{"id":385214,"date":"2022-05-29T21:28:38","date_gmt":"2022-05-29T19:28:38","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?p=385214"},"modified":"2022-05-31T08:44:34","modified_gmt":"2022-05-31T06:44:34","slug":"imec-trace-la-voie-pour-aller-au-dela-de-1nm","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/imec-trace-la-voie-pour-aller-au-dela-de-1nm\/","title":{"rendered":"imec trace la voie pour aller au-del\u00e0 de 1nm"},"content":{"rendered":"<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"en\" data-phrase-index=\"0\" data-number-of-phrases=\"1\"><span class=\"Q4iAWc\">Le laboratoire de recherche belge imec a trac\u00e9 la voie vers la technologie des process de semiconducteurs et la conception de puces avec des g\u00e9om\u00e9tries inf\u00e9rieures \u00e0 1 nm jusqu&rsquo;\u00e0 la g\u00e9n\u00e9ration A2 \u00e0 deux angstr\u00f6ms. \u00ab\u00a0Nous sommes convaincus que la loi de Moore ne s&rsquo;arr\u00eatera pas, mais il y aura de nombreuses approches qui y contribueront toutes\u00a0\u00bb, a d\u00e9clar\u00e9 Luc van den Hove, PDG d&rsquo;imec lors de la conf\u00e9rence Futures.<\/span><\/span><\/span><\/p>\n<p>&nbsp;<\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/imec-builds-working-forksheet-transistors-for-2nm-1nm\/\">imec builds working forksheet transistors for 2nm, 1n<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/intel-charts-path-to-1nm-video\/\">Intel charts path to 1nm &#8211; video<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewsanalog.com\/en\/imec-presents-n-over-p-complementary-fet-proposal\/\">imec resents &lsquo;n-over-p&rsquo; complementary FET proposal<\/a><\/li>\n<\/ul>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"en\" data-phrase-index=\"0\" data-number-of-phrases=\"1\"><span class=\"Q4iAWc\">Il souligne plusieurs g\u00e9n\u00e9rations d&rsquo;architecture des composants, \u00e9voluant de la technologie FinFET \u00e0 la technologie feuille de fourche ( forksheet) et vers les canaux atomiques, ainsi que de nouveaux mat\u00e9riaux et l&rsquo;introduction de syst\u00e8mes de lithographie \u00e0 NA \u00e9lev\u00e9 par ASML dont le d\u00e9veloppement prend de nombreuses ann\u00e9es. Les prototypes de syst\u00e8mes NA en cours d&rsquo;installation verront leur d\u00e9ploiement commercial en 2024.<\/span><\/span><\/span><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"en\" data-phrase-index=\"0\" data-number-of-phrases=\"1\"><span class=\"Q4iAWc\">\u00ab Nous sommes convaincus que les outils de lithographie seront l\u00e0 pour \u00e9tendre la loi de Moore bien au-del\u00e0 de la g\u00e9n\u00e9ration \u00e9quivalente de 1 nm. Mais nous devrons d\u00e9velopper de nouvelles architectures de composants. Cela permettra le r\u00e9tr\u00e9cissement d&rsquo;une cellule standard \u00bb, a-t-il d\u00e9clar\u00e9. FinFET a \u00e9t\u00e9 le cheval de bataille de 10 nm \u00e0 3 nm. \u00ab\u00a0A partir d&rsquo;une porte de 2 nm, les architectures \u00ab\u00a0gate all around\u00a0\u00bb, constitu\u00e9es d&rsquo;un empilement de nanofeuilles, seront le concept le plus probable.\u00a0\u00bb<\/span><\/span><\/span><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"en\" data-phrase-index=\"0\" data-number-of-phrases=\"1\"><span class=\"Q4iAWc\">Il souligne l&rsquo;architecture forksheet d\u00e9velopp\u00e9e \u00e0 l&rsquo;imec. Cela nous permet de rapprocher le canal n et le canal p avec un mat\u00e9riau barri\u00e8re. Ce sera une option pour \u00e9tendre la la technologie \u00ab\u00a0gate all around\u00a0\u00bb au-del\u00e0 de 1 nm. Ensuite, vous pouvez mettre les canaux n et p l&rsquo;un au-dessus de l&rsquo;autre pour une mise \u00e0 l&rsquo;\u00e9chelle suppl\u00e9mentaire et nous pensons avoir r\u00e9ussi \u00e0 d\u00e9velopper les premi\u00e8res versions de ceux-ci.<\/span><\/span><\/span><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"en\" data-phrase-index=\"0\" data-number-of-phrases=\"1\"><span class=\"Q4iAWc\">Ensuite, il existe de nouveaux mat\u00e9riaux utilisant du tungst\u00e8ne ou du molybd\u00e8ne qui peuvent fournir des longueurs de porte de quelques atomes pour les processus A10 (1 nm) en 2028 et inf\u00e9rieurs avec des structures \u00e0 quatre Angstroms (A4) en 2034 et deux Angtroms (A2) en 2036. \u00ab Nous avons r\u00e9cemment pr\u00e9sent\u00e9 les premi\u00e8res versions de ces dispositifs \u00e0 canaux atomiques. Ceux-ci nous am\u00e8neront aux g\u00e9n\u00e9rations inf\u00e9rieures \u00e0 1 nm \u00bb, a-t-il d\u00e9clar\u00e9.<\/span><\/span><\/span><\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/applied-upgrade-supports-backside-power-and-gaa-transistors\/\">Applied upgrade supports backside power and GAA transistors<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/delivering-power-from-the-back-of-a-chip\/\">Delivering power from the back of a chip<\/a><\/li>\n<\/ul>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"en\" data-phrase-index=\"0\" data-number-of-phrases=\"1\"><span class=\"Q4iAWc\">\u00ab Mais nous devons \u00e9galement am\u00e9liorer les performances de l&rsquo;interconnexion. Une option int\u00e9ressante consiste \u00e0 d\u00e9placer l&rsquo;alimentation \u00e9lectrique \u00e0 l&rsquo;arri\u00e8re de la plaquette. Cela laisse plus de flexibilit\u00e9 de conception pour l&rsquo;interconnexion sur la face avant. \u00ab\u00a0Tout cela se traduit par une mise \u00e0 l&rsquo;\u00e9chelle pour les quinze \u00e0 vingt prochaines ann\u00e9es\u00a0\u00bb, a-t-il d\u00e9clar\u00e9.<\/span><\/span><\/span><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"en\" data-phrase-index=\"0\" data-number-of-phrases=\"1\"><span class=\"Q4iAWc\">Pour r\u00e9aliser les avantages de tout cela, nous avons besoin d&rsquo;un changement de paradigme vers des architectures plus sp\u00e9cifiques \u00e0 un domaine, dit-il. Les futurs dispositifs de syst\u00e8me sur puce seront int\u00e9gr\u00e9s sous la forme d&rsquo;une pile 3D de puces utilisant les technologies de \u00ab\u00a0vias\u00a0\u00bb dans le silicium (TSV) et de \u00ab\u00a0microbumps\u00a0\u00bb, par exemple en empilant une m\u00e9moire SRAM pour le cache L1 juste au-dessus de la logique de base et en utilisant des puces avec diff\u00e9rentes technologies de process pour diff\u00e9rentes t\u00e2ches. Cela conduit \u00e0 plusieurs puces 3D pouvant \u00eatre connect\u00e9es sur un interposeur en silicium. <\/span><\/span><\/span><\/p>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"en\" data-phrase-index=\"0\" data-number-of-phrases=\"1\"><span class=\"Q4iAWc\">\u00ab\u00a0Nous avons d\u00e9velopp\u00e9 toutes ces technologies habilitantes qui sont progressivement reprises par l&rsquo;industrie en ce moment m\u00eame\u00a0\u00bb, a-t-il d\u00e9clar\u00e9. <\/span><\/span><\/span><\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/imec-tackles-data-gap-in-sustainable-semiconductor-technologies\/\">imec tackles data gap in sustainable semiconductor technologies\u00a0<\/a><\/li>\n<\/ul>\n<p><span class=\"VIiyi\" lang=\"fr\"><span class=\"JLqJ4b\" data-language-for-alternatives=\"fr\" data-language-to-translate-into=\"en\" data-phrase-index=\"0\" data-number-of-phrases=\"1\"><span class=\"Q4iAWc\">\u00a0\u00ab Nous devons prendre en compte la durabilit\u00e9 de la fabrication de ces composants, la consommation d&rsquo;\u00e9lectricit\u00e9, l&rsquo;eau, les produits chimiques. Pour optimiser ces process, il ne suffit pas d&rsquo;examiner les performances, la puissance et la surface, mais nous devons prendre en compte les aspects environnementaux de ces technologies \u00bb, <\/span><\/span><\/span><\/p>\n<p>\u201cWe have been developing all these enabling technologies that are gradually being picked up by industry as we speak,\u201d he said.<\/p>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/imec-tackles-data-gap-in-sustainable-semiconductor-technologies\/\">imec tackles data gap in sustainable semiconductor technologies\u00a0<\/a><\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<p><a href=\"http:\/\/www.imec.int.com\">www.imec.int.com<\/a><\/p>\n<h4>Other articles on eeNews Europe<\/h4>\n<ul>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/worlds-largest-commercial-drone-deployment-uses-german-tech\/\">World\u2019s largest commercial drone deployment uses German tech<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/micron-to-ship-232-layer-3d-nand-memory\/\">Micron to ship 232-layer 3D-NAND memory<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/globalfoundries-launches-lab-to-boost-innovation\/\">GlobalFoundries launches innovation lab<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/apple-looks-to-e-ink-displays-for-foldable-phones\/\">Apple looks to e-ink displays for foldable phones<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/old-fabs-never-die-renesas-reopens-fab-for-300mm-silicon-power\/\">Old fabs never die \u2013 Renesas reopens fab for 300mm silicon power<\/a><\/li>\n<li><a href=\"https:\/\/www.eenewseurope.com\/en\/ti-breaks-ground-on-300mm-us-fab\/\">TI breaks ground on 300mm US fab<\/a><\/li>\n<\/ul>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n<p>&nbsp;<\/p>\n","protected":false},"excerpt":{"rendered":"<p>Le laboratoire de recherche belge imec a trac\u00e9 la voie vers la technologie des process de semiconducteurs et la conception de puces avec des g\u00e9om\u00e9tries inf\u00e9rieures \u00e0 1 nm jusqu&rsquo;\u00e0 la g\u00e9n\u00e9ration A2 \u00e0 deux angstr\u00f6ms. \u00ab\u00a0Nous sommes convaincus que la loi de Moore ne s&rsquo;arr\u00eatera pas, mais il y aura de nombreuses approches qui [&hellip;]<\/p>\n","protected":false},"author":34,"featured_media":384905,"comment_status":"closed","ping_status":"closed","sticky":true,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[886,26],"tags":[913,906],"domains":[47],"ppma_author":[1153],"class_list":["post-385214","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-news-fr","category-technology-news","tag-materials-processes-fr","tag-mpus-mcus-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>imec trace la voie pour aller au-del\u00e0 de 1nm ...<\/title>\n<meta name=\"description\" content=\"imec has 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