{"id":232736,"date":"2015-04-01T22:00:00","date_gmt":"2015-04-01T22:00:00","guid":{"rendered":"https:\/\/eenewseurope.artwhere.co\/samsung-electronics-dope-la-memoire-de-nos-telephones\/"},"modified":"2015-04-01T22:00:00","modified_gmt":"2015-04-01T22:00:00","slug":"samsung-electronics-dope-la-memoire-de-nos-telephones","status":"publish","type":"post","link":"https:\/\/www.ecinews.fr\/fr\/samsung-electronics-dope-la-memoire-de-nos-telephones\/","title":{"rendered":"Samsung Electronics dope la m\u00e9moire de nos t\u00e9l\u00e9phones"},"content":{"rendered":"

« Grâce à la commercialisation de notre gamme de valeur eMMC 5.0 basée sur NAND 3 bits, notre objectif est de jouer un rôle prépondérant dans la croissance du stockage mobile haute densité », a déclaré Jung-Bae Lee, directeur général de planification et d’application de produits mémoire chez Samsung Electronics. « Nous améliorons toujours plus nos mémoires mobiles intégrées de la prochaine génération en améliorant les performances et les densités, ceci afin de répondre à la demande croissante des clients sur le marché des appareils mobiles. »
\nAlors que les téléphones intelligents haut de gamme effectuent déjà une transition vers les mémoires de 128 Go basées sur les normes UFS (Universal Flash Storage) 2.0 ou eMMC 5.1, les téléphones intelligents de moyenne gamme pourront également augmenter leur capacité de stockage à 128 Go. La nouvelle mémoire eMMC 5.0 de 128 Go 3 bits de Samsung accélère cette transition vers la solution eMMC 5.0 offrant la densité la plus élevée du marché.<\/p>\n

La nouvelle mémoire eMMC 5.0 de 128 Go offre une lecture séquentielle des données de 260 Mo\/s, le même niveau de performances que la mémoire NAND eMMC 5.1 à cellule multi-niveau (MLC). Elle atteint respectivement des vitesses de lecture et d’écriture aléatoires de données de 6000 IOPS (opérations d’entrées-sorties par seconde) et de 5000 IOPS. Le traitement vidéo haute définition ainsi que les opérations multitâches avancées sont donc ici possibles. Ces vitesses d’IOPS sont respectivement quatre et dix fois plus rapides que celles d’une carte mémoire externe courante.\n<\/p>\n

\n

Grâce à la nouvelle gamme eMMC 5.0 3 bits, Samsung a étendu ses activités NAND 3 bits qui touchent aussi bien les SSD destinés aux centres de données, les serveurs et les PC que l’ensemble du marché du stockage sur mémoire mobile. Samsung continuera d’élargir ses applications de mémoire flash NAND 3 bits en mettant au point des solutions offrant de meilleures performances et une densité plus élevée, son objectif étant d’optimiser la compétitivité de son activité mémoire.<\/p>\n

www.samsung.com\/semiconductor<\/span><\/a><\/span><\/p>\n","protected":false},"excerpt":{"rendered":"

Samsung Electronics Co., Ltd., vient de pr\u00e9senter la nouvelle m\u00e9moire eMMC 5.0 NAND 3 bits de 128 Go destin\u00e9e aux march\u00e9s de masse des t\u00e9l\u00e9phones intelligents et des tablettes.<\/p>\n","protected":false},"author":22,"featured_media":232737,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"_acf_changed":false,"footnotes":""},"categories":[],"tags":[],"domains":[47],"ppma_author":[1149],"class_list":["post-232736","post","type-post","status-publish","format-standard","has-post-thumbnail","hentry","domains-electronique-eci"],"acf":[],"yoast_head":"Samsung Electronics dope la m\u00e9moire de nos t\u00e9l\u00e9phones ...<\/title>\n<meta name=\"description\" content=\"Samsung Electronics Co., Ltd., vient de pr\u00e9senter la nouvelle m\u00e9moire eMMC 5.0 NAND 3 bits de 128 Go destin\u00e9e aux march\u00e9s de masse des t\u00e9l\u00e9phones...\" \/>\n<meta name=\"robots\" content=\"index, follow, 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