{"id":234176,"date":"2015-09-10T22:00:00","date_gmt":"2015-09-10T22:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/des-transistors-de-puissance-en-gan-a-courant-fort-100-a\/"},"modified":"2015-09-10T22:00:00","modified_gmt":"2015-09-10T22:00:00","slug":"des-transistors-de-puissance-en-gan-a-courant-fort-100-a","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/des-transistors-de-puissance-en-gan-a-courant-fort-100-a\/","title":{"rendered":"Des transistors de puissance en GaN \u00e0 courant fort 100 A"},"content":{"rendered":"

Basés sur sa technologie brevetée Island Technology, ces dispositifs haute densité parviennent à une conversion de puissance extrêmement efficace, avec des vitesses de commutation élevées, supérieures à 100 V\/nS, et une dissipation thermique ultra-faible. Le transistor est conditionné dans une forme élaborée du GaNPX développé spécialement pour les courants de fonctionnement élevés, et qui fournit la faible inductance et la grande solidité mécanique pour le montage en surface requises dans les modules de puissance pour les marchés de l’industrie et de l’automobile. Ces composants en quasi-boîtier à puce ne présentent pas de fils soudés et offrent des améliorations radicales en termes de performances de commutation et de conduction par rapport aux MOSFET et IGBT traditionnels en silicium.
\nDes échantillons de ces composants sont en cour d’essai chez les principaux utilisateurs mondiaux, y compris des équipementiers et des fabricants de rang 1, et sont incorporés dans des applications solaires, industrielles et automobiles. <\/p>\n<\/p>\n

www.gansystems.com<\/a><\/p>\n","protected":false},"excerpt":{"rendered":"

Lors de la 17\u00e8me conf\u00e9rence sur l’\u00e9lectronique de puissance et ses applications Energy Conversion Congress and Expo Europe EPE15 organis\u00e9e par le CERN \u00e0 Gen\u00e8ve, GaN Systems a expos\u00e9 pour la premi\u00e8re fois ses transistors de puissance en nitrure de gallium (GaN) GS66540C \u00e0 courant fort 100 A, 650 V.<\/p>\n","protected":false},"author":22,"featured_media":234177,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-234176","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","domains-electronique-eci"],"acf":[],"yoast_head":"Des transistors de puissance en GaN \u00e0 courant fort 100 A ...<\/title>\n<meta name=\"description\" content=\"Lors de la 17\u00e8me conf\u00e9rence sur l'\u00e9lectronique de puissance et ses applications Energy Conversion 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