{"id":409876,"date":"2023-01-05T10:08:10","date_gmt":"2023-01-05T09:08:10","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?p=409876"},"modified":"2023-01-05T10:09:22","modified_gmt":"2023-01-05T09:09:22","slug":"onsemi-presente-de-nouveaux-mosfet-de-puissance-au-ces-las-vegas","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/onsemi-presente-de-nouveaux-mosfet-de-puissance-au-ces-las-vegas\/","title":{"rendered":"Onsemi pr\u00e9sente de nouveaux Mosfet de puissance au CES Las Vegas"},"content":{"rendered":"<p><strong>Au Consumer Electronics Show\u00a0de Las Vegas, Onsemi pr\u00e9sente trois nouveaux Mosfet EliteSiC 1700 V et deux diodes Schottky EliteSiC 1700 V \u00e0 avalanche. Ces nouveaux circuits offrent fiabilit\u00e9, hautes performances et\u00a0 haut rendement pour les applications li\u00e9es \u00e0 l &lsquo;\u00e9nergie et aux entra\u00eenements industriels.<\/strong><\/p>\n<p>Le Mosfet EliteSiC 1700 V, offre une tension de claquage (BV) plus \u00e9lev\u00e9e, n\u00e9cessaire pour les applications industrielles de haute puissance, et les deux diodes Schottky EliteSiC de 1700 V \u00e0 avalanche permettent un fonctionnement stable \u00e0 haute tension et temp\u00e9ratures \u00e9lev\u00e9es tout en offrant un rendement accru gr\u00e2ce au SiC.<\/p>\n<p>Dans les \u00e9nergies renouvelables, les syst\u00e8mes vont vers vers des tensions toujours plus \u00e9lev\u00e9es comme dans le solaire de 1100 V \u00e0 1500 V CC.\u00a0 Les industriels\u00a0 ont\u00a0 donc\u00a0 besoin de MOSFETs avec un BV plus \u00e9lev\u00e9. Le nouveau EliteSiC 1700 V offre une plage de Vgs maximale de -15 V\/25 V, ce qui le rend adapt\u00e9 aux applications de commutation rapide o\u00f9 les tensions de grille augmentent jusqu&rsquo;\u00e0 -10V, offrant une fiabilit\u00e9 accrue du syst\u00e8me.<\/p>\n<p>Dans des conditions de test de 1200 V \u00e0 40 Amp\u00e8res, l&rsquo;EliteSiC 1700 V atteint une charge de grille (Qg) de 200 nC &#8211; soit le meilleur r\u00e9sultat compar\u00e9 aux dispositifs sur le march\u00e9 \u00e9quivalents qui sont plus proches de 300 nC. Un faible Qg permet d&rsquo;obtenir un rendement \u00e9lev\u00e9 dans les applications d&rsquo;\u00e9nergie renouvelable \u00e0 commutation rapide et \u00e0 forte puissance.<\/p>\n<p>Avec une valeur nominale BV de 1700 V, les diodes Schottky EliteSiC offrent une meilleure marge entre la tension inverse maximale (VRRM) et la tension inverse r\u00e9p\u00e9titive de pointe de la diode. Les nouveaux produits offrent \u00e9galement d&rsquo;excellentes performances en mati\u00e8re de fuites inverses, avec un courant inverse maximal (IR) de seulement 40 \u00b5A \u00e0 25\u00b0C et 100 \u00b5A \u00e0 175\u00b0C, ce qui est nettement sup\u00e9rieur aux dispositifs concurrents qui sont souvent \u00e9valu\u00e9s \u00e0 100 \u00b5A \u00e0 25\u00b0C.<\/p>\n<p><a href=\"https:\/\/www.onsemi.com\/\">Onsemi<\/a><\/p>\n<p><a href=\"https:\/\/www.onsemi.com\/products\/discrete-power-modules\/silicon-carbide-sic\/silicon-carbide-sic-mosfets\/nth4l028n170m1\">Mosfet EliteSiC 1700 V (NTH4L028N170M1)<\/a><\/p>\n<p><a href=\"https:\/\/www.onsemi.com\/products\/discrete-power-modules\/silicon-carbide-sic\/silicon-carbide-sic-diodes\/ndsh25170a\">Diodes EliteSiC 1700 V \u00e0 avalanche (NDSH25170A , NDSH10170A)<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Au Consumer Electronics Show\u00a0de Las Vegas, Onsemi pr\u00e9sente trois nouveaux Mosfet EliteSiC 1700 V et deux diodes Schottky EliteSiC 1700 V \u00e0 avalanche. Ces nouveaux circuits offrent fiabilit\u00e9, hautes performances et\u00a0 haut rendement pour les applications li\u00e9es \u00e0 l &lsquo;\u00e9nergie et aux entra\u00eenements industriels. Le Mosfet EliteSiC 1700 V, offre une tension de claquage (BV) [&hellip;]<\/p>\n","protected":false},"author":11,"featured_media":409883,"comment_status":"closed","ping_status":"closed","sticky":true,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[2529,1164,2530],"domains":[47],"ppma_author":[1143],"class_list":["post-409876","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-ces-las-vegas","tag-composants-de-puissance","tag-energies-renouvelables","domains-electronique-eci"],"acf":[],"yoast_head":"<title>Onsemi pr\u00e9sente de nouveaux Mosfet de puissance au CES Las Vegas ...<\/title>\n<meta name=\"description\" content=\"Au Consumer Electronics Show\u00a0de Las Vegas, Onsemi pr\u00e9sente trois nouveaux Mosfet EliteSiC 1700 V et deux diodes Schottky EliteSiC 1700 V \u00e0 avalanche. 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