{"id":274062,"date":"2022-02-22T09:14:37","date_gmt":"2022-02-22T08:14:37","guid":{"rendered":"https:\/\/www.eenewseurope.com\/?p=274062"},"modified":"2022-02-22T09:14:37","modified_gmt":"2022-02-22T08:14:37","slug":"hemt-gan-bidirectionnel-40-v-en-boitier-miniature","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/hemt-gan-bidirectionnel-40-v-en-boitier-miniature\/","title":{"rendered":"HEMT GaN bidirectionnel 40 V en bo\u00eetier miniature"},"content":{"rendered":"<p>Innoscience Technology, entreprise fond\u00e9e pour cr\u00e9er un \u00e9cosyst\u00e8me \u00e9nerg\u00e9tique mondial bas\u00e9 sur des solutions de puissance au nitrure de gallium sur silicium (GaN-on-Si) \u00e0 la fois performantes et rentables, vient de pr\u00e9senter le INN40W08, un transistor \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) GaN-on-Si bidirectionnel 40\u00a0V, destin\u00e9 aux appareils mobiles, comme les ordinateurs et les t\u00e9l\u00e9phones portables. Le HEMT INN40W08 a \u00e9t\u00e9 d\u00e9velopp\u00e9 gr\u00e2ce \u00e0 InnoGaN, une technologie de pointe de l&rsquo;entreprise qui se caract\u00e9rise par une r\u00e9sistance \u00e0 l\u2019\u00e9tat passant R<sub>DS(on)<\/sub> ultra-faible.<\/p>\n<p>Dr Denis Marcon, Directeur G\u00e9n\u00e9ral d&rsquo;Innoscience Europe et Directeur Marketing pour les \u00c9tats-Unis et l&rsquo;Europe, d\u00e9clare\u00a0: \u00ab\u00a0La technologie GaN a \u00e9t\u00e9 adopt\u00e9e par les fabricants de chargeurs de t\u00e9l\u00e9phones ces deux derni\u00e8res ann\u00e9es pour pouvoir fournir une puissance accrue, tout en r\u00e9duisant la taille des dispositifs. Cependant, la perc\u00e9e significative r\u00e9alis\u00e9e par Innoscience permet d\u00e9sormais d&rsquo;introduire aussi des HEMT GaN dans les t\u00e9l\u00e9phones portables, pour en am\u00e9liorer l&rsquo;efficacit\u00e9 \u00e9nerg\u00e9tique et les performances. Gr\u00e2ce \u00e0 son \u00e9norme capacit\u00e9 disponible, Innoscience est en mesure de fournir la cha\u00eene d&rsquo;approvisionnement s\u00e9curis\u00e9e que les clients attendent aujourd&rsquo;hui.\u00a0\u00bb<\/p>\n<p>Dot\u00e9s d&rsquo;une capacit\u00e9 de blocage bidirectionnel, ces nouveaux HEMT GaN INN40W08 pr\u00e9sentent une r\u00e9sistance \u00e0 l&rsquo;\u00e9tat passant ultra-faible, de seulement 7,8\u00a0m\u03a9. Ce r\u00e9sultat est obtenu gr\u00e2ce \u00e0 la technologie \u00e0 couche de renforcement de contrainte brevet\u00e9e InnoGaN, qui r\u00e9duit la r\u00e9sistance surfacique de 66%. La charge de grille (QG) typique est de 12,7\u00a0nC. Le bo\u00eetier WLCSP (Wafer Level Chip Scale Package) \u00e0 grille 5\u00a0x\u00a05 ne mesure que 2\u00a0x\u00a02\u00a0mm. Cette minuscule empreinte permet d&rsquo;int\u00e9grer les HEMT GaN INN40W08 dans des t\u00e9l\u00e9phones portables. Les applications comprennent la commutation de charges \u00e9lev\u00e9es c\u00f4t\u00e9 haut, la protection contre les surtensions sur le port USB d&rsquo;un t\u00e9l\u00e9phone portable, et diff\u00e9rents types d\u2019alimentations notamment les chargeurs et adaptateurs. La technologie GaN d&rsquo;Innoscience permet de r\u00e9aliser des syst\u00e8mes de protection contre les surtensions (OVP) \u00e0 la fois efficaces et compacts, en rempla\u00e7ant deux MOSFET silicium par un seul transistor InnoGaN (ou BiGaN). Cela permet de r\u00e9duire le co\u00fbt global de la fonction OVP, et de miniaturiser celle-ci, ce qui s\u2019av\u00e8re tr\u00e8s int\u00e9ressant compte tenu des contraintes de place sur le circuit imprim\u00e9 d&rsquo;un t\u00e9l\u00e9phone portable.<\/p>\n<p>Innoscience est le plus grand fabricant de dispositifs int\u00e9gr\u00e9s (IDM) sp\u00e9cialis\u00e9 en technologie GaN au monde. L\u2019entreprise poss\u00e8de deux usines de production de wafers, dont le plus grand site au monde d\u00e9di\u00e9 au GaN-on-Si en 8\u00a0pouces. La soci\u00e9t\u00e9 dispose actuellement d\u2019une capacit\u00e9 de 10\u00a0000 wafers 8\u00a0pouces par mois, qui va passer \u00e0 14\u00a0000 wafers 8\u00a0pouces par mois dans le courant de l&rsquo;ann\u00e9e, puis \u00e0 70\u00a0000 wafers 8\u00a0pouces par mois d&rsquo;ici 2025. La soci\u00e9t\u00e9 propose un large catalogue de transistors GaN-on-Si e-mode, de 30 \u00e0 150\u00a0V et en 650\u00a0V. La technologie GaN d&rsquo;Innoscience garantit une conformit\u00e9 aux normes internationales les plus \u00e9lev\u00e9es, r\u00e9guli\u00e8rement confirm\u00e9e par des homologations avanc\u00e9es et des tests de fiabilit\u00e9.<\/p>\n<p><a href=\"http:\/\/www.innoscience.com\">www.innoscience.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Innoscience Technology, entreprise fond\u00e9e pour cr\u00e9er un \u00e9cosyst\u00e8me \u00e9nerg\u00e9tique mondial bas\u00e9 sur des solutions de puissance au nitrure de gallium sur silicium (GaN-on-Si) \u00e0 la fois performantes et rentables, vient de pr\u00e9senter le INN40W08, un transistor \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) GaN-on-Si bidirectionnel 40\u00a0V, destin\u00e9 aux appareils mobiles, comme les ordinateurs et les t\u00e9l\u00e9phones portables. [&hellip;]<\/p>\n","protected":false},"author":9,"featured_media":274063,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[1104,1103],"domains":[47],"ppma_author":[1141],"class_list":["post-274062","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","tag-gan-fr","tag-transistor","domains-electronique-eci"],"acf":[],"yoast_head":"<title>HEMT GaN bidirectionnel 40 V en bo\u00eetier miniature ...<\/title>\n<meta name=\"description\" content=\"Innoscience Technology, entreprise fond\u00e9e pour cr\u00e9er un \u00e9cosyst\u00e8me \u00e9nerg\u00e9tique mondial bas\u00e9 sur des solutions de puissance au nitrure de gallium sur...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/274062\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"HEMT GaN bidirectionnel 40 V en bo\u00eetier miniature\" \/>\n<meta property=\"og:description\" content=\"Innoscience Technology, entreprise fond\u00e9e pour cr\u00e9er un \u00e9cosyst\u00e8me \u00e9nerg\u00e9tique mondial bas\u00e9 sur des solutions de puissance au nitrure de gallium sur silicium (GaN-on-Si) \u00e0 la fois performantes et rentables, vient de pr\u00e9senter le INN40W08, un transistor \u00e0 haute mobilit\u00e9 \u00e9lectronique (HEMT) GaN-on-Si bidirectionnel 40\u00a0V, destin\u00e9 aux appareils mobiles, comme les ordinateurs et les t\u00e9l\u00e9phones portables. 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