{"id":418602,"date":"2023-04-07T18:56:06","date_gmt":"2023-04-07T16:56:06","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=418602"},"modified":"2023-04-07T18:56:06","modified_gmt":"2023-04-07T16:56:06","slug":"virginia-tech-confirme-la-technologie-icegan-de-cgd","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/virginia-tech-confirme-la-technologie-icegan-de-cgd\/","title":{"rendered":"Virginia Tech confirme la technologie ICeGaN de CGD"},"content":{"rendered":"<h2>Selon Virginia Tech University, la technologie de nitrure de gallium (GaN) ICeGaN de CGD serait plus fiable et plus robuste que celle des autres plateformes GaN<\/h2>\n<p><a href=\"https:\/\/camgandevices.com\/\"><br \/>\nCambridge GaN Devices (CGD)<\/a>, la soci\u00e9t\u00e9 de semi-conducteurs clean-tech fabless qui d\u00e9veloppe une gamme de composants d&rsquo;alimentation \u00e0 base de GaN \u00e9conomes en \u00e9nergie pour une \u00e9lectronique plus verte, a annonc\u00e9 que des \u00e9tudes ind\u00e9pendantes men\u00e9es par des universitaires de premier plan de la Virginia Tech University, d\u00e9montrent que la technologie de nitrure de gallium (GaN) ICeGaN de CGD est plus fiable et plus robuste que les autres plateformes GaN.<\/p>\n<h3>Une marge de surtension exceptionnellement \u00e9lev\u00e9e de plus de 70 V<\/h3>\n<p>L&rsquo;article, intitul\u00e9 \u00ab\u00a0A GaN HEMT with Exceptional Gate Over-Voltage Robustness\u00a0\u00bb, pr\u00e9sent\u00e9 par des chercheurs de la Virginia Tech et Daniel Popa, directeur de l&rsquo;innovation et de la recherche de CGD, fournit des preuves exp\u00e9rimentales qui montrent que les HEMT ICeGaN, avec des circuits de protection intelligents, montrent une marge de surtension exceptionnellement \u00e9lev\u00e9e de plus de 70 V, ce qui est comparable aux composants au silicium traditionnels de pointe, et peut-\u00eatre m\u00eame plus \u00e9lev\u00e9.<\/p>\n<p>\u00ab Une tension de commande accidentelle \u00e9lev\u00e9e est un probl\u00e8me critique pour la fiabilit\u00e9 de la grille et de la conception du driver des composants GaN HEMT. Les HEMTs GaN \u00e0 la pointe de la technologie survivent \u00e0 environ 25 V maximum, ce qui peut se produire dans des applications telles que les convertisseurs et entra\u00eener la d\u00e9faillance du composant. Jusqu&rsquo;\u00e0 l\u2019invention de ICeGaN, des valeurs de tension de claquage plus \u00e9lev\u00e9es, de 70 V et plus, n&rsquo;\u00e9taient possibles qu&rsquo;avec des composants SiC et de super-jonction \u00e0 la pointe de la technologie.\u00a0\u00bb d\u00e9clare Daniel Popa Directeur innovation &amp; Recherche CGD.<\/p>\n<h3>Un seuil de tension plus \u00e9lev\u00e9 de 3 V<\/h3>\n<p>Les ICeGaN HEMTs poss\u00e8dent un ensemble unique de capacit\u00e9s intrins\u00e8ques qui, ensemble, portent la fiabilit\u00e9 des composants bien au-dessus de celle des composants GaN de pointe actuels des concurrents, tout en se rapprochant de la robustesse des composants de pointe \u00e0 base de Si. En plus de la capacit\u00e9 de claquage de grille dynamique extr\u00eamement \u00e9lev\u00e9e, rendue possible par l&rsquo;inclusion d&rsquo;un circuit intelligent GaN enti\u00e8rement int\u00e9gr\u00e9 et confirm\u00e9e par l\u2019\u00e9tude de la Virginia Tech, la technologie ICeGaN a un seuil de tension plus \u00e9lev\u00e9 de 3 V, une plage de tension plus \u00e9lev\u00e9e (0 &#8211; 20 V), et une action de blocage de la tension de grille plus forte \u00e0 des temp\u00e9ratures plus basses.<\/p>\n<p>De plus, une nouvelle conception de Miller-clamp, \u00e9galement int\u00e9gr\u00e9e dans le circuit intelligent ICeGaN, assure l&rsquo;immunit\u00e9 contre des \u00e9v\u00e9nements dV\/dt et dI\/dt \u00e9lev\u00e9s et \u00e9vite le besoin de tensions de grille n\u00e9gatives pour \u00e9teindre (et maintenir \u00e9teint) le HEMT, ce qui \u00e0 son tour r\u00e9duit l&rsquo;exposition au stress dynamique R<sub>on <\/sub>du composant.<\/p>\n<p><a title=\"www.camgandevices.com\" href=\"http:\/\/www.camgandevices.com\">www.camgandevices.com<\/a><\/p>\n<p><a href=\"https:\/\/news.google.com\/publications\/CAAqBwgKMJbcwQswuPfYAw?hl=fr&amp;gl=BE&amp;ceid=BE:fr\">Suivre ECInews sur Google news<\/a><\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Selon Virginia Tech University, la technologie de nitrure de gallium (GaN) ICeGaN de CGD serait plus fiable et plus robuste que celle des autres plateformes GaN Cambridge GaN Devices (CGD), la soci\u00e9t\u00e9 de semi-conducteurs clean-tech fabless qui d\u00e9veloppe une gamme de composants d&rsquo;alimentation \u00e0 base de GaN \u00e9conomes en \u00e9nergie pour une \u00e9lectronique plus verte, [&hellip;]<\/p>\n","protected":false},"author":36,"featured_media":418603,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[886],"tags":[],"domains":[47],"ppma_author":[1154],"class_list":["post-418602","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Virginia Tech confirme la technologie ICeGaN de CGD ...<\/title>\n<meta name=\"description\" content=\"la technologie de nitrure de gallium (GaN) ICeGaN de CGD est plus fiable et plus robuste que les autres plateformes GaN\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/418602\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" 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