{"id":38639,"date":"2020-12-16T16:12:58","date_gmt":"2020-12-16T16:12:58","guid":{"rendered":"https:\/\/\/imec-presente-des-memoires-dram-sans-condensateur\/"},"modified":"2020-12-16T16:12:58","modified_gmt":"2020-12-16T16:12:58","slug":"imec-presente-des-memoires-dram-sans-condensateur","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/imec-presente-des-memoires-dram-sans-condensateur\/","title":{"rendered":"imec pr\u00e9sente des m\u00e9moires DRAM sans condensateur"},"content":{"rendered":"<p><!-- Global site tag (gtag.js) - Google Analytics --><\/p>\n<p>\u00a0 window.dataLayer = window.dataLayer || [];<\/p>\n<p>\u00a0 function gtag(){dataLayer.push(arguments);}<\/p>\n<p>\u00a0 gtag(&lsquo;js&rsquo;, new Date());\u00a0 gtag(&lsquo;config&rsquo;, &lsquo;UA-160857065-1&rsquo;);<\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"auto\" data-phrase-index=\"0\"><span>Imec a d\u00e9velopp\u00e9 une architecture de cellule de m\u00e9moire DRAM qui \u00e9limine le condensateur et peut donc \u00eatre empil\u00e9e dans une structure 3D.<\/span><\/span><\/span><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"auto\" data-phrase-index=\"0\"><span>Les conceptions DRAM classiques au-del\u00e0 de 32 Go ont du mal \u00e0 \u00e9voluer \u00e0 mesure qu&rsquo;elles deviennent plus petites, en grande partie \u00e0 cause de la pr\u00e9sence de condensateurs. Au lieu de cela, imec a montr\u00e9 une conception avec deux transistors \u00e0 couches minces \u00e0 faible consommation d&rsquo;indium-gallium-oxyde de zinc (IGZO-TFT) et sans condensateur de stockage. Les IGZO-TFT sont bien connus pour leur tr\u00e8s faible courant \u00e0 l&rsquo;arr\u00eat, et la capacit\u00e9 parasite du transistor de lecture sert d&rsquo;\u00e9l\u00e9ment de stockage.<\/span><\/span><\/span><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"auto\" data-phrase-index=\"0\"><span>La cellule 2T0C ( 2 transistors, 0 condensateur) a un temps de r\u00e9tention sup\u00e9rieur \u00e0 400 s, ce qui r\u00e9duit encore la consommation d&rsquo;\u00e9nergie avec un taux de rafra\u00eechissement beaucoup plus long. Cela peut \u00eatre impl\u00e9ment\u00e9 sur le back-end d&rsquo;un processus CMOS (BEOL) pour placer des couches de m\u00e9moire dynamique au-dessus de la logique.<\/span><\/span><\/span><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"auto\" data-phrase-index=\"0\"><span>Imec a construit les transistors avec une g\u00e9om\u00e9trie de 45 nm sur des plaquettes de 300 mm et d\u00e9crit l&rsquo;architecture dans un article lors de la conf\u00e9rence IEDM cette semaine, en d\u00e9cembre 2020.<\/span><\/span><\/span><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"auto\" data-phrase-index=\"0\"><span>\u00abOutre le long temps de r\u00e9tention, les cellules DRAM bas\u00e9es sur IGZO-TFT pr\u00e9sentent un deuxi\u00e8me avantage majeur par rapport aux technologies DRAM actuelles. Contrairement au silicium, les transistors IGZO-TFT peuvent \u00eatre fabriqu\u00e9s \u00e0 des temp\u00e9ratures relativement basses et sont donc compatibles avec le traitement BEOL \u00bb, a d\u00e9clar\u00e9 Gouri Sankar Kar, directeur du programme chez imec.<\/span><\/span><\/span><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"auto\" data-phrase-index=\"0\"><span>\u00abCela nous permet de d\u00e9placer la p\u00e9riph\u00e9rie de la cellule m\u00e9moire DRAM sous la matrice m\u00e9moire, ce qui r\u00e9duit consid\u00e9rablement l&rsquo;encombrement de la puce m\u00e9moire. De plus, le traitement BEOL ouvre des voies vers l&#8217;empilement de cellules DRAM individuelles, permettant ainsi des architectures 3D-DRAM. \u00bb<\/span><\/span><\/span><\/p>\n<p><a href=\"https:\/\/www.electronique-eci.com\/news\/145-milliards-deuros-pour-lindustrie-des-semiconducteurs-en-europe\">145 milliards d&rsquo;euros pour l&rsquo;industrie des semiconducteurs en Europe<\/a><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"auto\" data-phrase-index=\"0\"><span>La mise \u00e0 l&rsquo;\u00e9chelle de la m\u00e9moire DRAM est un \u00e9l\u00e9ment cl\u00e9 pour le cloud computing et l&rsquo;IA, qui sont des domaines que la Commission europ\u00e9enne a identifi\u00e9s comme cl\u00e9s pour la r\u00e9gion, en particulier dans l&rsquo;optique de la reprise de l&rsquo;\u00e9conomie apr\u00e8s le Covid-19. De nombreuses autres architectures ont \u00e9galement \u00e9t\u00e9 propos\u00e9es pour \u00e9liminer le condensateur dans la DRAM.<\/span><\/span><\/span><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"auto\" data-phrase-index=\"0\"><span>\u00abNotre solution r\u00e9volutionnaire aidera \u00e0 abattre ce qui est appel\u00e9 le \u00ab\u00a0mur de la m\u00e9moire\u00a0\u00bb, permettant aux m\u00e9moires DRAM de continuer \u00e0 jouer un r\u00f4le crucial dans des applications exigeantes telles que le cloud computing et l&rsquo;intelligence artificielle\u00bb, a d\u00e9clar\u00e9 Kar.<\/span><\/span><\/span><\/p>\n<p><strong>Lire aussi:<\/strong><\/p>\n<p><a href=\"https:\/\/www.electronique-eci.com\/news\/mise-jour-de-la-feuille-de-route-pour-le-chip-europeen-epi\">Mise \u00e0 jour de la feuille de route pour le chip europ\u00e9en EPI<\/a><\/p>\n<p><a href=\"https:\/\/www.electronique-eci.com\/news\/craig-prunty-vice-president-marketing-et-developpement-de-sipearl\">Craig Prunty, vice-pr\u00e9sident marketing et d\u00e9veloppement de SiPearl <\/a><\/p>\n<p><a href=\"https:\/\/www.electronique-eci.com\/news\/sipearl-signe-un-contrat-de-licence-majeur-avec-arm\">SiPearl signe un contrat de licence majeur avec Arm <\/a><\/p>\n<p><a href=\"https:\/\/www.european-processor-initiative.eu\/\">www.european-processor-initiative.eu\/<\/a><\/p>\n<p><a href=\"http:\/\/www.imec-int.com\">www.imec-int.com<\/a><\/p>\n<p><strong>Related articles<\/strong><\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewsanalog.com\/news\/besang-launches-non-volatile-dram\">BESANG LAUNCHES NON-VOLATILE DRAM<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/news\/2d-transistor-combines-logic-and-memory-ai\">2D TRANSISTOR COMBINES LOGIC AND MEMORY FOR AI<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/news\/pcm-mram-set-dominate-emerging-memory-market\">PCM, MRAM SET TO DOMINATE EMERGING MEMORY MARKET<\/a><\/li>\n<\/ul>\n<p>\u200b<\/p>\n","protected":false},"excerpt":{"rendered":"<p>L&rsquo;architecture DRAM \u00e0 deux transistors sans condensateur et \u00e0 basse consommation d&rsquo; imec peut \u00eatre empil\u00e9e dans des m\u00e9moires 3D dans le cadre d&rsquo;un processus back end of line (BEOL)<\/p>\n","protected":false},"author":12,"featured_media":163622,"comment_status":"open","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[883],"tags":[899,913,905],"domains":[47],"ppma_author":[1144],"class_list":["post-38639","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-technologies","tag-eda-cad-tools-fr","tag-materials-processes-fr","tag-memory-data-storage-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>imec pr\u00e9sente des m\u00e9moires DRAM sans condensateur ...<\/title>\n<meta name=\"description\" content=\"L&#039;architecture DRAM \u00e0 deux transistors sans condensateur et \u00e0 basse consommation d&#039; imec peut \u00eatre empil\u00e9e dans des m\u00e9moires 3D dans le cadre d&#039;un...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link 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