{"id":424080,"date":"2023-06-10T10:28:26","date_gmt":"2023-06-10T08:28:26","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=424080"},"modified":"2023-06-10T10:28:26","modified_gmt":"2023-06-10T08:28:26","slug":"composants-hemt-au-nitrure-de-gallium-icegan-650-v","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/","title":{"rendered":"Composants HEMT au nitrure de Gallium ICeGaN 650 V"},"content":{"rendered":"<h2>La soci\u00e9t\u00e9 de semi-conducteurs fabless clean-tech <a href=\"https:\/\/camgandevices.com\/\">Cambridge GaN Devices (CGD)<\/a> a lanc\u00e9 la deuxi\u00e8me s\u00e9rie de sa famille de composants HEMT au nitrure de Gallium ICeGaN 650 V<\/h2>\n<p>&nbsp;<\/p>\n<p>Les HEMT ICeGaN de la s\u00e9rie H2 utilisent l&rsquo;interface de porte intelligente de CGD qui \u00e9limine pratiquement les faiblesses typiques e-mode de la technologie GaN, offrant une robustesse aux surtensions consid\u00e9rablement am\u00e9lior\u00e9e, un seuil d&rsquo;immunit\u00e9 au bruit plus \u00e9lev\u00e9, la suppression de dV\/dt et une protection ESD. Comme les composants de la g\u00e9n\u00e9ration pr\u00e9c\u00e9dente, les nouveaux transistors ICeGaN 650 V H2 sont pilot\u00e9s de la m\u00eame mani\u00e8re que les MOSFET Si, ce qui \u00e9limine le besoin de circuits complexes et gourmands en \u00e9nergie, en utilisant \u00e0 la place des pilotes de grille disponibles dans le commerce. Enfin, les HEMT H2 ICeGaN pr\u00e9sentent un Q<sub>G<\/sub> 10x inf\u00e9rieur \u00e0 celui des composants en silicium et un Q<sub>OSS<\/sub> 5x fois inf\u00e9rieur, ce qui permet aux HEMT H2 ICeGaN de r\u00e9duire consid\u00e9rablement les pertes de commutation \u00e0 des fr\u00e9quences de commutation \u00e9lev\u00e9es, ce qui r\u00e9duit la taille et le poids. Cela se traduit par des performances d&rsquo;efficacit\u00e9 de pointe, 2 % sup\u00e9rieures \u00e0 celles des meilleurs MOSFET Si de l&rsquo;industrie dans les applications SMPS.<\/p>\n<p>\u00ab\u00a0CGD a \u00e9tabli un leadership innovant avec la s\u00e9rie H2 ICeGaN. Des recherches ind\u00e9pendantes men\u00e9es par Virginia Tech ont d\u00e9montr\u00e9 que la technologie ICeGaN permettait les composants GaN les plus robustes de l&rsquo;industrie, en termes de facilit\u00e9 d&rsquo;utilisation, et ils peuvent \u00eatre pilot\u00e9s comme un MOSFET silicium standard, de sorte que la courbe d&rsquo;apprentissage qui peut ralentir l&rsquo;acceptation par le march\u00e9 est \u00e9limin\u00e9e. L&rsquo;efficacit\u00e9 du GaN est bien connue et l&rsquo;ICeGaN est impressionnant sur toute la plage de charge.\u00a0\u00bb d\u00e9clare Giorgia longobardi | CEO &amp; Co-fondatrice de CGD.<\/p>\n<h3>Un circuit NL innovant<\/h3>\n<p>La s\u00e9rie ICeGaN H2 est dot\u00e9e d&rsquo;un circuit NL innovant, int\u00e9gr\u00e9 sur la puce \u00e0 c\u00f4t\u00e9 du commutateur GaN, ce qui r\u00e9duit les pertes de puissance \u00e0 un niveau record. Une structure de blocage de courant avanc\u00e9e avec Miller Clamp int\u00e9gr\u00e9 &#8211; \u00e9galement sur puce &#8211; \u00e9limine le besoin de tensions de grille n\u00e9gatives, permettant une v\u00e9ritable coupure \u00e0 z\u00e9ro volt et am\u00e9liorant les performances R<sub>DS(ON) <\/sub>dynamiques. Ces transistors HEMT GaN monopuce e-mode (normalement d\u00e9sactiv\u00e9) comprennent une interface int\u00e9gr\u00e9e monolithique et un circuit de protection pour une fiabilit\u00e9 de grille et une simplicit\u00e9 de conception in\u00e9gal\u00e9es. Enfin, une fonction Current Sense r\u00e9duit la dissipation de puissance et permet une connexion directe \u00e0 la terre pour un refroidissement optimis\u00e9 et la protection EMI.<\/p>\n<p><strong>\u00a0<\/strong><\/p>\n<p><a title=\"https:\/\/camgandevices.com\" href=\"https:\/\/camgandevices.com\">https:\/\/camgandevices.com<\/a><\/p>\n<p><a href=\"https:\/\/news.google.com\/publications\/CAAqBwgKMJbcwQswuPfYAw?hl=fr&amp;gl=BE&amp;ceid=BE:fr\">Suivre ECInews sur Google news<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>La soci\u00e9t\u00e9 de semi-conducteurs fabless clean-tech Cambridge GaN Devices (CGD) a lanc\u00e9 la deuxi\u00e8me s\u00e9rie de sa famille de composants HEMT au nitrure de Gallium ICeGaN 650 V &nbsp; Les HEMT ICeGaN de la s\u00e9rie H2 utilisent l&rsquo;interface de porte intelligente de CGD qui \u00e9limine pratiquement les faiblesses typiques e-mode de la technologie GaN, offrant [&hellip;]<\/p>\n","protected":false},"author":36,"featured_media":424081,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[1164],"domains":[47],"ppma_author":[1154],"class_list":["post-424080","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-composants-de-puissance","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Composants HEMT au nitrure de Gallium ICeGaN 650 V ...<\/title>\n<meta name=\"description\" content=\"Cambridge GaN Devices (CGD) a lanc\u00e9 la deuxi\u00e8me s\u00e9rie de sa famille de composants HEMT au nitrure de Gallium ICeGaN 650 V.\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/424080\/\" \/>\n<meta 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V\",\"datePublished\":\"2023-06-10T08:28:26+00:00\",\"dateModified\":\"2023-06-10T08:28:26+00:00\",\"mainEntityOfPage\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/\"},\"wordCount\":476,\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\"},\"keywords\":[\"Composants de puissance\"],\"articleSection\":[\"Nouveaux produits\"],\"inLanguage\":\"fr-FR\"},{\"@type\":\"WebPage\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/\",\"url\":\"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/\",\"name\":\"Composants HEMT au nitrure de Gallium ICeGaN 650 V -\",\"isPartOf\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#website\"},\"datePublished\":\"2023-06-10T08:28:26+00:00\",\"dateModified\":\"2023-06-10T08:28:26+00:00\",\"description\":\"Cambridge GaN Devices (CGD) a lanc\u00e9 la deuxi\u00e8me s\u00e9rie de sa famille de composants HEMT au nitrure de Gallium ICeGaN 650 V.\",\"breadcrumb\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/#breadcrumb\"},\"inLanguage\":\"fr-FR\",\"potentialAction\":[{\"@type\":\"ReadAction\",\"target\":[\"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/\"]}]},{\"@type\":\"BreadcrumbList\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/#breadcrumb\",\"itemListElement\":[{\"@type\":\"ListItem\",\"position\":1,\"name\":\"Home\",\"item\":\"https:\/\/test.eenewseurope.com\/fr\/\"},{\"@type\":\"ListItem\",\"position\":2,\"name\":\"Composants HEMT au nitrure de Gallium ICeGaN 650 V\"}]},{\"@type\":\"WebSite\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#website\",\"url\":\"https:\/\/www.eenewseurope.com\/fr\/\",\"name\":\"EENewsEurope\",\"description\":\"Just another WordPress site\",\"publisher\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\"},\"potentialAction\":[{\"@type\":\"SearchAction\",\"target\":{\"@type\":\"EntryPoint\",\"urlTemplate\":\"https:\/\/www.eenewseurope.com\/fr\/?s={search_term_string}\"},\"query-input\":\"required name=search_term_string\"}],\"inLanguage\":\"fr-FR\"},{\"@type\":\"Organization\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#organization\",\"name\":\"EENewsEurope\",\"url\":\"https:\/\/www.eenewseurope.com\/fr\/\",\"logo\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/\",\"url\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"contentUrl\":\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg\",\"width\":283,\"height\":113,\"caption\":\"EENewsEurope\"},\"image\":{\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/\"}},{\"@type\":\"Person\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/e4387676ad67ce722325c7832f3c3762\",\"name\":\"Alain Dieul\",\"image\":{\"@type\":\"ImageObject\",\"inLanguage\":\"fr-FR\",\"@id\":\"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/image\/736120675699dbbf0f0f282b9a9cfb75\",\"url\":\"https:\/\/secure.gravatar.com\/avatar\/bc93b056d07515be5b8eecd4acf49c5c?s=96&d=mm&r=g\",\"contentUrl\":\"https:\/\/secure.gravatar.com\/avatar\/bc93b056d07515be5b8eecd4acf49c5c?s=96&d=mm&r=g\",\"caption\":\"Alain Dieul\"},\"sameAs\":[\"http:\/\/ECINews\"]}]}<\/script>","yoast_head_json":{"title":"Composants HEMT au nitrure de Gallium ICeGaN 650 V ...","description":"Cambridge GaN Devices (CGD) a lanc\u00e9 la deuxi\u00e8me s\u00e9rie de sa famille de composants HEMT au nitrure de Gallium ICeGaN 650 V.","robots":{"index":"index","follow":"follow","max-snippet":"max-snippet:-1","max-image-preview":"max-image-preview:large","max-video-preview":"max-video-preview:-1"},"canonical":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/424080\/","og_locale":"fr_FR","og_type":"article","og_title":"Composants HEMT au nitrure de Gallium ICeGaN 650 V","og_description":"Cambridge GaN Devices (CGD) a lanc\u00e9 la deuxi\u00e8me s\u00e9rie de sa famille de composants HEMT au nitrure de Gallium ICeGaN 650 V.","og_url":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/424080\/","og_site_name":"EENewsEurope","article_published_time":"2023-06-10T08:28:26+00:00","og_image":[{"width":1080,"height":873,"url":"https:\/\/www.eenewseurope.com\/wp-content\/uploads\/2023\/06\/ECI1856_Cambridge-scaled.jpg","type":"image\/jpeg"}],"author":"Alain Dieul","twitter_card":"summary_large_image","twitter_misc":{"Written by":"Alain Dieul","Est. reading time":"2 minutes"},"schema":{"@context":"https:\/\/schema.org","@graph":[{"@type":"Article","@id":"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/#article","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/"},"author":{"name":"Alain Dieul","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/e4387676ad67ce722325c7832f3c3762"},"headline":"Composants HEMT au nitrure de Gallium ICeGaN 650 V","datePublished":"2023-06-10T08:28:26+00:00","dateModified":"2023-06-10T08:28:26+00:00","mainEntityOfPage":{"@id":"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/"},"wordCount":476,"publisher":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#organization"},"keywords":["Composants de puissance"],"articleSection":["Nouveaux produits"],"inLanguage":"fr-FR"},{"@type":"WebPage","@id":"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/","url":"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/","name":"Composants HEMT au nitrure de Gallium ICeGaN 650 V -","isPartOf":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#website"},"datePublished":"2023-06-10T08:28:26+00:00","dateModified":"2023-06-10T08:28:26+00:00","description":"Cambridge GaN Devices (CGD) a lanc\u00e9 la deuxi\u00e8me s\u00e9rie de sa famille de composants HEMT au nitrure de Gallium ICeGaN 650 V.","breadcrumb":{"@id":"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/#breadcrumb"},"inLanguage":"fr-FR","potentialAction":[{"@type":"ReadAction","target":["https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/"]}]},{"@type":"BreadcrumbList","@id":"https:\/\/www.eenewseurope.com\/fr\/composants-hemt-au-nitrure-de-gallium-icegan-650-v\/#breadcrumb","itemListElement":[{"@type":"ListItem","position":1,"name":"Home","item":"https:\/\/test.eenewseurope.com\/fr\/"},{"@type":"ListItem","position":2,"name":"Composants HEMT au nitrure de Gallium ICeGaN 650 V"}]},{"@type":"WebSite","@id":"https:\/\/www.eenewseurope.com\/fr\/#website","url":"https:\/\/www.eenewseurope.com\/fr\/","name":"EENewsEurope","description":"Just another WordPress site","publisher":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#organization"},"potentialAction":[{"@type":"SearchAction","target":{"@type":"EntryPoint","urlTemplate":"https:\/\/www.eenewseurope.com\/fr\/?s={search_term_string}"},"query-input":"required name=search_term_string"}],"inLanguage":"fr-FR"},{"@type":"Organization","@id":"https:\/\/www.eenewseurope.com\/fr\/#organization","name":"EENewsEurope","url":"https:\/\/www.eenewseurope.com\/fr\/","logo":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/","url":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","contentUrl":"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/02\/logo-1.jpg","width":283,"height":113,"caption":"EENewsEurope"},"image":{"@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/logo\/image\/"}},{"@type":"Person","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/e4387676ad67ce722325c7832f3c3762","name":"Alain Dieul","image":{"@type":"ImageObject","inLanguage":"fr-FR","@id":"https:\/\/www.eenewseurope.com\/fr\/#\/schema\/person\/image\/736120675699dbbf0f0f282b9a9cfb75","url":"https:\/\/secure.gravatar.com\/avatar\/bc93b056d07515be5b8eecd4acf49c5c?s=96&d=mm&r=g","contentUrl":"https:\/\/secure.gravatar.com\/avatar\/bc93b056d07515be5b8eecd4acf49c5c?s=96&d=mm&r=g","caption":"Alain Dieul"},"sameAs":["http:\/\/ECINews"]}]}},"authors":[{"term_id":1154,"user_id":36,"is_guest":0,"slug":"alain-dieul","display_name":"Alain Dieul","avatar_url":"https:\/\/secure.gravatar.com\/avatar\/bc93b056d07515be5b8eecd4acf49c5c?s=96&d=mm&r=g","0":null,"1":"","2":"","3":"","4":"","5":"","6":"","7":"","8":""}],"_links":{"self":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/424080"}],"collection":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/users\/36"}],"replies":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/comments?post=424080"}],"version-history":[{"count":0,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/424080\/revisions"}],"wp:featuredmedia":[{"embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media\/424081"}],"wp:attachment":[{"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/media?parent=424080"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/categories?post=424080"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/tags?post=424080"},{"taxonomy":"domains","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/domains?post=424080"},{"taxonomy":"author","embeddable":true,"href":"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/ppma_author?post=424080"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}