{"id":417014,"date":"2023-03-21T20:40:55","date_gmt":"2023-03-21T19:40:55","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?p=417014"},"modified":"2023-03-21T20:45:01","modified_gmt":"2023-03-21T19:45:01","slug":"rohm-presente-une-technologie-de-circuit-integre-de-controle-a-ultra-haute-vitesse-pour-dispositifs-gan","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/rohm-presente-une-technologie-de-circuit-integre-de-controle-a-ultra-haute-vitesse-pour-dispositifs-gan\/","title":{"rendered":"Rohm pr\u00e9sente une technologie de circuit int\u00e9gr\u00e9 de contr\u00f4le \u00e0 ultra-haute vitesse pour dispositifs GaN"},"content":{"rendered":"

Des \u00e9conomies d’\u00e9nergie et une miniaturisation accrues dans les applications d’alimentation en combinant des dispositifs GaN et des circuits int\u00e9gr\u00e9s de contr\u00f4le \u00e0 ultra haute vitesse<\/span><\/h3>\n

La technologie des circuits de contr\u00f4le ultra-rapide de ROHM maximise les performances du GaN et d’autres dispositifs de commutation \u00e0 grande vitesse. En effet, l’adoption des circuits GaN s’est rapidement \u00e9tendue en raison de leurs caract\u00e9ristiques de commutation \u00e9lev\u00e9e sup\u00e9rieures aux autres dispositifs et de ce fait, \u00a0les circuits int\u00e9gr\u00e9s de contr\u00f4le, charg\u00e9s de les piloter ont d\u00fb suivre les performances, ce qui \u00a0est devenue un r\u00e9el \u00a0d\u00e9fi.<\/p>\n

Technologie des Circuits Int\u00e9gr\u00e9s\u00a0 de contr\u00f4le.<\/strong><\/p>\n

ROHM a donc \u00a0fait \u00e9voluer sa technologie de contr\u00f4le d’impulsion ultra-rapide Nano Pulse Control\u2122. D\u00e9di\u00e9e aux circuits int\u00e9gr\u00e9s d’alimentation, faisant passer la largeur d’impulsion de contr\u00f4le des 9ns conventionnels \u00e0 2ns,\u00a0 en utilisant une configuration de circuit unique, qui permet de passer des tensions haute jusqu’\u00e0 60 V \u00e0 basses jusqu’\u00e0 0,6 V avec un seul circuit int\u00e9gr\u00e9 d’alimentation.<\/p>\n

La prise en charge de composants p\u00e9riph\u00e9riques plus petits pour la commutation haute fr\u00e9quence des dispositifs GaN r\u00e9duit la zone de montage d’environ 86 % par rapport aux solutions conventionnelles lorsqu’elles sont associ\u00e9es \u00e0 un circuit d’alimentation EcoGaN\u2122.\u00a0Cette technologie utilis\u00e9e pour les dispositifs GaN, maximise les performances et tire le meilleur parti de la commutation \u00e0 haute vitesse.<\/p>\n

ROHM commercialiser ces \u00a0circuits int\u00e9gr\u00e9s de contr\u00f4le utilisant la technologie Nano Pulse Control\u2122, avec dans un premier temps\u00a0 la fourniture \u00a0d’\u00e9chantillons des circuits int\u00e9gr\u00e9s de contr\u00f4le CC-CC 100V 1ch au cours du second semestre 2023. Leur utilisation conjointe avec des dispositifs ROHM GaN (s\u00e9rie EcoGaN \u2122) se traduira par d’importantes \u00e9conomies d’\u00e9nergie et de miniaturisation dans un grand nombre d’applications, y compris les alimentations de base, les centres de donn\u00e9es, les \u00e9quipements d\u2019automatisation dans l\u2019industrie et les drones.<\/p>\n

Professeur Yusuke Mori, \u00c9cole sup\u00e9rieure d’ing\u00e9nierie, Universit\u00e9 d’Osaka :\u00a0<\/strong>\u00ab Le GaN est tr\u00e8s pr\u00e9sent depuis de nombreuses ann\u00e9es en tant que mat\u00e9riau semiconducteur de puissance permettant de r\u00e9aliser des \u00e9conomies d’\u00e9nergie, mais des obstacles existent comme la qualit\u00e9 et le co\u00fbt.\u00a0Nous avons mis en place une production de masse pour les dispositifs GaN qui am\u00e9liore la fiabilit\u00e9 tout en d\u00e9veloppant des circuits int\u00e9gr\u00e9s de contr\u00f4le qui maximisent leurs performances.\u00a0C\u2019est un grand pas vers l’adoption g\u00e9n\u00e9ralis\u00e9e des dispositifs GaN.\u00a0\u00bb<\/p>\n

Nano Pulse Control<\/strong><\/p>\n

La technologie de contr\u00f4le d’impulsion ultra-rapide de ROHM qui permet d’obtenir un temps de commutation ON (largeur de contr\u00f4le du circuit int\u00e9gr\u00e9 d’alimentation) de l’ordre des nanosecondes (ns), permettant de convertir des hautes en basses tensions \u00e0 l’aide d’un seul circuit int\u00e9gr\u00e9 – contrairement aux classiques solutions n\u00e9cessitant deux circuits int\u00e9gr\u00e9s d’alimentation.<\/p>\n

Nano Pulse Control<\/a>\u00a0 –\u00a0\u00a0Rohm<\/a><\/p>\n

Suivre ECInews sur Google news<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

Des \u00e9conomies d’\u00e9nergie et une miniaturisation accrues dans les applications d’alimentation en combinant des dispositifs GaN et des circuits int\u00e9gr\u00e9s de contr\u00f4le \u00e0 ultra haute vitesse La technologie des circuits de contr\u00f4le ultra-rapide de ROHM maximise les performances du GaN et d’autres dispositifs de commutation \u00e0 grande vitesse. En effet, l’adoption des circuits GaN s’est […]<\/p>\n","protected":false},"author":11,"featured_media":417018,"comment_status":"closed","ping_status":"closed","sticky":true,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[3098,3097,1639],"domains":[47],"ppma_author":[1143],"class_list":["post-417014","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-commutation-a-haute-vitesse","tag-dispositifs-gan","tag-electronique-de-puissance","domains-electronique-eci"],"acf":[],"yoast_head":"Rohm pr\u00e9sente une technologie de circuit int\u00e9gr\u00e9 de contr\u00f4l...<\/title>\n<meta name=\"description\" content=\"Economies d'\u00e9nergie et miniaturisation dans les alimentation en combinant les dispositifs GaN et des circuits int\u00e9gr\u00e9s de contr\u00f4le \u00e0 ultra haute vitesse\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, 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