{"id":234564,"date":"2015-10-19T22:00:00","date_gmt":"2015-10-19T22:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/mosfets-a-commutation-rapide-insensibles-a-la-temperature\/"},"modified":"2015-10-19T22:00:00","modified_gmt":"2015-10-19T22:00:00","slug":"mosfets-a-commutation-rapide-insensibles-a-la-temperature","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/mosfets-a-commutation-rapide-insensibles-a-la-temperature\/","title":{"rendered":"MOSFETs \u00e0 commutation rapide, insensibles \u00e0 la temp\u00e9rature"},"content":{"rendered":"<p>Log&eacute; dans le plus petit bo&icirc;tier de la s&eacute;rie, un DPAK (TO-252), le TK5P60W5 se caract&eacute;rise par un courant de drain ID de 4.5 A et une r&eacute;sistance &agrave; l&rsquo;&eacute;tat passant R<sub>DS(ON)<\/sub> de 0,99 Ohm. Il offre un temps de reprise inverse de diode &quot;trr&quot; typique de 65 ns. La capacit&eacute; d&rsquo;entr&eacute;e C<sub>iss<\/sub> de 370 pF et la charge de grille Q<sub>G<\/sub> de seulement 11.5 nC favorisent une commutation &agrave; haut rendement.<br \/>\nPr&eacute;sent&eacute; en bo&icirc;tier 3 broches TO-247 et caract&eacute;ris&eacute; par une R<sub>DS(ON)<\/sub> de 0,045 Ohm, le TK62N60W5 est le MOSFET le plus puissant de la s&eacute;rie. Il supporte un courant de sortie maximum ID de 61,8 A. Son &quot;trr&quot; typique de diode est de 170 ns, sa C<sub>iss<\/sub> de 6500 pF et sa Q<sub>G<\/sub> de 250 nC.<br \/>\nCes puces DTMOS IV-H sont produites en technologie Deep Trench propri&eacute;taire qui garantit une faible r&eacute;sistance &agrave; l&rsquo;&eacute;tat passant R<sub>DS(ON)<\/sub> aux temp&eacute;ratures &eacute;lev&eacute;es, par rapport aux MOSFET super-jonction conventionnels. Cette technologie offre &eacute;galement des pertes de commutation E<sub>OSS<\/sub> plus faibles que les technologies de g&eacute;n&eacute;ration pr&eacute;c&eacute;dente. La combinaison d&rsquo;une plus faible augmentation de R<sub>DS(ON)<\/sub> aux temp&eacute;ratures &eacute;lev&eacute;es et d&rsquo;un &quot;trr&quot; de diode inf&eacute;rieur se traduit par un rendement plus &eacute;lev&eacute;, tout en donnant aux concepteurs la possibilit&eacute; de minimiser les dimensions syst&egrave;me.<\/p>\n<p><a target=\"_blank\" href=\"http:\/\/www.toshiba.semicon-storage.com\/\" rel=\"noopener\">www.toshiba.semicon-storage.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"<p>La gamme de MOSFET DTMOS IV 600 V \u00e0 diode rapide HSD de Toshiba Electronics s\u2019\u00e9tend avec les deux mod\u00e8les TK5P60W5 et TK62N60W5 destin\u00e9s aux alimentations \u00e0 haut rendement et aux commandes moteur \u00ab\u00a0full bridge\u00a0\u00bb ou \u00ab\u00a0half-bridge\u00a0\u00bb. Le temps de reprise inverse de ces HSD est quasi-insensible \u00e0 la temp\u00e9rature, ce qui assure une commutation rapide sur une large plage de temp\u00e9rature.<\/p>\n","protected":false},"author":22,"featured_media":234565,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[881],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-234564","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","category-nouveaux-produits","domains-electronique-eci"],"acf":[],"yoast_head":"<title>MOSFETs \u00e0 commutation rapide, insensibles \u00e0 la temp\u00e9rature ...<\/title>\n<meta name=\"description\" content=\"La gamme de MOSFET DTMOS IV 600 V \u00e0 diode rapide HSD de Toshiba Electronics s\u2019\u00e9tend avec les deux mod\u00e8les TK5P60W5 et TK62N60W5 destin\u00e9s aux...\" \/>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/www.ecinews.fr\/fr\/wp-json\/wp\/v2\/posts\/234564\/\" \/>\n<meta property=\"og:locale\" content=\"fr_FR\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"MOSFETs \u00e0 commutation rapide, insensibles \u00e0 la temp\u00e9rature\" \/>\n<meta property=\"og:description\" content=\"La gamme de MOSFET DTMOS IV 600 V \u00e0 diode rapide HSD de Toshiba Electronics s\u2019\u00e9tend avec les deux mod\u00e8les TK5P60W5 et TK62N60W5 destin\u00e9s aux alimentations \u00e0 haut rendement et aux commandes moteur &quot;full bridge&quot; ou &quot;half-bridge&quot;. 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