{"id":409295,"date":"2022-12-27T10:06:44","date_gmt":"2022-12-27T09:06:44","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=409295"},"modified":"2022-12-27T10:06:44","modified_gmt":"2022-12-27T09:06:44","slug":"mosfet-une-structure-disolation-originale-pour-un-meilleur-rendement","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfet-une-structure-disolation-originale-pour-un-meilleur-rendement\/","title":{"rendered":"MOSFET : une structure d\u2019isolation originale pour un meilleur rendement"},"content":{"rendered":"<p>ROHM a r\u00e9cemment d\u00e9velopp\u00e9 un MOSFET 20V Nch compact, le\u00a0<a href=\"https:\/\/www.rohm.com\/products\/mosfets\/small-signal\/single-nch\/ra1c030ld-product#productDetail\">RA1C030LD<\/a>, optimis\u00e9 pour la commutation dans des appareils petits et fins, notamment les smartphones et les appareils connect\u00e9s personnels tels que les oreillettes sans fil et autres \u00e9quipements d\u2019audition.<br \/>\nCes derni\u00e8res ann\u00e9es, la sophistication croissante et les besoins en puissance des appareils compacts ont n\u00e9cessit\u00e9 des batteries plus grandes qui r\u00e9duisent l\u2019espace disponible pour le montage des composants. Dans le m\u00eame temps, une limite s\u2019impose \u00e0 la taille de la batterie : pour utiliser plus efficacement sa puissance, il faut minimiser la perte de puissance des composants mont\u00e9s.<br \/>\nPour r\u00e9pondre \u00e0 ce besoin, le d\u00e9veloppement de MOSFET dans des bo\u00eetiers \u00e0 technologie d\u2019encapsulation sur tranches contribuant \u00e0 une miniaturisation plus pouss\u00e9e, tout en maintenant les caract\u00e9ristiques n\u00e9cessaires, est en train de se g\u00e9n\u00e9raliser dans l\u2019industrie. ROHM tire parti de ses atouts en tant que fabricant de circuits int\u00e9gr\u00e9s pour r\u00e9duire de mani\u00e8re significative la r\u00e9sistance du c\u00e2blage (qui a augment\u00e9 avec les processus discrets conventionnels). Il en r\u00e9sulte un MOSFET de puissance compact associ\u00e9 \u00e0 une faible perte de puissance.<\/p>\n<p>Le\u00a0<a href=\"https:\/\/www.rohm.com\/products\/mosfets\/small-signal\/single-nch\/ra1c030ld-product#productDetail\">RA1C030LD<\/a>\u00a0est propos\u00e9 dans le bo\u00eetier \u00e0 taille de puce (1,0 mm \u00d7 0,6 mm) de niveau d\u2019encapsulation sur tranche DSN1006-3, qui tire parti du processus de circuit int\u00e9gr\u00e9 propri\u00e9taire de ROHM pour parvenir \u00e0 une basse dissipation de puissance ainsi qu\u2019\u00e0 une miniaturisation plus pouss\u00e9e. En ce qui concerne le facteur de m\u00e9rite qui exprime la relation entre les pertes par conduction et par commutation (r\u00e9sistance \u00e0 l\u2019\u00e9tat passant \u00d7 Qgd), la valeur de pointe atteinte est inf\u00e9rieure de 20 % \u00e0 celle des produits standard dans le m\u00eame bo\u00eetier (1,0 mm \u00d7 0,6 mm ou plus petit), contribuant \u00e0 une surface de carte nettement plus petite ainsi qu\u2019\u00e0 une efficacit\u00e9 accrue dans de nombreux appareils compacts. En m\u00eame temps, la structure de bo\u00eetier unique de ROHM offre une protection isol\u00e9e pour les parois lat\u00e9rales (contrairement aux produits standard dans le m\u00eame bo\u00eetier sans protection). Cela r\u00e9duit le risque de courts-circuits dus au contact entre les composants dans les appareils compacts qui doivent recourir \u00e0 un montage \u00e0 haute densit\u00e9 en raison des contraintes d\u2019espace, contribuant \u00e0 un fonctionnement plus s\u00fbr.<\/p>\n<p><a title=\"www.rohm.com\" href=\"http:\/\/www.rohm.com\">www.rohm.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>ROHM a r\u00e9cemment d\u00e9velopp\u00e9 un MOSFET 20V Nch compact, le\u00a0RA1C030LD, optimis\u00e9 pour la commutation dans des appareils petits et fins, notamment les smartphones et les appareils connect\u00e9s personnels tels que les oreillettes sans fil et autres \u00e9quipements d\u2019audition. Ces derni\u00e8res ann\u00e9es, la sophistication croissante et les besoins en puissance des appareils compacts ont n\u00e9cessit\u00e9 des [&hellip;]<\/p>\n","protected":false},"author":36,"featured_media":409296,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[1164],"domains":[47],"ppma_author":[1154],"class_list":["post-409295","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-composants-de-puissance","domains-electronique-eci"],"acf":[],"yoast_head":"<title>MOSFET : une structure d\u2019isolation originale pour un meilleur...<\/title>\n<meta name=\"description\" content=\"ROHM a r\u00e9cemment d\u00e9velopp\u00e9 un MOSFET 20V Nch compact, le\u00a0RA1C030LD, optimis\u00e9 pour la commutation dans des appareils petits et fins, notamment les...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/409295\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFET : une structure d\u2019isolation originale pour un meilleur rendement\" \/>\n<meta property=\"og:description\" content=\"ROHM a r\u00e9cemment d\u00e9velopp\u00e9 un MOSFET 20V Nch compact, le\u00a0RA1C030LD, optimis\u00e9 pour la commutation dans des appareils petits et fins, notamment les smartphones et les appareils connect\u00e9s personnels tels que les oreillettes sans fil et autres \u00e9quipements d\u2019audition. Ces derni\u00e8res ann\u00e9es, la sophistication croissante et les besoins en puissance des appareils compacts ont n\u00e9cessit\u00e9 des [&hellip;]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/409295\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2022-12-27T09:06:44+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/12\/ECI1604_Rohm-scaled.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"1080\" \/>\n\t<meta property=\"og:image:height\" content=\"780\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Alain Dieul\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" content=\"Alain Dieul\" \/>\n\t<meta name=\"twitter:label2\" content=\"Est. 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