{"id":427213,"date":"2023-07-16T12:23:31","date_gmt":"2023-07-16T10:23:31","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?p=427213"},"modified":"2023-07-17T09:09:56","modified_gmt":"2023-07-17T07:09:56","slug":"st-elargit-les-options-de-boitiers-de-ses-gan-de-puissance","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/st-elargit-les-options-de-boitiers-de-ses-gan-de-puissance\/","title":{"rendered":"ST \u00e9largit les options de bo\u00eetiers de ses GaN de puissance"},"content":{"rendered":"<h4>STMicroelectronics \u00e9largit les options de packaging de ses transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique PowerGaN HEMT \u00e0 mode am\u00e9lior\u00e9 en lan\u00e7ant la production en volume.<\/h4>\n<p>Les transistors de puissance GaN de ST sont destin\u00e9s \u00e0 des applications telles que les adaptateurs secteur, les chargeurs, les syst\u00e8mes d&rsquo;\u00e9clairage, les alimentations industrielles, les applications d&rsquo;\u00e9nergie renouvelable et l&rsquo;\u00e9lectrification automobile.<\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/stmicroelectronics-introduces-first-powergan-products\/\">STMicroelectronics pr\u00e9sente ses premiers produits PowerGaN<\/a><\/li>\n<\/ul>\n<p>Les deux premiers produits de la famille, le SGT120R65AL et le SGT65R65AL, sont des composants G-HEMT normalement Off de 650V qualifi\u00e9s pour l&rsquo;industrie, dans un bo\u00eetier PowerFLAT 5&#215;6 HV CMS. Ils ont un courant nominal de 15A et 25A, respectivement, avec une r\u00e9sistance typique \u00e0 l&rsquo;enclenchement (RDS(on)) de 75m\u03a9 et 49m\u03a9 \u00e0 25\u00b0C.<\/p>\n<p>La charge totale de la grille de 3nC et 5,4nC et les faibles capacit\u00e9s parasites garantissent des pertes d&rsquo;\u00e9nergie minimales \u00e0 l&rsquo;allumage et \u00e0 l&rsquo;extinction, et une quatri\u00e8me connexion de source Kelvin permet d&rsquo;optimiser le pilotage de la grille. Outre la r\u00e9duction de la taille et du poids des blocs d&rsquo;alimentation et des adaptateurs, les deux transistors GaN offrent un meilleur rendement, une temp\u00e9rature de fonctionnement plus basse et une dur\u00e9e de vie plus longue.<\/p>\n<p>Dans les mois \u00e0 venir, ST pr\u00e9sentera de nouvelles variantes PowerGaN pour les composants qualifi\u00e9s pour l&rsquo;automobile, ainsi que des options de bo\u00eetiers de puissance suppl\u00e9mentaires, notamment PowerFLAT 8&#215;8 DSC et LFPAK 12&#215;12 pour les applications de haute puissance.<\/p>\n<p>Les transistors HEMT GaN ayant la m\u00eame tension de claquage et le m\u00eame RDS(on) que les alternatives au silicium ont une charge de grille totale et des capacit\u00e9s parasites plus faibles, avec une charge de r\u00e9cup\u00e9ration inverse nulle. Ces propri\u00e9t\u00e9s augmentent l&rsquo;efficacit\u00e9 et am\u00e9liorent les performances de commutation, permettant une fr\u00e9quence de commutation plus \u00e9lev\u00e9e qui autorise des composants passifs plus petits, augmentant ainsi la densit\u00e9 de puissance. Les applications peuvent donc devenir plus petites tout en \u00e9tant plus performantes.<\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/qpt-uses-ai-to-boost-gan-performance-to-20mhz\/\">QPT utilise l&rsquo;IA pour augmenter la performance du GaN jusqu&rsquo;\u00e0 20 MHz<\/a><\/li>\n<\/ul>\n<p>\u00c0 l&rsquo;avenir, le GaN devrait \u00e9galement permettre de nouvelles topologies de conversion de puissance \u00e0 des fr\u00e9quences plus \u00e9lev\u00e9es qui am\u00e9lioreront encore l&rsquo;efficacit\u00e9 et r\u00e9duiront les pertes de puissance. Pour r\u00e9f\u00e9rence, le fabricant britannique GaN Systems vient de signer un accord avec la start-up britannique QPT pour faire fonctionner ses transistors GaN \u00e0 des fr\u00e9quences allant jusqu&rsquo;\u00e0 20 MHz.<\/p>\n<p>ST dispose d&rsquo;une capacit\u00e9 de production \u00e9lev\u00e9e pour les produits discrets PowerGaN afin de r\u00e9pondre \u00e0 la demande des clients qui souhaitent passer tr\u00e8s rapidement \u00e0 la fabrication en volume. Les <a href=\"https:\/\/estore.st.com\/en\/sgt120r65al-cpn.html?icmp=tt33967_gl_pron_jul2023\">SGT120R65AL<\/a> et <a href=\"https:\/\/estore.st.com\/en\/sgt65r65al-cpn.html?icmp=tt33967_gl_pron_jul2023\">SGT65R65AL<\/a> en PowerFLAT 5&#215;6 HV sont disponibles d\u00e8s maintenant, \u00e0 partir de 2,60 $ (SGT120R65AL) et 5,00 $ (SGT65R65AL) pour des commandes par 100 pi\u00e8ces.<\/p>\n<p><a href=\"http:\/\/www.st.com\/g-hemt-gan-transistors\">www.st.com\/g-hemt-gan-transistors<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>STMicroelectronics \u00e9largit les options de packaging de ses transistors \u00e0 haute mobilit\u00e9 \u00e9lectronique PowerGaN HEMT \u00e0 mode am\u00e9lior\u00e9 en lan\u00e7ant la production en volume. Les transistors de puissance GaN de ST sont destin\u00e9s \u00e0 des applications telles que les adaptateurs secteur, les chargeurs, les syst\u00e8mes d&rsquo;\u00e9clairage, les alimentations industrielles, les applications d&rsquo;\u00e9nergie renouvelable et l&rsquo;\u00e9lectrification [&hellip;]<\/p>\n","protected":false},"author":34,"featured_media":427196,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[880],"tags":[4100,3897,3718],"domains":[47],"ppma_author":[1153,3640],"class_list":["post-427213","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-actualites-economiques","tag-auromobile","tag-gan-fr-2","tag-st","domains-electronique-eci"],"acf":[],"yoast_head":"<title>ST \u00e9largit les options de bo\u00eetiers de ses GaN de puissance ...<\/title>\n<meta name=\"description\" content=\"Les transistors GaN de STpower sont 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