{"id":394253,"date":"2022-09-04T18:39:05","date_gmt":"2022-09-04T16:39:05","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=394253"},"modified":"2022-09-04T18:39:05","modified_gmt":"2022-09-04T16:39:05","slug":"igbt-si-de-nouvelle-generation-pour-onduleurs-de-vehicules-electriques","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/igbt-si-de-nouvelle-generation-pour-onduleurs-de-vehicules-electriques\/","title":{"rendered":"IGBT Si de nouvelle g\u00e9n\u00e9ration pour onduleurs de v\u00e9hicules \u00e9lectriques"},"content":{"rendered":"<p><a href=\"http:\/\/www.renesas.com\/\">Renesas Electronics Corporation<\/a>\u00a0a annonc\u00e9 le d\u00e9veloppement d&rsquo;une nouvelle g\u00e9n\u00e9ration de Si-IGBT (Silicon Insulated Gate Bipolar Transistors) qui seront propos\u00e9s dans un faible encombrement tout en offrant de faibles pertes de puissance. Destin\u00e9s aux onduleurs de v\u00e9hicules \u00e9lectriques (EV) de nouvelle g\u00e9n\u00e9ration, les IGBT de g\u00e9n\u00e9ration AE5 seront produits en s\u00e9rie \u00e0 partir du premier semestre 2023 sur les lignes de tranches de 200 et 300mm de Renesas dans l&rsquo;usine de la soci\u00e9t\u00e9 \u00e0 Naka, au Japon. De plus, Renesas acc\u00e9l\u00e9rera la production \u00e0 partir du premier semestre 2024 dans sa nouvelle\u00a0<a href=\"https:\/\/www.renesas.com\/about\/press-room\/renesas-invest-and-restart-operation-kofu-factory-300mm-wafer-fab-dedicated-power-semiconductors\">usine de fabrication de tranches de 300mm de semi-conducteurs de puissance \u00e0 Kofu<\/a>, au Japon, pour r\u00e9pondre \u00e0 la demande croissante de produits de semi-conducteurs de puissance.<\/p>\n<p>Le proc\u00e9d\u00e9 AE5 \u00e0 base de silicium pour les IGBT permet de r\u00e9duire de 10% les pertes de puissance par rapport aux produits AE4 de la g\u00e9n\u00e9ration actuelle, une \u00e9conomie d&rsquo;\u00e9nergie qui aidera les d\u00e9veloppeurs de v\u00e9hicules \u00e9lectriques \u00e0 \u00e9conomiser la batterie et \u00e0 augmenter l&rsquo;autonomie. De plus, les nouveaux produits sont environ 10% plus petits tout en conservant une grande robustesse. Les nouveaux composants Renesas atteignent le plus haut niveau de performance de l&rsquo;industrie pour les IGBT en \u00e9quilibrant de mani\u00e8re optimale les compromis entre faible perte de puissance et robustesse. De plus, les nouveaux IGBT am\u00e9liorent consid\u00e9rablement les performances et la s\u00e9curit\u00e9 en tant que modules en minimisant les variations de param\u00e8tres entre les IGBT et en offrant une stabilit\u00e9 lors du fonctionnement des IGBT en parall\u00e8le. Ces caract\u00e9ristiques offrent aux ing\u00e9nieurs une plus grande flexibilit\u00e9 pour concevoir des onduleurs plus petits qui atteignent des performances \u00e9lev\u00e9es.<\/p>\n<p>Les IGBT de g\u00e9n\u00e9ration AE5 ciblent les onduleurs 400-800V\u00a0en offrant des tenues en tension de 750V (220A et 300A) et 1200V (150A et 200A). Leurs performances sont stables sur toute la plage de temp\u00e9rature de jonction de fonctionnement (Tj) de -40\u00b0C \u00e0 175\u00b0C.<\/p>\n<p>&nbsp;<\/p>\n<p><a href=\"https:\/\/www.renesas.com\/products\/automotive-products\/automotive-power-devices\/automotive-igbt-0\">www.renesas.com\/products\/automotive-products\/automotive-power-devices\/automotive-igbt-0<\/a>.<\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Renesas Electronics Corporation\u00a0a annonc\u00e9 le d\u00e9veloppement d&rsquo;une nouvelle g\u00e9n\u00e9ration de Si-IGBT (Silicon Insulated Gate Bipolar Transistors) qui seront propos\u00e9s dans un faible encombrement tout en offrant de faibles pertes de puissance. Destin\u00e9s aux onduleurs de v\u00e9hicules \u00e9lectriques (EV) de nouvelle g\u00e9n\u00e9ration, les IGBT de g\u00e9n\u00e9ration AE5 seront produits en s\u00e9rie \u00e0 partir du premier semestre [&hellip;]<\/p>\n","protected":false},"author":36,"featured_media":394254,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[891,1164],"domains":[47],"ppma_author":[1154],"class_list":["post-394253","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-automotive-fr","tag-composants-de-puissance","domains-electronique-eci"],"acf":[],"yoast_head":"<title><\/title>\n<meta name=\"description\" content=\"Renesas Electronics Corporation\u00a0a annonc\u00e9 le d\u00e9veloppement d&rsquo;une nouvelle g\u00e9n\u00e9ration de Si-IGBT (Silicon Insulated Gate Bipolar Transistors) qui...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/394253\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"IGBT Si de nouvelle g\u00e9n\u00e9ration pour onduleurs de v\u00e9hicules \u00e9lectriques\" \/>\n<meta property=\"og:description\" content=\"Renesas Electronics Corporation\u00a0a annonc\u00e9 le d\u00e9veloppement d&rsquo;une nouvelle g\u00e9n\u00e9ration de Si-IGBT (Silicon Insulated Gate Bipolar Transistors) qui seront propos\u00e9s dans un faible encombrement tout en offrant de faibles pertes de puissance. Destin\u00e9s aux onduleurs de v\u00e9hicules \u00e9lectriques (EV) de nouvelle g\u00e9n\u00e9ration, les IGBT de g\u00e9n\u00e9ration AE5 seront produits en s\u00e9rie \u00e0 partir du premier semestre [&hellip;]\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/394253\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2022-09-04T16:39:05+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/2022\/09\/ECI1389_Renesas_auto-scaled.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"1080\" \/>\n\t<meta property=\"og:image:height\" content=\"608\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"Alain Dieul\" \/>\n<meta name=\"twitter:card\" content=\"summary_large_image\" \/>\n<meta name=\"twitter:label1\" content=\"Written by\" \/>\n\t<meta name=\"twitter:data1\" 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