-08-14T15:40:52","date_gmt":"2023-08-14T13:40:52","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?p=429514"},"modified":"2023-08-14T15:42:08","modified_gmt":"2023-08-14T13:42:08","slug":"transistor-neuromorphique-rapide-a-double-couche-electrique-pour-lia","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/transistor-neuromorphique-rapide-a-double-couche-electrique-pour-lia\/","title":{"rendered":"Transistor neuromorphique rapide \u00e0 double couche \u00e9lectrique pour l’IA"},"content":{"rendered":"

Une \u00e9quipe compos\u00e9e de chercheurs du National Institute for Materials Science (NIMS)<\/a> et de l’Universit\u00e9 des sciences de Tokyo a mis au point le transistor \u00e9lectrique \u00e0 double couche le plus rapide en utilisant une couche mince de c\u00e9ramique hautement conductrice d’ions et une couche mince de diamant.<\/h2>\n

Ce transistor peut \u00eatre utilis\u00e9 pour d\u00e9velopper des dispositifs d’intelligence artificielle de pointe \u00e0 haute vitesse et \u00e0 faible consommation d’\u00e9nergie, avec un large \u00e9ventail d’applications, notamment la pr\u00e9diction d’\u00e9v\u00e9nements futurs et la reconnaissance\/d\u00e9termination de mod\u00e8les dans les images (comme la reconnaissance faciale), les voix et les odeurs.<\/p>\n

Un transistor \u00e0 double couche \u00e9lectrique fonctionne comme un interrupteur en utilisant les changements de r\u00e9sistance \u00e9lectrique caus\u00e9s par la charge et la d\u00e9charge d’une double couche \u00e9lectrique form\u00e9e \u00e0 l’interface entre l’\u00e9lectrolyte et le semiconducteur. Comme ce transistor est capable d’imiter la r\u00e9ponse \u00e9lectrique des neurones c\u00e9r\u00e9braux humains (c’est-\u00e0-dire qu’il agit comme un transistor neuromorphique), son utilisation dans les dispositifs d’intelligence artificielle est potentiellement prometteuse. Cependant, les transistors \u00e9lectriques \u00e0 double couche existants sont lents \u00e0 passer de l’\u00e9tat de marche \u00e0 l’\u00e9tat d’arr\u00eat. Le temps de transition typique varie de plusieurs centaines de microsecondes \u00e0 10 millisecondes. Il est donc souhaitable de d\u00e9velopper des transistors \u00e9lectriques \u00e0 double couche plus rapides.<\/p>\n

L’\u00e9quipe de recherche a mis au point un transistor \u00e0 double couche \u00e9lectrique en d\u00e9posant des couches minces de c\u00e9ramique (couche mince de zircone poreuse stabilis\u00e9e \u00e0 l’yttrium) et de diamant avec une grande pr\u00e9cision \u00e0 l’aide d’un laser puls\u00e9, formant ainsi une double couche \u00e9lectrique \u00e0 l’interface c\u00e9ramique\/diamant. La couche mince de zircone est capable d’adsorber de grandes quantit\u00e9s d’eau dans ses nanopores et de permettre aux ions d’hydrog\u00e8ne de l’eau de migrer facilement \u00e0 travers elle, ce qui permet de charger et de d\u00e9charger rapidement la double couche \u00e9lectrique. Cet effet de double couche \u00e9lectrique permet au transistor de fonctionner tr\u00e8s rapidement. L’\u00e9quipe a mesur\u00e9 la vitesse de fonctionnement du transistor en lui appliquant une tension puls\u00e9e et a constat\u00e9 qu’il fonctionnait 8,5 fois plus vite que les transistors \u00e9lectriques \u00e0 double couche existants, \u00e9tablissant ainsi un nouveau record mondial. L’\u00e9quipe a \u00e9galement confirm\u00e9 la capacit\u00e9 de ce transistor \u00e0 convertir avec pr\u00e9cision les formes d’onde d’entr\u00e9e en de nombreuses formes d’onde de sortie diff\u00e9rentes – une condition pr\u00e9alable pour que les transistors soient compatibles avec les dispositifs d’IA neuromorphique.<\/p>\n

Le projet de recherche a permis de mettre au point une nouvelle technologie de couches minces en c\u00e9ramique capable de charger et de d\u00e9charger rapidement une double couche \u00e9lectrique de plusieurs nanom\u00e8tres d’\u00e9paisseur. Il s’agit d’une avanc\u00e9e majeure dans les efforts visant \u00e0 cr\u00e9er des composants pratiques, \u00e0 grande vitesse et \u00e9conomes en \u00e9nergie, assist\u00e9s par l’IA. Ces dispositifs, associ\u00e9s \u00e0 divers capteurs (montres intelligentes, cam\u00e9ras de surveillance et capteurs audio, par exemple), devraient offrir des outils utiles dans divers secteurs, notamment la m\u00e9decine, la pr\u00e9vention des catastrophes, l’industrie manufacturi\u00e8re et la s\u00e9curit\u00e9.<\/p>\n

Image : (\u00e0 gauche) Sch\u00e9ma du transistor \u00e9lectrique \u00e0 double couche d\u00e9velopp\u00e9 dans le cadre de ce projet de recherche. (\u00e0 droite) Ce transistor a permis d’atteindre une vitesse d’op\u00e9ration neuromorphique nettement sup\u00e9rieure \u00e0 celle des transistors \u00e9lectriques \u00e0 double couche existants. Cr\u00e9dit Institut national de la science des mat\u00e9riaux Takashi Tsuchiya.<\/em><\/p>\n

La recherche a \u00e9t\u00e9 publi\u00e9e dans Materials Today Advances : https:\/\/doi.org\/10.1016\/j.mtadv.2023.100393<\/a>.<\/p>\n","protected":false},"excerpt":{"rendered":"

La technologie peut \u00eatre utilis\u00e9e pour mettre au point des dispositifs d’intelligence artificielle de pointe plus rapides, \u00e9conomes en \u00e9nergie et polyvalents, avec un large \u00e9ventail d’applications.<\/p>\n","protected":false},"author":34,"featured_media":429133,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[883],"tags":[2198,4371,1103],"domains":[47],"ppma_author":[3682,1153],"class_list":["post-429514","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-technologies","tag-ia","tag-neuromorphique","tag-transistor","domains-electronique-eci"],"acf":[],"yoast_head":"Transistor neuromorphique rapide \u00e0 double couche \u00e9lectrique p...<\/title>\n<meta name=\"description\" content=\"La technologie des transistors peut \u00eatre utilis\u00e9e pour d\u00e9velopper des dispositifs d'IA de pointe plus rapides, 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