{"id":378292,"date":"2022-03-23T18:11:21","date_gmt":"2022-03-23T17:11:21","guid":{"rendered":"https:\/\/www.ecinews.fr\/?p=378292"},"modified":"2022-03-23T18:11:21","modified_gmt":"2022-03-23T17:11:21","slug":"rohm-demarre-la-production-de-hemt-gan-150-v-avec-une-tension-de-grille-revolutionnaire-de-8-v","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/rohm-demarre-la-production-de-hemt-gan-150-v-avec-une-tension-de-grille-revolutionnaire-de-8-v\/","title":{"rendered":"ROHM d\u00e9marre la production de HEMT GaN 150 V avec une tension de grille r\u00e9volutionnaire de 8 V"},"content":{"rendered":"<p>Ces derni\u00e8res ann\u00e9es, en raison de la demande croissante de syst\u00e8mes de serveurs pour r\u00e9pondre au nombre croissant d\u2019appareils IoT, l\u2019am\u00e9lioration de l\u2019efficacit\u00e9 de la conversion de puissance et la r\u00e9duction de la taille sont devenues d\u2019importants enjeux soci\u00e9taux qui n\u00e9cessitent de plus amples avanc\u00e9es dans le secteur des appareils d\u2019alimentation. Comme les circuits GaN offrent des caract\u00e9ristiques de commutation plus \u00e9lev\u00e9es et une r\u00e9sistance \u00e0 l\u2019\u00e9tat passant plus faible que les circuits \u00e0 base de silicium, ils devraient contribuer \u00e0 r\u00e9duire la consommation d\u2019\u00e9nergie de diff\u00e9rentes alimentations \u00e9lectriques et une plus grande miniaturisation des composants p\u00e9riph\u00e9riques.<br \/>\nLes HEMT GaN 150 V GaN, s\u00e9rie\u00a0<a href=\"https:\/\/www.rohm.com\/products\/gan-power-devices\">GNE10xxTB<\/a>\u00a0(<a href=\"https:\/\/www.rohm.com\/products\/gan-power-devices\/gan-hemt\/gne1040tb-product\">GNE1040TB<\/a>) de\u00a0ROHM\u00a0utilisent une structure originale qui augmente la tension nominale de la source de grille de 6 V \u00e0 8 V. En cons\u00e9quence, la d\u00e9gradation est \u00e9vit\u00e9e, m\u00eame si des tensions de d\u00e9passement sup\u00e9rieures \u00e0 6 V se produisent pendant la commutation, ce qui contribue \u00e0 am\u00e9liorer la marge de conception et \u00e0 accro\u00eetre la fiabilit\u00e9 des circuits d\u2019alimentation. La s\u00e9rie GNE10xxTB est propos\u00e9e dans un bo\u00eetier tr\u00e8s polyvalent dot\u00e9 d\u2019une dissipation thermique sup\u00e9rieure et d\u2019une grande capacit\u00e9 de courant, facilitant la manipulation pendant le processus de montage.<\/p>\n<p><a href=\"http:\/\/www.rohm.com\/\">www.rohm.com<\/a><\/p>\n<p><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Ces derni\u00e8res ann\u00e9es, en raison de la demande croissante de syst\u00e8mes de serveurs pour r\u00e9pondre au nombre croissant d\u2019appareils IoT, l\u2019am\u00e9lioration de l\u2019efficacit\u00e9 de la conversion de puissance et la r\u00e9duction de la taille sont devenues d\u2019importants enjeux soci\u00e9taux qui n\u00e9cessitent de plus amples avanc\u00e9es dans le secteur des appareils d\u2019alimentation. Comme les circuits GaN [&hellip;]<\/p>\n","protected":false},"author":36,"featured_media":378293,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[1164,890],"domains":[47],"ppma_author":[1154],"class_list":["post-378292","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-composants-de-puissance","tag-powermanagement-fr","domains-electronique-eci"],"acf":[],"yoast_head":"<title>ROHM d\u00e9marre la production de HEMT GaN 150 V avec une tension ...<\/title>\n<meta name=\"description\" content=\"Ces derni\u00e8res ann\u00e9es, en raison de la demande croissante de syst\u00e8mes de serveurs pour r\u00e9pondre au nombre croissant d\u2019appareils IoT, l\u2019am\u00e9lioration...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/378292\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"ROHM d\u00e9marre la production de HEMT GaN 150 V avec une tension de grille r\u00e9volutionnaire de 8 V\" \/>\n<meta property=\"og:description\" content=\"Ces derni\u00e8res ann\u00e9es, en raison de la demande croissante de syst\u00e8mes de serveurs pour r\u00e9pondre au nombre croissant d\u2019appareils IoT, l\u2019am\u00e9lioration de l\u2019efficacit\u00e9 de la conversion de puissance et la r\u00e9duction de la taille sont devenues d\u2019importants enjeux soci\u00e9taux qui n\u00e9cessitent de plus amples avanc\u00e9es dans le secteur des appareils d\u2019alimentation. 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