{"id":234730,"date":"2015-11-03T23:00:00","date_gmt":"2015-11-03T23:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/la-fin-des-risques-de-connexion-inversee-aux-batteries\/"},"modified":"2015-11-03T23:00:00","modified_gmt":"2015-11-03T23:00:00","slug":"la-fin-des-risques-de-connexion-inversee-aux-batteries","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/la-fin-des-risques-de-connexion-inversee-aux-batteries\/","title":{"rendered":"La fin des risques de connexion invers\u00e9e aux batteries"},"content":{"rendered":"<p>Ce MOSFET agit comme une diode id&eacute;ale, autorisant le passage du courant lorsque la batterie est correctement connect&eacute;e et le bloquant lorsque la batterie est accidentellement connect&eacute;e dans le mauvais sens. Son fonctionnement ne n&eacute;cessite qu&rsquo;un nombre minimal de composants passifs. En comparaison, les MOSFET de type canal-N exigent une pompe de charge pour fournir la tension de grille, ajoutant de la complexit&eacute;, un surco&ucirc;t et augmentant le nombre de composants requis. De plus, en ne faisant pas appel &agrave; la topologie de commutation d&rsquo;une pompe de charge, de nombreux probl&egrave;mes li&eacute;s aux interf&eacute;rences &eacute;lectromagn&eacute;tiques (CEM) sont &eacute;vit&eacute;s.<br \/>\nCe circuit est totalement prot&eacute;g&eacute; contre l&rsquo;effet d&rsquo;avalanche car il a &eacute;t&eacute; soumis &agrave; 100% au test UIS (Unclamped-Inductive Switch). Ce test permet de s&rsquo;assurer que le MOSFET r&eacute;siste au pire cas de variation d&rsquo;&eacute;nergie. Selon la norme ISO7637, ce cas critique se produirait si la source d&rsquo;&eacute;nergie &eacute;tait d&eacute;branch&eacute;e lors de l&rsquo;alimentation d&rsquo;une charge inductive.<br \/>\nLa faible r&eacute;sistance R<sub>DS(on)<\/sub> de moins de 11 mOhms de ce composant veille &agrave; ce que la perte de puissance soit r&eacute;duite, d&rsquo;o&ugrave; un fonctionnement &agrave; plus basse temp&eacute;rature, avec pour cons&eacute;quences des consid&eacute;rations thermiques moins contraignantes et une fiabilit&eacute; nettement am&eacute;lior&eacute;e. La configuration en parall&egrave;le de plusieurs MOSFET favorise encore plus la r&eacute;duction des pertes d&rsquo;&eacute;nergie, d&rsquo;un facteur de n<sup>2<\/sup>.<br \/>\nLa version suffixe SPSQ est propos&eacute;e dans un bo&icirc;tier propri&eacute;taire PowerDI 5060, celles suffixes SK3Q et SSSQ respectivement en bo&icirc;tiers TO252 (DPAK) et SO-8. <\/p>\n<\/p>\n<p><a href=\"http:\/\/www.diodes.com\" target=\"_blank\" title=\"www.diodes.com\" rel=\"noopener\">www.diodes.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>Le MOSFET canal-P 40 V DMP4015SPSQ propos\u00e9 par DIODES est con\u00e7u pour prot\u00e9ger les unit\u00e9s de contr\u00f4le \u00e9lectroniques (ECU) des automobiles contre le risque d&rsquo;inversion de la connexion aux batteries. Ces unit\u00e9s sont utilis\u00e9es dans un nombre croissant d&rsquo;applications de contr\u00f4le automobile et, avec certains v\u00e9hicules d\u00e9ployant jusqu&rsquo;\u00e0 80 ECU, la n\u00e9cessit\u00e9 de prot\u00e9ger chacune d&rsquo;elles exige une solution simple et \u00e9conomique.<\/p>\n","protected":false},"author":22,"featured_media":234731,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-234730","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>La fin des risques de connexion invers\u00e9e aux batteries ...<\/title>\n<meta name=\"description\" content=\"Le MOSFET canal-P 40 V DMP4015SPSQ propos\u00e9 par DIODES est con\u00e7u pour prot\u00e9ger les unit\u00e9s de contr\u00f4le \u00e9lectroniques (ECU) des automobiles contre le...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/234730\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"La fin des risques de connexion invers\u00e9e aux batteries\" \/>\n<meta property=\"og:description\" content=\"Le MOSFET canal-P 40 V DMP4015SPSQ propos\u00e9 par DIODES est con\u00e7u pour prot\u00e9ger les unit\u00e9s de contr\u00f4le \u00e9lectroniques (ECU) des automobiles contre le risque d&#039;inversion de la connexion aux batteries. Ces unit\u00e9s sont utilis\u00e9es dans un nombre croissant d&#039;applications de contr\u00f4le automobile et, avec certains v\u00e9hicules d\u00e9ployant jusqu&#039;\u00e0 80 ECU, la n\u00e9cessit\u00e9 de prot\u00e9ger chacune d&#039;elles exige une solution simple et \u00e9conomique.\" \/>\n<meta property=\"og:url\" content=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/234730\/\" \/>\n<meta property=\"og:site_name\" content=\"EENewsEurope\" \/>\n<meta property=\"article:published_time\" content=\"2015-11-03T23:00:00+00:00\" \/>\n<meta property=\"og:image\" content=\"https:\/\/www.ecinews.fr\/wp-content\/uploads\/import\/default\/files\/import\/eci7474_diodes-inc_di0838_dmp4015spsq-nps_r.jpg\" \/>\n\t<meta property=\"og:image:width\" content=\"837\" \/>\n\t<meta property=\"og:image:height\" content=\"600\" \/>\n\t<meta property=\"og:image:type\" content=\"image\/jpeg\" \/>\n<meta name=\"author\" content=\"eeNews Europe\" \/>\n<meta name=\"twitter:card\" 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